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    TRANSISTOR BFQ19 Search Results

    TRANSISTOR BFQ19 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFQ19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


    Original     		PDF BFQ19 BFQ19

    BFQ19S E6327

    Abstract: BAW78D BFQ19S E6327
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFQ19S VPS05162 BFQ19S E6327 BAW78D BFQ19S E6327

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 2 3 amplifiers in antenna and telecommunications systems up to 1.5 GHz 1 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFQ19S

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFQ19S VPS05162

    BFQ19

    Abstract: BFQ19C
    Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFQ19 771-BFQ19-T/R BFQ19 BFQ19C

    BFQ19S

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFQ19S VPS05162 Jun-22-2001 BFQ19S

    transistor bfq19

    Abstract: BFQ19 MBB773
    Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFQ19 transistor bfq19 BFQ19 MBB773

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 2 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFQ19S

    BAW78D

    Abstract: BFQ19S transistor MARKING CODE LAYOUT G SOT89
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFQ19S BAW78D BFQ19S transistor MARKING CODE LAYOUT G SOT89

    S*S Technologies

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFQ19S S*S Technologies

    BAW78D

    Abstract: BFQ19S
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFQ19S BAW78D BFQ19S

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFQ19S AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFQ19S AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFQ19S AEC-Q101

    BFQ195

    Abstract: MCD160 mcd165 MCD158 BFG197 MSB014 MCD156 DSA00888 3002 TRANSISTOR equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;


    Original     		PDF BFG197; BFG197/X; BFG197/XR BFG197 BFG197 OT143 BFQ195 MCD160 mcd165 MCD158 MSB014 MCD156 DSA00888 3002 TRANSISTOR equivalent

    Untitled

    Abstract: No abstract text available
    Text: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is


    OCR Scan     		PDF 0035DL BFQ19

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    BFQ19

    Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
    Text: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is


    OCR Scan     		PDF BFQ19 DA000 BFQ19 UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


    OCR Scan     		PDF bbS3T31 0Q322Dfl X3A-BFQ195 BFG195 OT103) BFG197 OT143) BFG198 OT223)

    X3A-BFQ195

    Abstract: BFG195 BFG197 BFG198
    Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


    OCR Scan     		PDF bbS3T31 00322DÃ X3A-BFQ195 BFG195 BFG197 OT143) BFG198 OT223) X3A-BFQ195 URV-3-5-52/733 BFG195 BFG197 BFG198

    IC 1296

    Abstract: K 193 transistor sot marking code ZS BFQ193
    Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m


    OCR Scan     		PDF BFQ193 Q62702-F1312 OT-89 IS21el2 IC 1296 K 193 transistor sot marking code ZS BFQ193

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFQ19S Q62702-F1088 OT-89 fl535b05 D1S2011 A235bD5

    BFG195

    Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
    Text: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197


    OCR Scan     		PDF BFG195 OT103) BFG197 OT143) BFG198 OT223) X3A-BFQ195 X3A-BFQ195 URV-3-5-52/733 BFG195 SOT103 BFQ195 BFG197 BFG198 320nm