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    TRANSISTOR BD 330 Search Results

    TRANSISTOR BD 330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    d2494

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M130 Preliminary TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB1214M130 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.210-1.400 GHz. While operating in


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    PDF IB1214M130 IB1214M130 IB1214M130-REV-PR1-DS-REV-B d2494

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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    LED lighting

    Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
    Text: Innovative PowerTM ACT364 DESIGN GUIDE Jun 2014 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs June 2014 Copyright 2014 Active-Semi International, Inc. - - www.active-semi.com www.active-semi.com


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    PDF ACT364 350mA 700mA ACT364e 01uF/50V 100pF/25V LED lighting transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET  High Power Gain  Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512


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    PDF IDM30512CW100 IDM30512CW100 30-512MHz 400MHz. 2x100mA IDM30512CW100-REV-NC-DS-REV-B

    603al

    Abstract: irfb3306 TMC603A schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE TMC603
    Text: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    PDF TMC603A 2010-May-14) TMC603A TMC603 603al irfb3306 schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE

    BZV55C12

    Abstract: No abstract text available
    Text: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    PDF TMC603A 2010-May-14) TMC603A TMC603 BZV55C12

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW


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    PDF IDM500CW300 IDM500CW300 2x100mA IDM500CW300-REV-NC-DS-REV-NC

    230V ac to 5V dc usb charger circuit

    Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5


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    PDF ACT36X, ACT33X 2012-Octâ ACT365-02 EPC17) 85-264Vac 2200mA 230V ac to 5V dc usb charger circuit D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer

    PTH8L14ar3r3m

    Abstract: PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    PDF CG01-J PTH8L14ar3r3m PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61

    transistor BD 522

    Abstract: PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    PDF CG01-H transistor BD 522 PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    bd207

    Abstract: bd 250c bd205
    Text: SC motorola €367254 CXSTRS/R M OT O RO L A DE | b 3 b 7 E 5 4 FÏ 96D S Ç Î X S T R S / R F 80567 MOTOROLA E 3 TECHNICAL DATA P L A S T IC HIGH PO W ER S ILIC O N NPN TR A N S IS TO R . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.


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    PDF BD205 BD207 bd207 bd 250c

    transistor lr 3303

    Abstract: D206 transistor TH 208 D-206
    Text: MOTOROLA SC {XSTRS/R 6367254 d F | b3t,725 4 DOflGStT 1 F> MO TOR OL A SC CXSTRS/R F 96D 80 569 D7OJ-V' MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high pow er audio amplifiers com plem entary or q uasi com plem entary circuits.


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    transistor BU 5027

    Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
    Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im


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    PDF KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    BD 149 transistor

    Abstract: BD207 BD 149 transistor data bd 149 transistor bd 139 BD 139 transistor BD205 BD205 motorola BD 207 til 139
    Text: MOTOROLA € 3 6 7 2 5 4 SC iXSTRS/R DE | b 3 b 7 E S 4 0 0 ÔDSL.7 Ô F> M O TO R O LA _SC X S T R S /R F MOTOROLA E 3 BD205 BD207 SEMICONDUCTOR TECHNICAL DATA PLA STIC H IG H POW ER S IL IC O N N P N TR A N S IS T O R . . . designed for use in high power audio amplifiers utilizing


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    PDF BD205 BD207 BD 149 transistor BD207 BD 149 transistor data bd 149 transistor bd 139 BD 139 transistor BD205 motorola BD 207 til 139

    transistor BD 512

    Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
    Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­


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    PDF 12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    BD512 mosfet

    Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
    Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe


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