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    TRANSISTOR BI 370 Search Results

    TRANSISTOR BI 370 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BI 370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4023 IC

    Abstract: world transistor equivalent and data
    Text: SHD418309 SHD418309A SHD418309B SENSITRON SEMICONDUCTOR PRELIMINARY DATA SHEET DATA SHEET 4023, REV.- NPN BI-POLAR POWER TRANSISTOR ƒ ƒ ƒ Hermetic, Ceramic Package Electrically equivalent to 2N3442 Surface Mount Package Absolute Maximum Ratings* Symbol


    Original     		PDF SHD418309 SHD418309A SHD418309B 2N3442 4023 IC world transistor equivalent and data

    Untitled

    Abstract: No abstract text available
    Text: SHD418302 SHD418302A SHD418302B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4024, REV.Formerly part number SHD4182/A/B NPN BI-POLAR DARLINGTON POWER TRANSISTOR • • • Hermetic, Ceramic Package Electrically equivalent to 2N6301 Surface Mount Package


    Original     		PDF SHD4182/A/B SHD418302 SHD418302A SHD418302B 2N6301

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD418301/A/B TECHNICAL DATA DATA SHEET 940, REV. - PNP BI-POLAR POWER TRANSISTOR • Hermetic Package • Electrically Equivalent to 2N3421 • Surface Mount Package Absolute Maximum Ratings* Symbol Parameter VCEO Collector-Emitter Voltage


    Original     		PDF SHD418301/A/B 2N3421

    TX033

    Abstract: westcode igbt
    Text: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


    Original     		PDF T1500TA25B TX033TA25B) T1500TA25B TX033 westcode igbt

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD418203/A/B TECHNICAL DATA DATA SHEET 941, REV. A Formerly part number SHD4183/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings*


    Original     		PDF SHD4183/A/B SHD418203/A/B 2N3741

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings*


    Original     		PDF SHD4184/A/B SHD418204/A/B 2N6193

    T0258HF65G

    Abstract: No abstract text available
    Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C


    Original     		PDF T0258HF65G T0258HF65G

    bi 370 transistor

    Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor

    transistor a 1941

    Abstract: 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator
    Text: HIGH ISOLATION VOLTAGE PS2801-1-Y/NL SOP OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1-Y/NL is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for high density


    Original     		PDF PS2801-1-Y/NL PS2801-1-Y/NL PS2801-1-F3 24-Hour transistor a 1941 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator

    transistor 2028

    Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353
    Text: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter


    OCR Scan     		PDF BFE540 OT353 MBG192 711002b OT353. 71iafi2h transistor 2028 bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353

    TRANSISTOR MARKING 3D 6PIN

    Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30
    Text: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFM540 OT363 OT363A OT363. 711005b TRANSISTOR MARKING 3D 6PIN bi 370 transistor BFM540 transistor 2028 transistor code t30

    m02 marking transistor

    Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin
    Text: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low


    OCR Scan     		PDF BFM505 OT363 OT363A 7110fl2b OT363. m02 marking transistor m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin

    MAX749CPA

    Abstract: No abstract text available
    Text: 19-0143: Rev 1:2/9 5 > i/ iy j x i> k i D i g i t a l l y A d j u s t a b l e LCD Bi as S u p p l y _G e n e r a l D e s c r i p t i o n ♦ +2.0V to +6.0V Input Voltage Range A unique current-lim ited control schem e reduces supply current and maximizes efficiency, while a high switching


    OCR Scan     		PDF AX749 MAX749CPA

    i580p

    Abstract: No abstract text available
    Text: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS


    OCR Scan     		PDF 2N3251A MIL-S-19500/323 MSC0281A i580p

    TIPL773

    Abstract: B 773 transistor TIPL773A
    Text: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature


    OCR Scan     		PDF TIPL773, TIPL773A, TIPL773B TIPL773 T-33-29 B 773 transistor TIPL773A

    2N914

    Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
    Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and


    OCR Scan     		PDF 2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030

    bi 370 transistor e

    Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7
    Text: 3 875081 6 E SOLI D STATE 01 DE | 3 ö 7 S 0 f l l DDITID? □ | D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


    OCR Scan     		PDF D45VH D44VH 3fl750fll bi 370 transistor e D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH7

    bi 370 transistor

    Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
    Text: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.


    OCR Scan     		PDF BFE520 OT353 OT353B MBG192 711D62L OT353. 711002b bi 370 transistor bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor

    1671B

    Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
    Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point


    OCR Scan     		PDF 2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C

    semiconductors bi 370

    Abstract: WD 969
    Text: philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7518-55 T0220AB semiconductors bi 370 WD 969

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage


    OCR Scan     		PDF ZDT6705 T6705 -100mA, 20MHz -10mA, 300ns. ZDT705 Tc17G57fl

    bi 370 transistor e

    Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
    Text: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED


    OCR Scan     		PDF

    0DG02

    Abstract: No abstract text available
    Text: 45E D ISOCO n C O M P O N E N T S LTD • HôôbSlO G0002S0 7 « I S O ~ V/-53 CNX 82AX .■ r» n ,|,i,.,„ j,j,- |.l lf. ,v v, r Æ tiliÆ .M», j- f e - 'f t m-Til1 H Heii'iid>' s'!'j a jl i òn i »/ ì ^ A r » ;ì in, I iv"-’- i k : ' ' y * } : * - Ì ■ »


    OCR Scan     		PDF G0002S0 0DG02

    24v ballast

    Abstract: marking 18T TR marking 18t RV3135B5X
    Text: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich


    OCR Scan     		PDF T-33-7 RV3135B5X 711005b 24v ballast marking 18T TR marking 18t RV3135B5X