TRANSISTOR BC237C Search Results

TRANSISTOR BC237C Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BC237C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC237 Abstract: 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	BC237/238/239 BC237 BC238/239 -55-1V 100MHz 100mA BC237B/238B BC237 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337	PDF
transistor 238B Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1	Original	BC237/238/239 BC237 BC238/239 100mA 100mA 100MHz BC238 BC239 transistor 238B	PDF
238b Abstract: BC238 transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237 Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g	Original	BC237. BC237 BC238 BC239C 200Hz BC239 BC238 238b transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237	PDF
TRANSISTOR 237b Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237 Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter	Original	BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237	PDF
TRANSISTOR 237b Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter	Original	BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b	PDF
Transistor BC239c Abstract: BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A BC238 Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g	Original	BC237. BC237 BC238 BC239C 200Hz BC239 BC238 Transistor BC239c BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A	PDF
BC237 Abstract: BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	BC237/238/239 BC237 BC238/239 100MHz 100mA BC237B/238B BC237 BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239	PDF
BC237B Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B Text: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range	Original	BC237/238/239 BC237 BC238/239 100mA 100mA BC237B transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B	PDF
bc238 Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range	Original	BC237/238/239 BC237 BC238/239 BC238/itter 100mA 100mA 100MHz BC238 bc238	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
K 2645 transistor Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645	PDF
ALG TRANSISTOR Abstract: transistor PNP ALG transistor BC 368 Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage	OCR Scan	15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368	PDF
TRANSISTOR BC 208 Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B Text: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W	OCR Scan	IAL66 15A3DIN TRANSISTOR BC 208 transistor Bu 208 BU208A TRANSISTOR BC 208 B	PDF

TRANSISTOR BC 157 Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34 Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34	PDF
C 2577 transistor Abstract: TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor Text: TELEFUNKEN ELECTRONIC 17E » • fl^ OCnb QOGTMB^ 0 1 BF 885 S miHNIMCSlIM electronic Crtttn* T«cbnotoö*s Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages In TV receivers Features: • High reverse voltage • No frFE-drift dependent of temperature	OCR Scan	T0126 15A3DIN C 2577 transistor TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor	PDF
diode B14A Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070 Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)	OCR Scan	00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070	PDF
c 2579 power transistor Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage	OCR Scan	JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ	PDF
41 BF transistor Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44 Text: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage	OCR Scan	r-33-Ã BF869SABF871 T0126 15A3DIN 41 BF transistor transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44	PDF
DIN125A Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472 Text: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:	OCR Scan	T-33-17 DIN41869 DIN125A BF472S T0126 15A3DIN transistor bc 470 BF470S din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472	PDF
aot 1106 Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400 Text: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique	OCR Scan	15A3DIN aot 1106 transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400	PDF
transistor BF 164 Abstract: buv 47 i L61A Text: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog« T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:	OCR Scan	15A3DIN transistor BF 164 buv 47 i L61A	PDF
TRANSISTOR BI 187 Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126 Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage	OCR Scan	BUV71 T0126 15A3DIN TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126	PDF
transistor K 1413 Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110 Text: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S	OCR Scan	BF470S DIN41 BF469S T0126 15A3DIN transistor K 1413 D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110	PDF

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TRANSISTOR BC237C Search Results

TRANSISTOR BC237C Result Highlights (5)

TRANSISTOR BC237C Datasheets Context Search

BC237

transistor 238B

238b

TRANSISTOR 237b

TRANSISTOR 237b

Transistor BC239c

BC237

BC237B

bc238

y51 h 120c

sx3704

K 2645 transistor

ALG TRANSISTOR

TRANSISTOR BC 208

TRANSISTOR BC 157

C 2577 transistor

diode B14A

c 2579 power transistor

41 BF transistor

DIN125A

aot 1106

transistor BF 164

TRANSISTOR BI 187

transistor K 1413