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    TRANSISTOR BD 677 Search Results

    TRANSISTOR BD 677 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 677 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    BD676

    Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, BD676 BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682 PDF

    OF4455

    Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
    Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


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    Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P PDF

    BD681

    Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V


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    BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 BD681 bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD677A


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    BD675A/677A/679A/681 BD676A, BD678A, BD677A BD679A BD675A BD681 PDF

    BD682

    Abstract: BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A BD679A
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD 677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage


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    BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 BD682 BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A PDF

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d PDF

    BO677

    Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
    Text: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    023SbOS T-33-29 BD676, BD677 a23Sb0S ooo43Ra BD675 AKTIENGESELLSCHAF-BD679 BD67S, BO677 transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242 PDF

    D675A

    Abstract: d679a
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    BD675/D BD675, BD676, O-225AA D675A d679a PDF

    D675A

    Abstract: d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    BD675/D BD675, BD676, O-225AA D675A d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE PDF

    D679A

    Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc


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    BD675, BD676, 7677A BD679 BD681 D679A BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670 PDF

    BD876

    Abstract: transistor BD 680 BD878 BD660 BD876A LTA 703 S BD676
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Silicon PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc - 1.5 and 2.0 Adc • Monolithic Construction


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    BD676, BD675, BD676 BD676A BD678 BD678A BD876 transistor BD 680 BD878 BD660 BD876A LTA 703 S PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    transistor BD 680

    Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
    Text: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors


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    Type00 BD680 fi23SbOS transistor BD 680 transistor BD 677 bd678 TRANSISTOR Bd 137 PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    BD438 equivalent

    Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE


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    BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR PDF

    C6005

    Abstract: transistor C6005 bd 6775 9015 transistor specification C6005 transistor C 9015 transistor
    Text: Preliminary Specification RCL Semiconductors Ltd. C6005 4 DIGITS COUNT DOWN TIMER GENERAL DESCRIPTION C6005 is a four digits count-down tim er CMOS LSI circuit. It can directly drive 4 digits LCD with 1/4 duty cycle and 1/2 bias. It can count down from the set-in tim e to zero and alarm fo r 64 seconds w hen tim er


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    C6005 transistor C6005 bd 6775 9015 transistor specification C6005 transistor C 9015 transistor PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 PDF

    bd680

    Abstract: bd678 bd676 bd-678
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


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    BD676/D BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD676, BD675, bd680 bd678 bd676 bd-678 PDF

    Case 77-08

    Abstract: BD678 equivalent BD678 BD676 bd680 transistor BD676A BD682 transistor bd680 BD 139 transistor BD680
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


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    BD676/D BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 Case 77-08 BD678 equivalent bd680 transistor transistor bd680 BD 139 transistor PDF