TRANSISTOR BIPOLAR Search Results

TRANSISTOR BIPOLAR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
2SB1115(0)-T1-AY	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SA952-T-A	Renesas Electronics Corporation	Bipolar Power Transistors
2SD1000(0)-T1-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors

TRANSISTOR BIPOLAR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor	Original	PDF	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
transistor Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series	Original	PDF	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45, MP-45F MP-25 MP-80 transistor transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
advantage and disadvantage of igbt Abstract: HFBR1531Z HFBR-1522ETZ Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence	Original	PDF	AFBR-0546Z AFBR-0548Z HFBR-0543Z AV02-3407EN AFBR-1624Z/1629Z AFBR-2624Z/2529Z AV02-2699EN HFBR-0500ETZ IEC60664-1 AV02-3500EN advantage and disadvantage of igbt HFBR1531Z HFBR-1522ETZ
tip122 tip127 audio board Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents	Original	PDF	Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
transistor Abstract: transistor equivalent book free transistor equivalent book BIPOLAR TRANSISTOR transistors "Bipolar Transistors" operating TRANSISTOR 023 Transistor Data Book Bipolar Transistors Text: Philips Semiconductors Transistor Safe Operating Area SOAR Power Bipolar Transistors 1998 Dec 21 30 Philips Semiconductors Transistor Safe Operating Area (SOAR) Power Bipolar Transistors 1998 Dec 21 31 Philips Semiconductors Transistor Safe Operating Area (SOAR)	Original	PDF
UN1518 Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L ORDERING INFORMATION Order Number	Original	PDF	UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
UN1518 Abstract: UN1518-AE3-R UN1518L-AE3-R Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) Lead-free: UN1518L Halogen-free:UN1518G ORDERING INFORMATION Normal UN1518-AE3-R	Original	PDF	UN1518 UN1518L UN1518G UN1518-AE3-R UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	PDF	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR  FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R	Original	PDF	UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088
UN1518 Abstract: UN1518L-AE3-R UN1518G-AE3-R Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R	Original	PDF	UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518L-AE3-R UN1518G-AE3-R
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105

Untitled Abstract: No abstract text available Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
ca3083 Abstract: CA3096 MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays Text: CA3096 and CA3083 Transistor Array SPICE Models July 1997 MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.	Original	PDF	CA3096 CA3083 MM9710 CA3096, MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays
D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105
2SD2696 Abstract: EMX28 Text: EMX28 Transistors Low frequency transistor, complex 2-elements Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package.	Original	PDF	EMX28 2SD2696 300mA 100mA EMX28
Untitled Abstract: No abstract text available Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809
SGA8543Z-EVB2 Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UG25N45 Preliminary NPN SILICON TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION UTC UG25N45 is an N-channel NPN transistor. It can be used in strobe flash applications FEATURES * Very high input impedance	Original	PDF	UG25N45 UG25N45 UG25N45L UG25N45G UG25N45-TA3-T UG25N45L-TA3-T UG25N45G-TA3-T O-220 QW-R203-037
CA3046 bjt Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.	Original	PDF	CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E
Untitled Abstract: No abstract text available Text: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average	OCR Scan	PDF

TRANSISTOR BIPOLAR Search Results

TRANSISTOR BIPOLAR Result Highlights (6)

TRANSISTOR BIPOLAR Datasheets Context Search

transistor

MN1280

transistor

oz960

advantage and disadvantage of igbt

tip122 tip127 audio board

transistor

UN1518

UN1518

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Untitled

UN1518

369D

Untitled

369D

ca3083

D42DG

2SD2696

Untitled

SGA8543Z-EVB2

Untitled

CA3046 bjt

Untitled