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    TRANSISTOR BJT HIGH CURRENT Search Results

    TRANSISTOR BJT HIGH CURRENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BJT HIGH CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features


    Original     		PDF FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963

    9435R

    Abstract: NSB9435T1
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1

    transistor bd 370

    Abstract: No abstract text available
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D transistor bd 370

    9435R

    Abstract: NSB9435T1 NSB9435T1G power BJT PNP
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    transistor 1249

    Abstract: UPA800T 1788
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR


    Original     		PDF UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788

    PWM Controller For BJT

    Abstract: power transistor bjt 1000 a transistor marking CS
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		PDF AP3720 20kHz AP3720 PWM Controller For BJT power transistor bjt 1000 a transistor marking CS

    710 opto coupler

    Abstract: 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current AP3720 bjt high voltage
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		PDF AP3720 20kHz AP3720 710 opto coupler 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current bjt high voltage

    SMD Transistor dj rm

    Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
    Text: A Product Line of Diodes Incorporated DN95 2.8A high current LED driving using ZXLD1320 with external power switch Ray Liu, Applications engineer, Diodes Incorporated Introduction In the past decade, solid state lighting devices have gained popularity. High brightness LEDs are


    Original     		PDF ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    BJT with V-I characteristics

    Abstract: P-Channel Depletion Mosfets ECE60L IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode Field Effect Transistor
    Text: Field-Effect FET transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and, therefore, its current-carrying capability, is varied by the application of an electric field (thus,


    Original     		PDF ECE60L BJT with V-I characteristics P-Channel Depletion Mosfets IN60L depletion MOSFET compute voltage in kcl n channel depletion MOSFET P-Channel Depletion Mode FET P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode Field Effect Transistor

    TRANSISTORS BJT list

    Abstract: "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt
    Text: Understanding Basic Analog - Active Devices Application Report July 1999 Mixed Signal Products SLOA026 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF SLOA026 TRANSISTORS BJT list "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt

    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


    Original     		PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    disadvantages of microcontroller

    Abstract: power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack ADAU1761 BJT IC Vce bjt advantages and disadvantages
    Text: AN-1056 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Capless Headphone Virtual Ground Short-Circuit Protection for the ADAU1361 and ADAU1761 Low Power Codecs


    Original     		PDF AN-1056 ADAU1361 ADAU1761 AN08757-0-2/10 disadvantages of microcontroller power bjt advantages and disadvantages amplifier advantages and disadvantages disadvantages of mosfet Transistor BJT High Current mosfet stereo headphone amplifier circuit headphone jack BJT IC Vce bjt advantages and disadvantages

    DN4148

    Abstract: 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109
    Text: New Models Simulate RF Circuits Its no news to those who simulate that the accuracy of SPICE is directly related to the accuracy of the models. What may be news is that simulation of high frequency circuits well into the gigahertz range is now possible due to the introduction of some new RF


    Original     		PDF 36E-13 111E-09 80E-08 82E-01 758E-12 822E-12 12E-13 40E-14 1E-14 40E-01 DN4148 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578
    Text: Application Note 22 Issue 1 May 1996 High Frequency DC-DC Conversion using High Current Bipolar Transistors 400kHz Operation with Optimised Geometry Devices Neil Chadderton Dino Rosaldi Introduction DC-DC conversion is o n e o f t h e fundamental circuit functions within the


    Original     		PDF 400kHz ZTX618 ZTX717 ZTX718 ZTX849 TRANSISTOR REPLACEMENT GUIDE 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578

    Untitled

    Abstract: No abstract text available
    Text: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author


    Original     		PDF N00014-C-10-0104,

    MJE 2160 N

    Abstract: power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050
    Text: LESHAN RADIO COMPANY, LTD. Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter


    Original     		PDF MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050

    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541

    MJE 2160 N

    Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1
    Text: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter


    Original     		PDF MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPSL100 Preliminary LINEAR INTEGRATED CIRCUIT HIGH PRECISION CC PRIMARY-SIDE LED CONTROLLER 3  5 4 SOT-25 FEATURES * Primary-side sensing and regulation without TL431 and opto-coupler * High precision constant current regulation at universal AC input


    Original     		PDF UPSL100 OT-25 TL431 UPSL100 QW-R125-028

    Untitled

    Abstract: No abstract text available
    Text: HV8061 HV8063 Preliminary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage 8-Lead SO 14-Lead SO Die HV8061 1.0V to 1.6V HV8061 LG HV8061NG HV8061X HV8063 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description


    OCR Scan     		PDF HV8061 HV8063 14-Lead HV8061 HV8061NG HV8061X HV8063LG HV8063NG

    Transistor BJT High Current

    Abstract: transistor 1N4148 24v to HV8061 h bridge bjt LQH4N102K04M
    Text: ¡H C HV8061 HV8063 - Prelim inary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage HV8061 HV8063 8-Lead SO 14-Lead SO Die 1.0V to 1.6V HV8061LG HV8061NG HV8061X 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description


    OCR Scan     		PDF HV8061 HV8063 HV8063 HV8061LG HV8063LG 14-Lead HV8061NG HV8063NG HV8061X Transistor BJT High Current transistor 1N4148 24v to h bridge bjt LQH4N102K04M