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    TRANSISTOR BH PNP Search Results

    TRANSISTOR BH PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR BH PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


    Original     		PDF 2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386

    TRANSISTOR bH-16

    Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 MOUN50 TRANSISTOR bH-16 TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor

    SOT89 transistor marking 4A

    Abstract: marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE
    Text: CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics


    Original     		PDF C816M3-A BTB1427M3 OT-89 UL94V-0 SOT89 transistor marking 4A marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE

    marking codes BH sot-23 IN SEMICONDUCTOR

    Abstract: BCX71G marking codes transistors sot-23 transistor marking code 012 PNP Epitaxial Silicon Transistor sot-23 sot-23 marking code BCX71 BCX71H BCX71J BCX71K
    Text: BCX71 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and


    Original     		PDF BCX71 BCX71 OT-23 200Hz BCX71G BCX71H BCX71J BCX71K 20-February marking codes BH sot-23 IN SEMICONDUCTOR BCX71G marking codes transistors sot-23 transistor marking code 012 PNP Epitaxial Silicon Transistor sot-23 sot-23 marking code BCX71H BCX71J BCX71K

    BCX71J

    Abstract: BJ MARKING CODE BH Ra BCX71 BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking
    Text: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose


    Original     		PDF BCX71 OT-23 BCX71H BCX71J BCX71K 20-November BCX71G BCX71J BJ MARKING CODE BH Ra BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking

    2SA1117

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


    Original     		PDF 2SA1117 -200V 2SC2608 -50mA; -200V; 2SA1117

    c815

    Abstract: C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3
    Text: CYStech Electronics Corp. Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE sat , VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics


    Original     		PDF C815M3 BTB1386M3 -60mA BTD2098M3 OT-89 UL94V-0 c815 C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3

    Untitled

    Abstract: No abstract text available
    Text: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose


    Original     		PDF BCX71 OT-23 BCX71H BCX71J BCX71K 20-November BCX71G

    TRANSISTOR bH-16

    Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D TRANSISTOR bH-16 TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16

    high voltage npn transistor SOT-89

    Abstract: FHBCX53
    Text: ྯ૵਌ NPN Silicon AF Transistor FHBCX56 NPN Silicon AF Transistor ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1 For AF driver and output stages 2)High collector current 3)Low Collector-Emitter Saturation Voltage 4)Complement types:FHBCX53 PNP) SOT-89


    Original     		PDF FHBCX53 FHBCX56 OT-89 OT-89 FHBCX56 -10mA, 30VIE 150mA 500mA high voltage npn transistor SOT-89

    diode tfk

    Abstract: tfk 4 132 tfk 540 AM antenna coil bumper BA679 BC558 U4253BM U4253BM-AFP
    Text: U4253BM AM/FM - Antenna Impedance Matching IC * The U4253BM is an integrated AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof antennas. Gm bH Description


    Original     		PDF U4253BM U4253BM 11-Nov-96 D-74025 diode tfk tfk 4 132 tfk 540 AM antenna coil bumper BA679 BC558 U4253BM-AFP

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A


    OCR Scan     		PDF 2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 QG14737 2SB1412F5 2SB1412F5

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


    OCR Scan     		PDF BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715

    147 B transistor

    Abstract: Transistor 2SB 148 2SB1386 2sb transistor
    Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A


    OCR Scan     		PDF 2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 147 B transistor Transistor 2SB 148 2sb transistor

    transistor 224-1 base collector emitter

    Abstract: No abstract text available
    Text: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­


    OCR Scan     		PDF M54568L M54568L, M54568L transistor 224-1 base collector emitter

    MCN transistor

    Abstract: BSS44
    Text: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications


    OCR Scan     		PDF BSS44 BSS44 MCN transistor

    transistor c 2053

    Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
    Text: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2


    OCR Scan     		PDF 711Qflgb 2PB710; 2PB710A 2PD602 2PD602A -SC59 2PB710Q: 2PB710R: 2PB710S: 2PB710AQ: transistor c 2053 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ

    2PD601A

    Abstract: No abstract text available
    Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59


    OCR Scan     		PDF 711002b 2PB709; 2PB709A 2PD601 2PD601A -SC59 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ:

    transistor A62

    Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63
    Text: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62


    OCR Scan     		PDF MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 A62/63/64 transistor A62 MPSA63 MPS-A63 MPSA64 Transistor MPSA63

    Untitled

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and


    OCR Scan     		PDF BFQ254; BFQ254/I OT172A1 OT172A3 BFQ254 bbS3T31 MB3693 MEA335

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX


    OCR Scan     		PDF 2SA1399 2SA1399 2SC3581. 600mA 150MHztyp

    BCV62C

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks


    OCR Scan     		PDF BCV62 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 BCV62C

    bf679t

    Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
    Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages


    OCR Scan     		PDF 00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor

    5Ct transistor

    Abstract: transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC807W; BC808W FEATURES PINNING • High current max. 500 mA • Low voltage (max. 45 V). PIN 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector General purpose switching and amplification.


    OCR Scan     		PDF BC807W; BC808W OT323 BC817W BC818W. BC807W BC807-16W BC807-25W BC807-40W BC808W 5Ct transistor transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W