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    TRANSISTOR BFP540 Search Results

    TRANSISTOR BFP540 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFP540 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		BFP540 OT343 Transistor BFP540 PDF

    marking AUs

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance


    Original     		BFP540ESD VPS05605 OT343 marking AUs PDF

    INFINEON ATS

    Abstract: BFP540 BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		BFP540 OT343 INFINEON ATS BFP540 BGA420 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		BFP540 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3 PDF

    bfp540

    Abstract: INFINEON ATS BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		BFP540 OT343 bfp540 INFINEON ATS BGA420 PDF

    BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540 PDF

    BFP540

    Abstract: INFINEON ATS BGA420 Transistor BFP540
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540 PDF

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		BFP540ESD OT343 10may BFP540ESD BGA420 PDF

    marking aus

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


    Original     		BFP540FESD marking aus BFP420F BFP540FESD amplifier marking code a PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 50Ohm Jul-22-2004 -j100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 PDF

    BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 BFP540 PDF

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		BFP540ESD OT343 BFP540ESD BGA420 PDF

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP540ESD BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		BFP540ESD OT343 RF NPN POWER TRANSISTOR C 10-12 GHZ BFP540ESD BGA420 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		BFP540ESD OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 2 4 1 • Pb-free RoHS compliant and halogen-free package with visible leads


    Original     		BFP540 AEC-Q101 OT343 PDF

    BFP540

    Abstract: 030232
    Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 50Ohm -j100 Aug-29-2003 BFP540 030232 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540FESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small


    Original     		BFP540FESD AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon Germanium RF Transistor 3 4  For highest gain low noise amplifier at 1.8 GHz  Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB  Gold metallization for high reliability 1  SIEGET  45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003 PDF

    BFP540

    Abstract: INFINEON application note
    Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note PDF

    SOT-173

    Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173
    Text: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure


    OCR Scan     		BFP540 QQ453Ã OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 SOT173 RF transistor NPN planar RF transistor wideband transistor sot173 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency


    OCR Scan     		bbS3T31 D0314T7 BFP540 OT173X) BFP540 OT173 OT173X RE120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Objective specification "T-13 /"* NPN 9 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L FEATURES SbE D • BFP540 7 1 1 D 6 5 b D0453flfci 4T2 II PHIN PINNING • High power gain


    OCR Scan     		OT173X) 8FP540 OT173 BFP540 D0453flfci PDF