TRANSISTOR BC33740 Search Results

TRANSISTOR BC33740 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BC33740 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC337 Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES	Original	M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage	Original	BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA,	PDF
BC337 Abstract: BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter	Original	BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337	PDF
BC337 Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J	Original	BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25	PDF
BC337 Abstract: BC337 hfe BC338 BC338 TRANSISTOR TRANSISTOR BC338 bc337 transistor BC337 NPN transistor BC337 NPN transistor datasheet transistor BC337-16 TRANSISTOR BC337-40 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter Collector-Base Voltage	Original	BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC337 hfe BC338 BC338 TRANSISTOR TRANSISTOR BC338 bc337 transistor BC337 NPN transistor BC337 NPN transistor datasheet transistor BC337-16 TRANSISTOR BC337-40	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8	Original	BC337 BC338, BC338 BC337 BC338 100mA 300mA	PDF
bc337 Abstract: NPN transistor 500ma TO-92 Transistor A12 BC337-16 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740 BC338 Text: BC337-16/25/40，BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features Epitaxial planar die construction B Surface device type mounting E Moisture sensitivity level 1 G Matte Tin Sn lead finish with Nickel(Ni) underplate	Original	BC337-16/25/40BC338-16/25/40 MIL-STD-202, 19gram C/10s BC337-16 Group16 BC337 BC338 NPN transistor 500ma TO-92 Transistor A12 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30	Original	BC337 BC338, BC338 BC337 BC338 100mA	PDF
bc337 Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor	PDF
BC337 Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16 Text: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range	Original	BC337/338 BC337 BC338, BC338 BC337 BC338 TRANSISTOR BC337-25 bc337 transistor datasheet BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337，-16，-25,-40 TRANSISTOR（NPN ） BC338，-16，-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage	Original	BC337ï BC338ï BC337 BC338 100MHz 270TYP 050TYP	PDF
BC33740BU Abstract: bc338 npn bc338 signal transistor bc337 fairchild BC338N Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC33840TA BC33740BU npn bc338 signal transistor bc337 fairchild BC338N	PDF
993 395 pnp npn Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10	Original	BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF

teo2537f Abstract: bc337 pin out diagram VREG12 c41 transistor switches BC337 2x30mH 4614 d83 thomson d92 02 EQUAL BYV10-20 Text: STV4614C SWITCH MODE POWER SUPPLY CONTROLLER . . . . . ADVANCE DATA FLYBACK CONVERTER POWER SUPPLY CURRENT MODE CONTROLLED SMPS LOW POWER CONSUMPTION PRIMARY AND SECONDARY REGULATION CONTROL OF CONDUCTION TIME AND OF SWITCHING FREQUENCY REVERSE CURRENT CONCEPT	Original	STV4614C STV4614C DIP14 DIP14 teo2537f bc337 pin out diagram VREG12 c41 transistor switches BC337 2x30mH 4614 d83 thomson d92 02 EQUAL BYV10-20	PDF
teo2537f Abstract: STV4614C SMPS Transformer Symbol transistor t1A 71 BC337 2x30mH 2SA1020Y stv4614 3 phase pwm ic DIP14 c41 transistor switches Text: STV4614C SWITCH MODE POWER SUPPLY CONTROLLER . . . . . ADVANCE DATA FLYBACK CONVERTER POWER SUPPLY CURRENT MODE CONTROLLED SMPS LOW POWER CONSUMPTION PRIMARY AND SECONDARY REGULATION CONTROL OF CONDUCTION TIME AND OF SWITCHING FREQUENCY REVERSE CURRENT CONCEPT	Original	STV4614C STV4614C PM-DIP14 teo2537f SMPS Transformer Symbol transistor t1A 71 BC337 2x30mH 2SA1020Y stv4614 3 phase pwm ic DIP14 c41 transistor switches	PDF
full bridge smps resonance snubber Abstract: EE25 transformer EE25 pc40 C2470 BC337 cs 1694 Cambridge capacitor capacitors three-winding transformer 1N4148 AN-2276 Text: Offline Power Supply Design with C2470 RDFC Controller Application Note AN-2280 • ABSTRACT This application note provides offline power supply design guidelines based on the RDFC topology and CamSemi controller IC family C2470. Key design equations and component selection information is	Original	C2470 AN-2280 C2470. AN-2280-0904 07-Apr-2009 full bridge smps resonance snubber EE25 transformer EE25 pc40 BC337 cs 1694 Cambridge capacitor capacitors three-winding transformer 1N4148 AN-2276	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
NPN Transistor BC548B Abstract: BC548 BC238B npn bc337-40 npn transistor Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0\| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB	OCR Scan	T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor	PDF
NPN Transistor BC548B Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48 Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA	OCR Scan	BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48	PDF
TRANSISTOR BC 448 smd Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors	OCR Scan	BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A	PDF
bc337 Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840 Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C	OCR Scan	BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840	PDF

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TRANSISTOR BC33740 Search Results

TRANSISTOR BC33740 Result Highlights (5)

TRANSISTOR BC33740 Datasheets Context Search

BC337

Untitled

BC337

BC337

BC337

Untitled

bc337

Untitled

bc337

BC337

Untitled

BC33740BU

993 395 pnp npn

Q2N4401

teo2537f

teo2537f

full bridge smps resonance snubber

BC548 TRANSISTOR REPLACEMENT

y51 h 120c

sx3704

NPN Transistor BC548B

NPN Transistor BC548B

TRANSISTOR BC 448 smd

bc337