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    BFS17S

    Abstract: VPS05604 NPN marking MCs
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 Aug-20-2001 BFS17S VPS05604 NPN marking MCs

    Untitled

    Abstract: No abstract text available
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363

    DIN 6784 c1

    Abstract: BCR108S BFS17S E6327 VPS05604
    Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 DIN 6784 c1 BCR108S BFS17S E6327 VPS05604

    VPS05604

    Abstract: bfs 11
    Text: BFS 17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11

    BFS483

    Abstract: G1410 VPS05604
    Text: BFS483 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2


    Original     		PDF BFS483 VPS05604 EHA07196 OT363 Jun-27-2001 BFS483 G1410 VPS05604

    Untitled

    Abstract: No abstract text available
    Text: BFS482 NPN Silicon RF Transistor 4  For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5


    Original     		PDF BFS482 VPS05604 EHA07196 OT363

    transistor marking RHs

    Abstract: marking rhs
    Text: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see


    Original     		PDF BFS483 EHA07196 OT363 transistor marking RHs marking rhs

    transistor marking RHs

    Abstract: BCR108S BFS483 bcr1 marking RHs
    Text: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see


    Original     		PDF BFS483 EHA07196 OT363 transistor marking RHs BCR108S BFS483 bcr1 marking RHs

    BCR108S

    Abstract: BFS481 E6327 VPS05604
    Text: BFS481 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA  f T = 8 GHz F = 1.4 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4


    Original     		PDF BFS481 VPS05604 EHA07196 OT363 BCR108S BFS481 E6327 VPS05604

    BFS481

    Abstract: infineon marking RFs BCR108S
    Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see


    Original     		PDF BFS481 EHA07196 OT363 BFS481 infineon marking RFs BCR108S

    Untitled

    Abstract: No abstract text available
    Text: BFS481 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package


    Original     		PDF BFS481 AEC-Q101 EHA07196

    BFS483

    Abstract: No abstract text available
    Text: BFS483 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2


    Original     		PDF BFS483 VPS05604 EHA07196 OT363 BFS483

    g1412

    Abstract: No abstract text available
    Text: BFS481 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA  f T = 8 GHz F = 1.4 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4


    Original     		PDF BFS481 VPS05604 EHA07196 OT363 g1412

    BCR108S

    Abstract: BFS481 D08060 marking K1 sot363
    Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package * Short term description


    Original     		PDF BFS481 EHA07196 OT363 BCR108S BFS481 D08060 marking K1 sot363

    transistor marking RHs

    Abstract: marking rhs BCR108S BFS483 transistor zs
    Text: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package * Short term description


    Original     		PDF BFS483 EHA07196 OT363 transistor marking RHs marking rhs BCR108S BFS483 transistor zs

    Marking code RHs

    Abstract: No abstract text available
    Text: BFS483 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2


    Original     		PDF BFS483 VPS05604 EHA07196 OT363 Marking code RHs

    BFS480

    Abstract: VPS05604
    Text: BFS 480 NPN Silicon RF Transistor 4  For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1  Two (galvanic) internal isolated VPS05604


    Original     		PDF VPS05604 EHA07196 OT-363 900MHz Oct-12-1999 BFS480 VPS05604

    VPS05604

    Abstract: No abstract text available
    Text: BFS 482 NPN Silicon RF Transistor 4  For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604

    VPS05604

    Abstract: No abstract text available
    Text: BFS 483 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604

    BFS481

    Abstract: VPS05604
    Text: BFS481 NPN Silicon RF Transistor 4  For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA  f T = 8 GHz F = 1.4 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4


    Original     		PDF BFS481 VPS05604 EHA07196 OT363 900MHz Jun-27-2001 BFS481 VPS05604

    BFS482

    Abstract: VPS05604
    Text: BFS482 NPN Silicon RF Transistor 4  For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5


    Original     		PDF BFS482 VPS05604 EHA07196 OT363 Jun-27-2001 BFS482 VPS05604

    BFS480

    Abstract: VPS05604
    Text: BFS480 NPN Silicon RF Transistor 4  For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  f T = 7 GHz 2 F = 1.5 dB at 900 MHz 1  Two (galvanic) internal isolated Transistors in one package


    Original     		PDF BFS480 VPS05604 EHA07196 OT363 900MHz Jun-27-2001 BFS480 VPS05604

    MARKING 1G TRANSISTOR

    Abstract: BCR108S BFS481
    Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see


    Original     		PDF BFS481 EHA07196 OT363 MARKING 1G TRANSISTOR BCR108S BFS481

    BFS480

    Abstract: No abstract text available
    Text: BFS480 NPN Silicon RF Transistor 4  For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  f T = 7 GHz 2 F = 1.5 dB at 900 MHz 1  Two (galvanic) internal isolated Transistors in one package


    Original     		PDF BFS480 VPS05604 EHA07196 OT363 BFS480