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    TRANSISTOR BIPOLAR COLLECTOR CURRENT 1MA Search Results

    TRANSISTOR BIPOLAR COLLECTOR CURRENT 1MA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BIPOLAR COLLECTOR CURRENT 1MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1714

    Abstract: T100
    Text: 2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 zApplications! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage.


    Original     		PDF 2SB1714 -370mV, -75mA) 2SB1714 T100

    100MHZ

    Abstract: BC817-16 BC817-25 BC817-40
    Text: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


    Original     		PDF BC817-16 BC817-25 BC817-40 OT-23 OT-23 MIL-STD-202E 100MHZ BC817-16 BC817-25 BC817-40

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		PDF MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    125OC

    Abstract: MMBT3904
    Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original     		PDF MMBT3904 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 125OC MMBT3904

    2SB1713

    Abstract: T100
    Text: 2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA)


    Original     		PDF 2SB1713 -250mV, -30mA) 2SB1713 T100

    2SA812

    Abstract: marking M4
    Text: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC


    Original     		PDF 2SA812 OT-23 -55OC 150OC OT-23 MIL-STD-202E 2SA812 marking M4

    100HZ

    Abstract: 10KW 2SA1235A
    Text: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC


    Original     		PDF 2SA1235A OT-23 -55OC 150OC OT-23 MIL-STD-202E 100HZ 10KW 2SA1235A

    Untitled

    Abstract: No abstract text available
    Text: FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range


    Original     		PDF FMMT491 OT-23 OT-23 MIL-STD-202E

    2SD2679

    Abstract: T100
    Text: 2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 zApplications! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) d 350mV at IC = 1.5A, IB = 75mA)


    Original     		PDF 2SD2679 350mV 2SD2679 T100

    2SD2679

    Abstract: T100
    Text: 2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 zApplications Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA)


    Original     		PDF 2SD2679 350mV 2SD2679 T100

    2SD2678

    Abstract: T100
    Text: 2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 zApplications Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA)


    Original     		PDF 2SD2678 250mV 2SD2678 T100

    Untitled

    Abstract: No abstract text available
    Text: FMMT4124 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF FMMT4124 OT-23 OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range


    Original     		PDF FMMT591 OT-23 -55OC 150OC OT-23 MIL-STD-202E 012different

    2SB1714

    Abstract: T100
    Text: 2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 zApplications Low frequency amplification, driver zDimensions Unit : mm MPT3 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ≤ -370mV, at IC = -1.5A, IB = -75mA)


    Original     		PDF 2SB1714 -370mV, -75mA) 2SB1714 T100

    2SC3052

    Abstract: No abstract text available
    Text: RECTRON 2SC3052 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range


    Original     		PDF 2SC3052 OT-23 OT-23 MIL-STD-202E 2SC3052

    100MHZ

    Abstract: FMMT591
    Text: RECTRON FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range


    Original     		PDF FMMT591 OT-23 -55OC 150OC OT-23 MIL-STD-202E 100MHZ FMMT591

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT3904LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range


    Original     		PDF MMBT3904LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    50MHZ

    Abstract: BC808
    Text: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF BC808 OT-23 150OC OT-23 MIL-STD-202E 012applications 50MHZ BC808

    100MHZ

    Abstract: FMMT491
    Text: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range


    Original     		PDF FMMT491 OT-23 OT-23 MIL-STD-202E 100MHZ FMMT491

    2SD596

    Abstract: No abstract text available
    Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF 2SD596 OT-23 OT-23 MIL-STD-202E 2SD596

    2SC2412

    Abstract: 100MHZ marking BS SOT-23
    Text: RECTRON 2SC2412 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : 0.15 A * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range


    Original     		PDF 2SC2412 OT-23 OT-23 MIL-STD-202E 2SC2412 100MHZ marking BS SOT-23

    2SA1037

    Abstract: No abstract text available
    Text: RECTRON 2SA1037 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : -0.15 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range


    Original     		PDF 2SA1037 OT-23 OT-23 MIL-STD-202E 2SA1037

    100MHZ

    Abstract: FMMT4124
    Text: RECTRON FMMT4124 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF FMMT4124 OT-23 OT-23 MIL-STD-202E 100MHZ FMMT4124

    100MHZ

    Abstract: BFS20
    Text: RECTRON BFS20 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF BFS20 OT-23 OT-23 MIL-STD-202E 100MHZ BFS20