TRANSISTOR BJT 100A Search Results

TRANSISTOR BJT 100A Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BJT 100A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
fairchild power bjt Abstract: pn junction diode structure BJT Gate Drive circuit transistor bjt Drive Base BJT AN-9065 NPN Power BJT 100v synchronous rectifier Text: www.fairchildsemi.com AN-9065 FRFET in Synchronous Rectification Introduction A synchronous rectifier becomes essential building block for greater efficiency and higher power density in switching power supplies. It is popular in applications from high-end	Original	AN-9065 fairchild power bjt pn junction diode structure BJT Gate Drive circuit transistor bjt Drive Base BJT AN-9065 NPN Power BJT 100v synchronous rectifier	PDF
mosfet base induction heat circuit Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map	Original		PDF
igbt spice model Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*	Original	D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR	PDF
full bridge mosfet smps Abstract: Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A Text: MOSFET Failure Modes in the Zero-Voltage-Switched Full-Bridge Switching Mode Power Supply Applications Alexander Fiel and Thomas Wu International Rectifier Applications Department El Segundo, CA 90245, USA Abstract-As the demand for the telecom/server power is	Original	zero-voltag23-32, full bridge mosfet smps Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A	PDF
IXZ421DF12N100 Abstract: No abstract text available Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance	Original	kV-10 -500V -1000V IXZ421DF12N100	PDF
qualcomm msm 8660 Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517 Text: 1 2 3 4 5 6 7 ! " 8 # 9 !	Original	RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517	PDF
Untitled Abstract: No abstract text available Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216	PDF
RFHA1006 Abstract: 0906-4K LQG11A47NJ00 Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1006 225MHz 1215MHz, RFHA1006 1215MHz DS120418 0906-4K LQG11A47NJ00	PDF
Untitled Abstract: No abstract text available Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1003 30MHz 512MHz, 512MHz DS120216	PDF
Untitled Abstract: No abstract text available Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1006 225MHz 1215MHz, 1215MHz DS120418	PDF
Untitled Abstract: No abstract text available Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology	Original	RFHA1000 50MHz 1000MHz, 1000MHz DS120418	PDF
Gan hemt transistor RFMD Abstract: DS111007 tl 4941 Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS111007 Gan hemt transistor RFMD DS111007 tl 4941	PDF
BJT with V-I characteristics Abstract: bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce Text: 2-Pack BJT 2 D I 100D-050 ‘ SSX ✓ n° 7 - POWER TRANSISTOR MODULE • # 5 : Features • 7 1} — 5fc-f K rti >$¥<4 • hF E ^iS *,' Including Free W heeling Diode High DC Current Gain Insulated Type ' Applications • "jJ- H i g H Power S witching	OCR Scan	1100D-050 E82988 -di/dt-100A/us BJT with V-I characteristics bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce	PDF
bjt 100a Abstract: 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210 Text: Ä ID- / I1 2 2-Pack BJT 1000 V 100 a 0 2^ - ' V 1 0W0 V0 W 1 I Outline Drawings POWER TRANSISTOR MODULE i Features • i6 IiJ ± High Voltage # 7 ' J —sfc'f U > 9 ¥ A =t — KF*9/8 • ASO tf'jAi' Including Free Wheeling Diode Excellent Safe Operating Area	OCR Scan	2D11002-100 E82988 Ic-100A, 00A/jws bjt 100a 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210	PDF

