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    TRANSISTOR BF 235 Search Results

    TRANSISTOR BF 235 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 235 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor BF 235

    Abstract: BF968 transistor bf 968
    Text: asE D • û 235 b a s a a c m s a a 1 ■ jg sieg ■ PNP Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BF 968 D - for input stages up to 900 M H z BF 968 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance


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    62702-F612 25iQ2 transistor BF 235 BF968 transistor bf 968 PDF

    CPH5705

    Abstract: transistor BF 235
    Text: CPH5705 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 512.6 f IS 390.0 BF 0.994 NF VAF 13.0 IKF 1.086 10.8 f ISE 2.499 NE 5.00 BR 1.00 NR 20.8 VAR 100.9 m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value


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    CPH5705 27deg CPH5705 transistor BF 235 PDF

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P PDF

    921TS

    Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
    Text: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power


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    15A3DIN 921TS transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    15C02MH

    Abstract: No abstract text available
    Text: 15C02MH SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 130.0f NF 1 IKF 230.0m NE 2 NR 1 235.0m IKR NC 2 IRB 30.00m RE 92.00m XTB 1.5 XTI 3 VJE 660.0m TF 300p VTF 5 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


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    15C02MH 15C02MH PDF

    Transistor BC 227

    Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235
    Text: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:


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    000531a 569-GS Transistor BC 227 transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235 PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 PDF

    Transistor BC 1078

    Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
    Text: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,


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    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


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    42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


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    12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE PDF

    transistor 663a

    Abstract: No abstract text available
    Text: ANALO G ► D E V IC E S Tri-Mode: +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ADM663A/ADM666A* FEATURES Tri-M ode Operation 3.3 V, 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 9 jiA max Quiescent Current High Current 100 mA Output


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    ADM663A/ADM666A* 663/A ADM666A 63A/AD transistor 663a PDF

    transistor JSW

    Abstract: diode JSW FL 576-K125
    Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM


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    6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125 PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    BFG425W

    Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
    Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power


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    BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    TTL 7457

    Abstract: BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice
    Text: Philips Semiconductors Preliminary specification NPN wideband cascode transistor BFC540 FEATURES PINNING • Small size PIN SYMBOL • High reverse isolation 1 t>2 base 2 • High linearity 2 ei emitter 1 • Low noise figure 3 bi base 1 • Gold metallization ensures excellent reliability.


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    BFC540 OT353 TTL 7457 BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF