TRANSISTOR BFS 18 Search Results

TRANSISTOR BFS 18 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BFS 18 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFS17A Abstract: BFS17AR marking E2 Text: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain	Original	BFS17A BFS17AR D-74025 marking E2	PDF
6c2 transistor Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor	Original	OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS	PDF
BFS17 Abstract: transistor BFs 18 BFS17R marking E1 Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter	Original	BFS17 BFS17R D-74025 transistor BFs 18 marking E1	PDF
VSO05561 Abstract: No abstract text available Text: BFS 17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage	Original	VSO05561 OT-323 Oct-12-1999 VSO05561	PDF
VPS05604 Abstract: bfs 11 Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363	Original	VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11	PDF
BFS62 Abstract: Planar RF Transistor B4025 AC309 Text: BFS 62 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den VHF-Bereich Applications: General up to the VHF range Besondere Merkmale: Features: • Kleine R ückw irkungskapazität • Small feedback capacitance	OCR Scan	BFS62 BFS62 Planar RF Transistor B4025 AC309	PDF
k 319 Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55 Text: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar	OCR Scan	BFS55 BFS55 62702-F272 p21e--+ k 319 Q62702-F272 A 798 transistor transistor H 802	PDF
BFS480 Abstract: Q62702-F1531 GG24 Text: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package	Original	900MHz OT-363 Q62702-F1531 Dec-16-1996 BFS480 Q62702-F1531 GG24	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated	OCR Scan	900MHz Q62702-F1531 OT-363 BFS480 fl235b D1E5173	PDF
482 transistor Abstract: Q62702-F1573 GMA marking Text: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-363 Q62702-F1573 Dec-16-1996 482 transistor Q62702-F1573 GMA marking	PDF
Q62702-F1574 Abstract: GMA marking Text: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-363 Q62702-F1574 p15mA Dec-16-1996 Q62702-F1574 GMA marking	PDF
BFS480 Abstract: VPS05604 Text: BFS 480 NPN Silicon RF Transistor 4 For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1 Two (galvanic) internal isolated VPS05604	Original	VPS05604 EHA07196 OT-363 900MHz Oct-12-1999 BFS480 VPS05604	PDF
Q62702-F1572 Abstract: GMA marking Text: BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-363 Q62702-F1572 900MHz Dec-16-1996 Q62702-F1572 GMA marking	PDF
VPS05604 Abstract: No abstract text available Text: BFS 482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604	PDF

VPS05604 Abstract: No abstract text available Text: BFS 481 NPN Silicon RF Transistor 4 For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA f T = 8 GHz F = 1.4 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604	PDF
TRANSISTOR K 314 Abstract: antenne Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n	OCR Scan	Q62702-F272 TRANSISTOR K 314 antenne	PDF
TRANSISTOR 1443 Abstract: marking f2 sot363 f2 sot-363 marking VU SOT363 Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation ijy io? vu» 6 54 Matting en SOT-363 pockog* {fo r «am pi« W ti c o rm p o ró t to pin 1 of tHric« 12 3 Olrtcttow of Unrnllng	OCR Scan	OT-363 Q62702-F1645 OT-363 TRANSISTOR 1443 marking f2 sot363 f2 sot-363 marking VU SOT363	PDF
Untitled Abstract: No abstract text available Text: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.	OCR Scan	BFS17P 62702-F940 OT-23	PDF
bcw 918 Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115 Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221	OCR Scan	O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115	PDF
ir 319 Abstract: BFS55A ir319 Text: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.	OCR Scan	BFS55A Q62702-F454 ir 319 ir319	PDF
BFS480 Abstract: No abstract text available Text: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package	OCR Scan	900MHz OT-363 Q62702-F1531 BFS480	PDF
amplifier siemens sot-363 Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343 Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code	OCR Scan	OT-343 OT-143 fl235b05 amplifier siemens sot-363 BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343	PDF
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108	PDF
BF256A Abstract: BF256 Text: BF256A BF256A is a Preferred Device JFET - General Purpose N−Channel N−Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO−92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min	Original	BF256A BF256A BF256	PDF

TRANSISTOR BFS 18 Search Results

TRANSISTOR BFS 18 Result Highlights (5)

TRANSISTOR BFS 18 Datasheets Context Search

BFS17A

6c2 transistor

BFS17

VSO05561

VPS05604

BFS62

k 319

BFS480

Untitled

482 transistor

Q62702-F1574

BFS480

Q62702-F1572

VPS05604

VPS05604

TRANSISTOR K 314

TRANSISTOR 1443

Untitled

bcw 918

ir 319

BFS480

amplifier siemens sot-363

transistor BD 540

BF256A