DA5 diode
Abstract: No abstract text available
Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
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IPB110N06L
IPP110N06L
DA5 diode
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Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06L
IPP070N06L
Diode Marking C.3
da5 diode
DA5 marking
5411C
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da5 diode
Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C
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IPP048N06L
IPB048N06L
da5 diode
BC519
DA QG
marking 1bc
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IPB085N06L
Abstract: da5 diode marking 4rt IPB085N06L G
Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J 0&* Y" 0( 6 P S ? @5A1C
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IPB085N06L
IPP085N06L
da5 diode
marking 4rt
IPB085N06L G
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DA QG
Abstract: No abstract text available
Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R , ? >=1G .&- Y" I9 0( 6 P S ? @5A1C 9>7 C 5=@5A1C
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IPB065N06L
IPP065N06L
DA QG
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BHNB1WHFV
Abstract: BH25NB1WHFV BH30NB1WHFV BH33NB1WHFV
Text: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line
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150mA
11020EBT04
R1120A
BHNB1WHFV
BH25NB1WHFV
BH30NB1WHFV
BH33NB1WHFV
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Untitled
Abstract: No abstract text available
Text: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line
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150mA
11020EBT04
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regulator BH
Abstract: BH15LB1WHFV BH28FB1WHFV BH30MA3WHFV hvsof6
Text: CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH □□ FB1WG series, BH□□ FB1WHFV series, BH □□ LB1WG series, BH□□ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH □□ MA3WHFV Series No.09020EBT02 Description
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300mA
09020EBT02
R0039A
regulator BH
BH15LB1WHFV
BH28FB1WHFV
BH30MA3WHFV
hvsof6
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Inverter Transformer Core Design and Material Selection
Abstract: TWC-S3 supermalloy bh curve TRANSISTOR bH-16 MAGNESIL - N TRANSISTOR bH-10 nickel bh curve orthonol permalloy bh curve magnesil core
Text: Division of Spang & Company Inverter Transformer Core Design and Material Selection INTRODUCTION . . 2 TYPICAL OPERATION . 2
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Untitled
Abstract: No abstract text available
Text: BH30MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02
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BH30MA3WHFV
300mA
10020ECT02
R1010A
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Untitled
Abstract: No abstract text available
Text: BH15MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02
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BH15MA3WHFV
300mA
10020ECT02
R1010A
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OH090U
Abstract: OHS3120U OH180U OH3013U OH360U OHN3000 OHN3019U OHN3100 OHS3000 OHS3100
Text: Hallogic Hall-effect Sensors OH090U, OH180U, OH360U OHN3000 Series, OHS3000 Series OHN3100 Series, OHS3100 Series Features: • Designed for non-contact switching operations • Operates over broad range of supply voltages 4.5 V to 24 V • Operates with excellent temperature stability in harsh
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OH090U,
OH180U,
OH360U
OHN3000
OHS3000
OHN3100
OHS3100
OHN3177
OHS3177
OH090U
OHS3120U
OH180U
OH3013U
OH360U
OHN3019U
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Untitled
Abstract: No abstract text available
Text: BH33MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02
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BH33MA3WHFV
300mA
10020ECT02
R1010A
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Untitled
Abstract: No abstract text available
Text: BH29MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02
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BH29MA3WHFV
300mA
10020ECT02
R1010A
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Untitled
Abstract: No abstract text available
Text: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power
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BLW31
BFQ43
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147 B transistor
Abstract: Transistor 2SB 148 2SB1386 2sb transistor
Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A
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2SB1386
OT-89
SC-62)
2SB1386;
2SB1386
147 B transistor
Transistor 2SB 148
2sb transistor
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PTH60G30BD150N
Abstract: PTH62H02AR180M265 PTH59F PTH61
Text: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage
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PTH9M/59F
PTH9M04D471TS2F333
PTH59F04D471TS
PTH9M04D222TS2F333
PTH59F04D222TS
TS-10
PTH59F
176-194F
PTH60G30BD150N
PTH62H02AR180M265
PTH59F
PTH61
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transistor j127
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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bbS3T31
BLF245B
OT279
OT279
transistor j127
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Untitled
Abstract: No abstract text available
Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A
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2SB1386
OT-89
SC-62)
2SB1386;
2SB1386
QG14737
2SB1412F5
2SB1412F5
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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IFBB
Abstract: No abstract text available
Text: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF547
OT262A2
0D30172
MRB022
IFBB
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2N3725
Abstract: A13724
Text: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 0DD3b51 S • ALGR T - q i- o l P R O C E S S BH B Process BHB NPN High-Speed Switching Transistor P ro c e ss B H B is a double-diffused epitaxial planar N PN silicon device designed to be used in high sp e e d , high-current sw itching applications.
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S0433Ã
0003b51
2N3725
A13724
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Untitled
Abstract: No abstract text available
Text: nyNPNT^^Pibyis-i-Bh^yyz? CON NPN EPITAXIAL PLANAR TRANSISTOR a ft x m m o VHF P o w e r A m p l i f i e r A p p l i c a t i o n s • P 0 = 1 0 W M i n . ( VCC = 2 0 V , P j = 1 . 0 f f , INDUSTRIAL APPLICATIONS Unit : mm f = 2 7 0MHz ) Recommended fo r H igh G a in C la s s C Pow er
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2-10G1A
270MHz.
2sc2176
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2N2646-47
Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘
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2N2646-47
30Volts
35Volts
10/xF
D5J44
2N2646
2N2646.47
scr firing circuits
dsj44
SCR 2N2646
VBII
SITN
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