transistor bd 292
Abstract: cdil bd 140 BD240C
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier
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O-220
25deg
C-120
transistor bd 292
cdil bd 140
BD240C
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transistor bd 292
Abstract: BD240C 20mH 1A power transistor bd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers
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O-220
25deg
C-120
transistor bd 292
BD240C
20mH 1A
power transistor bd
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Untitled
Abstract: No abstract text available
Text: Rev.4.0_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
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ic 8355
Abstract: 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2
Text: Rev.4.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
ic 8355
6 pin current control forward dc to dc converter
S-8355M50MC-MDJ-T2
pin diagram of 8355
S-8355M50MC
3.40 pf variable capacitor
S-8356Q50MC-OVJ-T2
power pwm switch
S-8357B32MC-NQR-T2
S-8357B50MA-NJJ-T2
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Untitled
Abstract: No abstract text available
Text: Rev.2.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
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transistor MJ 13003
Abstract: transistor bd 711 step-down sot-23-5 input DIL M50 coil pin diagram of 8355 shindengen MC mj 13003
Text: Rev.1.2-11 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
transistor MJ 13003
transistor bd 711
step-down sot-23-5 input
DIL M50 coil
pin diagram of 8355
shindengen MC
mj 13003
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transistor MJ 13003
Abstract: mj 13003
Text: Rev.1.2 ULTRA-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
UP003-A-C-SD-1
UP003-A-R-SD-1
BD006-A
BD006-A-P-SD-1
BD006-A-C-SD-2
transistor MJ 13003
mj 13003
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M800 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M800 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at
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IB1011M800
IB1011M800
IB1011M800-REV-NC-DS-REV-NC
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transistor BD 512
Abstract: IB1012S1100
Text: Part Number: Integra IB1012S1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S1100 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at
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IB1012S1100
IB1012S1100
IB1012S1100-REV-NC-DS-REV-A
transistor BD 512
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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IB1011L110
IB1011L110
IB1011L110-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1100 is designed for TCAS avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 32µs, 2%, at VCC = 60V, this
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IB1011M1100
IB1011M1100
IB1011M1100-REV-NC-DS-REV-NC
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TMOS power FET
Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This
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MMFT3055V/D
MMFT3055V
OT-223
MMFT3055V/D*
TMOS power FET
MMFT3055VT1
TMOS E-FET
MMFT3055V
MMFT3055VT3
transistor BD 135
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step-down sot-23-5 input
Abstract: No abstract text available
Text: Rev.4.2_01 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an
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S-8355/56/57/58
S-8355/57
S-8356/58
step-down sot-23-5 input
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Untitled
Abstract: No abstract text available
Text: Rev.5.0_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an
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S-8355/57
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ic 1105
Abstract: No abstract text available
Text: Rev.6.3_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an
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S-8355/56/57/58
S-8355/57
S-8356/58
ic 1105
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Untitled
Abstract: No abstract text available
Text: Rev.6.4_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an
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S-8355/57
S-8356/58
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transistor BD 110
Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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fl235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 110
0437
Q62902-B62
transistor BD 524
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transistor BD 800
Abstract: transistor BD 110
Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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A235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 800
transistor BD 110
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transistor D 2394
Abstract: f173 fp302
Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.
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FP302
FP302
2SC4520
SB05-05CP,
470//F
transistor D 2394
f173
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microwave oscillator
Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Text: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS
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3/w23
NE568
200mW
NE568
NE56855
NES6851
microwave oscillator
transistor code 458 055
2SC2339
1357 transistor NEC
2SC2342
transistor code 2sc2342
bd 743 transistor
NEC 1357
NE56854
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bd 142 transistor
Abstract: bd 109 transistor BD175 BD 139 transistor K1461 BD175.6 BD177 10 watt power transistor bd bd 731 BD179
Text: Tb M O T O R O L A SC -CXSTRS/R F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R DlF|b3b7aS4 96D F MOTOROLA 80559 B D 1 7 5 ,- 6 ,- 1 0 ,- 1 6 SEMICONDUCTOR B D 1 7 7 ,- 6 ,- 1 0 TECHNICAL DATA B D 1 7 9 ,- 6 ,- 1 0 PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3 AM PERE
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BD 266 S
Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing
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b3b725M
BD136
BD138
BD140
O-225AA
0GflM70t
BD 266 S
BD140 pnp transistor
BD 136
to225a
transistor bd 140 -16
transistor 136 138 140
BD136.6
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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transistor bd 370
Abstract: transistor BD 110
Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc
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MMJT9435/D
OT-223
MMJT9435
318E-04,
transistor bd 370
transistor BD 110
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