Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
1090MHz
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MS2267
Abstract: 50V 1215MHZ
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
50V 1215MHZ
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7121
Abstract: MS2267 50V 1215MHZ
Text: MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor
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MS2267
1215MHz
MS2267
1090MHz
7121
50V 1215MHZ
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MRF10031
Abstract: No abstract text available
Text: MRF10031 Microwave Power Silicon NPN Transistor 30W peak , 960–1215MHz, 36V M/A-COM Products Released - Rev. 05.30.07 Features • • • • • • • • Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ.
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MRF10031
1215MHz,
960-1215MHz,
36Vdc
MRF10031
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RFHA1006
Abstract: 0906-4K LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS120418
0906-4K
LQG11A47NJ00
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.
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ILD0912M400HV
ILD0912M400HV
960-1215MHz.
ILD0912M400HV-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES
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960-1215MHz
HVV0912-800
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Untitled
Abstract: No abstract text available
Text: RFHA1006 RFHA1006 9W GaN Wide-Band Power Amplifier 225MHz to 1215MHz The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density
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RFHA1006
225MHz
1215MHz
RFHA1006
DS131018
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Untitled
Abstract: No abstract text available
Text: Specification for an Highpass LC Filter MtronPTI P/N: LF9412 I. General & Electrical Requirements 1. Corner Frequency FON : 1215MHz 2. Passband: 1215MHz to 1400MHz 3. Passband Insertion Loss: ≤ 0.7dB 4. Passband VSWR: ≤ 1.4:1 5. Passband Phase Linearity: ≤ 9
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LF9412
1215MHz
1215MHz
1400MHz
960MHz
1100MHz
-16dBm
51dBm
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: F'&&&#' '+ /,&#'('+C>p"'&(+#''+&C>p"'& &#'&/&C>p 'aMWjj"+&L"+&E^cH<FWbb[j PALLET FORM FACTOR FEATURES 1 kWatt RF Pout (32 Watts Input Power) 48V operation VIMOSTM Technology High Gain, 15dB at 1 kWatt 1215MHz Compact design 2.6 x 4.6 Inches (64 x 117mm)
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1215MHz
117mm)
500Watts
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MS2267
Abstract: TACAN
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
1090MHz
TACAN
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Untitled
Abstract: No abstract text available
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
1215MHz
DS120418
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RFHA
Abstract: LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS121114
RFHA
LQG11A47NJ00
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING
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MS2267
1215MHz
MS2267
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AM80912-005
Abstract: capacitor feed-through SGS-THOMSON RF POWER
Text: AM80912-005 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN
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AM80912-005
AM80912-005
capacitor feed-through
SGS-THOMSON RF POWER
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M600
IB0912M600
IB0912M600-REV-NC-DS-REV-A
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AM0912-300
Abstract: 0912-300 so 960
Text: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN
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AM0912-300
AM0912-300
0912-300
so 960
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M150HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10µs,
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ILD0912M150HV
ILD0912M150HV
ILD0912M150HV-REV-NC-DS-REV-NC
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1090mhz
Abstract: JESD22-A114 PRA1000
Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit
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960-1215Mz
1025-1150MHz
1030-1090MHz
PRA1000
PRA1000
52-j1
1090mhz
JESD22-A114
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MAX1784
Abstract: PDL400 MAX4726 JESD22-C101A
Text: PDL400U/F PRELIMINARY DATASHEET 45 W, 960-1215 MHz, N-Channel E-M ode, Lateral MOSFET Introduction Table 1. Thermal Ch aracteris tic s The PDL400 is a high-voltage, gold metalized laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for applications
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PDL400U/F
PDL400
960MHz-1215MHz.
PDL400U
PDL400F
PDL400
MAX1784
MAX4726
JESD22-C101A
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AM80912-030
Abstract: No abstract text available
Text: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM80912-030
AM80912-030
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Untitled
Abstract: No abstract text available
Text: [ Z J SGS-THOMSON * 7 w. RiflD g[S |[Li TIS©liaB(gi A M 8 0 9 1 2 -0 1 5 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EM ITTER SITE BALLASTED . 0 0 :1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE
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AM80912-015
00bSD3fl
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM80912-030
AM80912-030
J133102E
00bS043
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