diode B14A Abstract: bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A Text: 2 Ä ID- / I1 1* v i0 / ^2 "- 1 2-Pack BJT 1200 V 100 a 1 ^2 01 / I Outline Drawings s < r7 — Y :7 > i * X 9 3E i > a . — k POWER TRANSISTOR MODULE Features • iS iM ± H igh V olta ge m y \) ij — K rt/R • ASO M S v ,' • In c lu d in g Free W h e e lin g D iode	OCR Scan	2D11002-120 E82988 diode B14A bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A	PDF
bjt 50a Abstract: M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols Text: FUJI 6-Pack BJT 600 V 50 A 6DI50C-050 [M L S m S O e l £ POWER TRANSISTOR MODULE f '• Outline Drawings LÖÖ^JM 4 18-5 I 18"5""i" 18-5 \|fiÖij 4-^5.a ! Features • K r tlt -y i — y f z j i) ' s f ? j • h F E ^ iS ^ ' In c lu d in g Free W h e e lin g D iode	OCR Scan	50C-050 E82988 bjt 50a M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols	PDF
transistor equivalent table Abstract: SD2300 Text: NEW ULTRA-HIGH DEN SITY TEX TU R ED POLY-Si FLOATING G A TE E 2PROM C E L L By D. Guterman, B. Houck, L. Starnes and B. Yeh This paper describes a new, highly scaled cell structure, the smallest full function E2PROM cell re ported to date. It utilizes the textured triple-poly-si	OCR Scan	BD230G01S/04 X130/1 transistor equivalent table SD2300	PDF
IGBT board FUJI Abstract: snubber resistance of IGBT thyristor 750vdc l series IGBT 150a 1200v IGBT FUJI module RBSOA circuit of six pack module igbt fuji igbt transistor modules 3rd Generation of 1200V IGBT Modules fuji igbt Text: The Design Advantages of a Current Limited Third Generation IGBT Module Jerry Gallagher, Collmer Semiconductor Inc., Dallas, Texas Third generation IGBT modules that include a non-latch-up circuit simplify circuit designs. The NLU limits short circuit currents to simplify	OCR Scan		PDF
MJ10200 Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102 Text: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.	OCR Scan	AR133 MTE200N05 MC14050B MC14528B C27852 MJ10200 MC13528 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102	PDF
ECUV1H080DCN Abstract: ECU-E1H330JCQ ECSH1CY105R Text: I RFI BMH! H _ P MICRO-DEVICES RF2128P • _ MEDIUM POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment E POWER AMPLIFIERS • Wireless LANs	OCR Scan	RF2128P RF2128P 22VDC 150WVDC ECU-V1H080DCN ECU-E1H330JCQ 100A2R4CP150X ECS-H1CY105R ECU-V1H331JCG ATC/1O0A2ROCP15OX ECUV1H080DCN ECSH1CY105R	PDF
ECU-V1H080DCN Abstract: ECU-V1H331JCG ecuv1h080dcn ECUV1H331JCG ECU-V1H080 Text: RF2128PI MICRO ’DEVICES MEDIUM POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment B POWER AMPLIFIERS • Wireless LANs Product Description	OCR Scan	RF2128PI RF2128P 45GHz 1900MHz 2200MHz, 100mW 150WVDC ECU-V1H080DCN ECU-E1H330JCO 100A2R4CP150X ECU-V1H331JCG ecuv1h080dcn ECUV1H331JCG ECU-V1H080	PDF
42019 AC Abstract: No abstract text available Text: RF RF2127 MICRO •DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical A pplications • DECT Cordless Applications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment IL s < cc Product Description LU The RF2127 is a medium power, high efficiency linear	OCR Scan	RF2127 RF2127 1800MHz 1900MHz, 100mW RF2125 1000pF, 50WVDC 330pF. 42019 AC	PDF
ECUV1H102KBN Abstract: ECU-V1H102KBN ECUV1H220JCN panasonic hf series capacitor panasonic ge capacitor panduit MPSS100 RF2125 RF2127 RF2127PCBA ECSH1CY105R Text: RFI RF2127 MICRO •DEVICES M ED IU M P O W ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a tio n s • D E C T Cordless Applications Com m ercial and Consum er System s • P C S Communication System s Portable Battery Powered Equipment P ro d u ct D e sc rip tio n	OCR Scan	RF2127 1800MHz 1900MHz, 100mW RF2125 50WVDC ECU-V1H220JCN PCC220CNTR-ND 10WVDC ECUV1H102KBN ECU-V1H102KBN ECUV1H220JCN panasonic hf series capacitor panasonic ge capacitor panduit MPSS100 RF2127PCBA ECSH1CY105R	PDF
H331 transistor Abstract: fj series capacitor panasonic 980630 ECU-V1H102KBN transistor h331 RF2125 RF2127 RF2127PCBA W0010 ECUV1H102KBN Text: RFEÜ RF2127 MICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • DECT Cordless Applications	OCR Scan	RF2127 RF2127 1800M 1900M ECU-V1H102KBN ECU-V1H331JCG ECU-V1H220JCN ECS-H1CY105R 100A160JP150X 100A6R2CP150X H331 transistor fj series capacitor panasonic 980630 transistor h331 RF2125 RF2127PCBA W0010 ECUV1H102KBN	PDF

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TRANSISTOR BJT 100A Search Results

TRANSISTOR BJT 100A Result Highlights (5)

TRANSISTOR BJT 100A Datasheets Context Search

fairchild power bjt

mosfet base induction heat circuit

igbt spice model

full bridge mosfet smps

IXZ421DF12N100

qualcomm msm 8660

Untitled

RFHA1006

Untitled

Untitled

Untitled

Gan hemt transistor RFMD

BJT with V-I characteristics

bjt 100a

diode B14A

bjt 50a

transistor equivalent table

IGBT board FUJI

MJ10200

ECUV1H080DCN

ECU-V1H080DCN

42019 AC

ECUV1H102KBN

H331 transistor