TRANSISTOR BD 108 Search Results

TRANSISTOR BD 108 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR BD 108 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	PDF	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
MM1027N Abstract: ccont mitsumi variable capacitor MM1027NF MM1027NV MM1027XD MM1027XF MM1027XV MM1081XV Text: System Reset with battery back-up MM1027, 1081 MITSUMI System Reset (with battery back-up) Monolithic IC MM1027, 1081 Outline These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	Original	PDF	MM1027, 00/div 5000/div MM1027N ccont mitsumi variable capacitor MM1027NF MM1027NV MM1027XD MM1027XF MM1027XV MM1081XV
MM1081XV Abstract: No abstract text available Text: System Reset with battery back-up MM1027, 1081 MITSUMI System Reset (with battery back-up) Monolithic IC MM1027, 1081 Outline These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	Original	PDF	MM1027, 00/div 5000/div MM1081XV
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	PDF	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-A
IB0810M100 Abstract: l-band 60 watt transistor x band radar U 855 D nc50 Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	PDF	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-NC l-band 60 watt transistor x band radar U 855 D nc50
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original	PDF
XOA transistor Abstract: No abstract text available Text: PRELIMINARY TECHNICAL DATA = Dual PCI Hot-PlugTM Controller Preliminary Technical Data PAUXONA ADM1014 3.3V Cmos Input 30 7 +3.3VAux AUXGA 31 AUXINA S Q FAULT LATCH 3.3V Cmos Output FAUXA G RESET 5 D OVERCURRENT AND UNDERVOLTAGE COMPARATORS FOR +3.3VAUX SET	Original	PDF	ADM1014 XOA transistor
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	PDF	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	PDF	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
AM503B Abstract: TRANSISTOR bd 108 PAK35-10A AN-4109 A503 HDD Actuator driver 4194a loop gain Text: www.fairchildsemi.com Application Note 4109 A guide to the design of current feedback control Introduction At first, we will explain the designing method of current feedback control of actuator in CD-media system with FAN8024D/BD, 4CH motor drive IC, which has two current feedback control channel. And then, we describe	Original	PDF	FAN8024D/BD, AM503B TRANSISTOR bd 108 PAK35-10A AN-4109 A503 HDD Actuator driver 4194a loop gain
Bode diagram Abstract: A503 AM503B pi equation for dc motor control kpc motor Text: www.fairchildsemi.com Application Note 4109 A guide to the design of current feedback control FAN8024BDIntroduction At first, we will explain the designing method of current feedback control of actuator in CD-media system with FAN8024D/BD, 4CH motor drive IC, which has two current feedback control channel. And then, we describe	Original	PDF	FAN8024BDIntroduction FAN8024D/BD, Bode diagram A503 AM503B pi equation for dc motor control kpc motor
microwave oscillator Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854 Text: NEC/ BD CALIFOR NIA OODOlET 3 \| 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS	OCR Scan	PDF	3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854
BD 130 Y transistor Abstract: No abstract text available Text: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.	OCR Scan	PDF	1000pF MM1027, MM1081 5000/div BD 130 Y transistor
BD 266 S Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6 Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 \| BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	PDF	b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6

8d136 Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133 Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6	OCR Scan	PDF	8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
transistor BD 141 Abstract: No abstract text available Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126	OCR Scan	PDF	BD136. BD138, BD140 6235bQS BD138. transistor BD 141
bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	PDF	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Lautsprecher LP Abstract: transistor gt 322 service-mitteilungen AC188K ac187k schiebe funkschau STRALSUND MP20A SF225 Text: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N lE fe r a d io -television \ AUSGABE: Seite April 1-6 Aus der Sowjet-Union wird noch in diesem Jahr der TTEmpfänger " SIGNAL 601 " importiert. Es handelt sich um ein Gerät für den Empfang der Berei	OCR Scan	PDF
tip 410 transistor Abstract: transistor TIP 662 P6020 P6019 transistor BD 253 BU105 texasinstruments bu 105 TRANSISTOR bd 108 BUY69 Text: BU105 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T .S C A N N IN G • • • V'c es Rating 1500 V Current Rating - 2 .5 Amps Peak Fast Switching — tp at 2 Amps 0.6 Microsecond Typical development types The data presented here ¡s o f a device under deve lopm ent, and m ay be subject to change w ith o u t notice . N o responsibi	OCR Scan	PDF
TRANSISTOR BC 137 Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded	OCR Scan	PDF	BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
transistor BD 325 Abstract: tip 410 transistor transistor bu 126 BU126 TIP 122 transistor TIP 212 BU105 TIP high power transistor for inverter 500V15 transistor TIP 662 Text: BU126 NPN SILICON POWER TRANSISTOR B U 126 IS A H IG H V O L T A G E NPN S IL IC O N POWER T R A N S IS TO R • Designed for General Industrial and Consumer Applications • Primarily Intended for Use in Switching Mode Power Supplies mechanical specification	OCR Scan	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
transistor TIP 350 Abstract: BD253 tip 410 transistor b0253 BD253B BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683 Text: BD253, BD253A, BD253B, BD253C NPN SILICON POWER TRANSISTORS Formerly XB33 Series High Voltage Rating — V c e x uP t0 900 Volts High Current Rating — 6 Amps Peak Low Saturation Voltage at 3 Amps — 0.6 Volts typ. Fast Switching tf at 3 Amps — 300 nano Secs typ.	OCR Scan	PDF	BD253, BD253A, BD253B, BD253C BD253 0253A BD253B 700vers transistor TIP 350 tip 410 transistor b0253 BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683

TRANSISTOR BD 108 Search Results

TRANSISTOR BD 108 Result Highlights (6)

TRANSISTOR BD 108 Datasheets Context Search

pin configuration transistor bd140

MM1027N

MM1081XV

Untitled

IB0810M100

IL311ANM

XOA transistor

ph 4148 zener diode

Keithley s900

AM503B

Bode diagram

microwave oscillator

BD 130 Y transistor

BD 266 S

8d136

transistor BD 141

bo 139

Lautsprecher LP

tip 410 transistor

TRANSISTOR BC 137

transistor BD 325

D 5038 Transistor Horizontal

2sb504

transistor TIP 350