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    TRANSISTOR BI 187 Search Results

    TRANSISTOR BI 187 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BI 187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5080/d 5072 transistor

    Abstract: No abstract text available
    Text: M60 Section 7 FREV1A1_11-2011 3/26/13 3:19 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals


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    PDF TL-11; 5080/d 5072 transistor

    transistor b 1238

    Abstract: No abstract text available
    Text: M60 Section 7 FREV2:11-2011 11/20/11 2:47 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals


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    PDF TL-11; transistor b 1238

    TRANSISTOR BI 187

    Abstract: No abstract text available
    Text: M55 Sect 6 correx pgsm 10/15/06 1:27 PM Page 100 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals


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    PDF TL-11; TRANSISTOR BI 187

    5a2 zener diode

    Abstract: ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422
    Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and


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    PDF 750CX, 750CXe, 750CX/CXe PPC750 5a2 zener diode ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422

    5c2 zener diode

    Abstract: zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode
    Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and


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    PDF 750CX, 750CXe, 750CX/CXe 750CXe_ PPC750 5c2 zener diode zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode

    TRANSISTOR BI 187

    Abstract: SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 SN74ACT7814
    Text: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A March 1996 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


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    PDF SCAA008A 64-Pin 56-Pin 80-Pin 24-Pin 28-Pin 32-Pin TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 SN74ACT7814

    HP8200

    Abstract: TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811
    Text: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


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    PDF SCAA008A HP8200 TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811

    marking 93A

    Abstract: TRANSISTOR BI 187
    Text: BFP 93A NPN Silicon RF Transistor 3  For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187

    VPS05178

    Abstract: on BE 187 TRANSISTOR
    Text: BFP 280 NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 on BE 187 TRANSISTOR

    VPS05178

    Abstract: No abstract text available
    Text: BFP 182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178

    bfp183

    Abstract: VPS05178
    Text: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BFP183 VPS05178 OT143 900MHz Aug-10-2001 bfp183 VPS05178

    BFP182

    Abstract: VPS05178
    Text: BFP182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BFP182 VPS05178 OT143 900MHz Aug-09-2001 BFP182 VPS05178

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


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    PDF BFP181R OT143R Jun-21-2001 BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BFP 181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R


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    PDF OT-143R Oct-12-1999

    transistor marking RHs

    Abstract: G1816
    Text: BFP 183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R


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    PDF OT-143R 900MHz Oct-12-1999 transistor marking RHs G1816

    VPS05178

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF VPS05178 OT-143 Oct-12-1999 VPS05178

    BFP182R

    Abstract: TRANSISTOR BI 187
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


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    PDF BFP182R OT143R 900MHz Aug-09-2001 BFP182R TRANSISTOR BI 187

    BFP183R

    Abstract: transistor marking RHs
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


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    PDF BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs

    VPS05178

    Abstract: No abstract text available
    Text: BFP 180 NPN Silicon RF Transistor 3  For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2  F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    Gan transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and


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    PDF

    TRANSISTOR BI 187

    Abstract: BUT230F BUT23 transistor bI 240
    Text: 3GE S C [ * [ œ S - T H O D • M S O & J IF i Q M 7T2T537 W © S s 00303ÔM 6 3 ■ s -T H O M S Q N ' " P ’W i S 3 U T 2 3 0 F B U T 2 3 0 V NPN TRANSISTOR POWER MODULE ■ HIGH C U RR ENT PO W ER BIPOLAR MODULE ■ VE R Y LOW Rth JUNCTION CASE ■ SPECIFIED


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    PDF 7T2T537 BUT230V BUT230F O-240) PC-029« TRANSISTOR BI 187 BUT230F BUT23 transistor bI 240

    transistor t2a 82

    Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
    Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:


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    PDF T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors

    2SB1516F

    Abstract: No abstract text available
    Text: 2SB1516F5 V ~ 7 > v 7s $ /Transistors a q q j v ' J ^ = \ > V ÿ > v 7 , $ " W w E p ita x ia l Planar PNP Silicon Transistor fê.M :â M t} W fà /\- Q v i Freq. Power Amp. W Rttj£ /Dimensions Unit : mm 1) VcE(sat) VcE(sat)^—0.3V 6.5 ±0.2 z-3rS ;t


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    PDF 2SB1516F5 2SB1516F