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    TRANSISTOR BD 168 Search Results

    TRANSISTOR BD 168 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 168 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 PDF

    microwave oscillator

    Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
    Text: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS


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    3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854 PDF

    10 watt power transistor bd

    Abstract: BD 166, 168, 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60,80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD165 BD169 10 watt power transistor bd BD 166, 168, 170 PDF

    transistor bd170

    Abstract: BD170 BD168 itt ol 170
    Text: MOT OR OL A SC 6367254 -CXSTRS/R F> Tb b3t?aSM 96D 8 0 5 5 7 MOTOROLA .SC <XSTRS/R F L DDfl GSS? D BD166 BD168 BD170 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M EDIUM POWER SILICON PNP TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing


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    BD166 BD168 BD170 transistor bd170 BD170 itt ol 170 PDF

    BD165

    Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
    Text: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi


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    BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data PDF

    TRANSISTOR BD 168

    Abstract: 10 watt power transistor bd transistor bd170 transistor bd 126 Transistor 168 BD 166, 168, 170 transistor bd 170 BD 140 transistor transistor C016 AN-4151
    Text: M O T O R O L A SC Ì X S T R S / R F> "Tt BÈj|t3t7aS4 DDÖ0SS7 96D 8 0 5 5 7 6 3 6 7 2 5 4 M O T O R O L A .SC < X S T R S / R F L T~?-?7f BD166 BD168 BD170 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICON PNP TRANSISTOR 1.5 AMPERE


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    AN-4151 TRANSISTOR BD 168 10 watt power transistor bd transistor bd170 transistor bd 126 Transistor 168 BD 166, 168, 170 transistor bd 170 BD 140 transistor transistor C016 AN-4151 PDF

    transistor BU 5027

    Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
    Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im


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    KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    transistor BD 522

    Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
    Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


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    b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800 PDF

    K 3264 transistor

    Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
    Text: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q | XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.


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    b3b7254 AN-4151 K 3264 transistor BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor PDF

    Transistor D 799

    Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
    Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


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    BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design


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    LA400 50AL203140 DS86-352LBC PDF

    BD 104 NPN

    Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN
    Text: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval


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    LA400 50AL203140 DS86-352LBC BD 104 NPN pnp 8 transistor array npn 8 transistor array BD+104+NPN PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 PDF

    pnp 8 transistor array

    Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
    Text: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval


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    LA400 rev400 50AL203140 DS86-352LBC pnp 8 transistor array BD 104 NPN ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor PDF

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    E3B33c 000DQ5M lo-32 8 pin ic 3773 PDF

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


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    625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 PDF

    dell lcd 17 power supply diagram

    Abstract: DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors
    Text: IZ8057 MULTI MELODY GENERATOR WITH ACCOMPANEMENT DESCRIPTION The IZ8057 series is a CMOS LSI chip designed for use in advance clock products. It is designed to play the melodies according to previously programmed information. The IZ8057 is capable of generating songs


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    IZ8057 IZ8057 dell lcd 17 power supply diagram DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: M E d HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES ’ ’ FEATURES DESCRIPTION • PS2561 -1, -2 and -4 and PS2561L-1, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. P S 2 5 6 1 -1 ,-2 a n d -4 are in a


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    PS2561 PS2561L-1, S2561L-1, PS2561L-4 PS2561L1-1 PS2561L2-1 PDF

    Keithley s900

    Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
    Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.


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    RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 PDF

    C6005

    Abstract: transistor C6005 bd 6775 9015 transistor specification C6005 transistor C 9015 transistor
    Text: Preliminary Specification RCL Semiconductors Ltd. C6005 4 DIGITS COUNT DOWN TIMER GENERAL DESCRIPTION C6005 is a four digits count-down tim er CMOS LSI circuit. It can directly drive 4 digits LCD with 1/4 duty cycle and 1/2 bias. It can count down from the set-in tim e to zero and alarm fo r 64 seconds w hen tim er


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    C6005 transistor C6005 bd 6775 9015 transistor specification C6005 transistor C 9015 transistor PDF

    zt158

    Abstract: BD 149 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


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    IS22I MRF20030 zt158 BD 149 transistor PDF

    ARM7500FE

    Abstract: 08FF 0x032000F8
    Text: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15


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    ARM7500FE 0077B IOCK32 32MHz. 08FF 0x032000F8 PDF