TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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TRANSISTOR BC 413
Abstract: 212B BC212B ic 4700 Transistor BC212B
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212B SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 2 3 C B E
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BC212B
200uA,
200Hz
Pr6897
TRANSISTOR BC 413
212B
BC212B
ic 4700
Transistor BC212B
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BC212L
Abstract: No abstract text available
Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol
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BC212L
100mA,
100MHz
200Hz
BC212L
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BC212L
Abstract: No abstract text available
Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol
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BC212L
100mA,
100MHz
200Hz
BC212L
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BC212L
Abstract: No abstract text available
Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol
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BC212L
100mA,
100MHz
200Hz
BC212L
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BC212L
Abstract: No abstract text available
Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol
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BC212L
100mA,
100MHz
200Hz
BC212L
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BC212
Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145
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BC212
200uA,
200Hz
Pr6897
BC212
TRANSISTOR BC 413
Transistor BC212
TRANSISTOR BC 212
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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BC212
BC212B
BC212C
-100mA
-10mA
100MHz
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equivalent of transistor bc212
Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
Text: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage
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BC212
equivalent of transistor bc212
BC212 data
BC212
Transistor BC212
bc212* transistor
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bc212b
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR(PNP ) FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W (Tamb=25℃) 1. EMITTER
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BC212,
-10mA
100MHz
270TYP
050TYP
bc212b
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Transistor BC212B
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE
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BC212,
BC212
BC212B
BC212C
-10mA
100MHz
Transistor BC212B
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range
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BC212,
BC212
BC212B
BC212C
-10mA
100MHz
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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NPN Transistor BC548B
Abstract: BC548 BC238B npn bc337-40 npn transistor
Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB
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T092J
BC167A
BC167B
BC168A
BC168B
BC168C
BC169B
BC169C
BC182LA
BC182LB
NPN Transistor BC548B
BC548
BC238B npn
bc337-40 npn transistor
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Untitled
Abstract: No abstract text available
Text: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo
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BC212
-10uA
-100m
-10mA
100mA
-100mA
300uS
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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SL 100 NPN Transistor
Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE
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THC-2484
THC-4123
THC-4124
THC-4125
THC-4126
THC-40D4
THC-40D5
THC-41D4
THC-41D5
SL 100 NPN Transistor
bc337-40 npn transistor
transistor TE 901
Transistor BC239c
SL 100 power transistor
of transistor sl 100
Transistor BC413C
TRANSISTOR SL 100
te 901 pnp Transistor
sl 100 transistor
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BC307A
Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Text: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C
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BC556A
BC556B
BCY77A
BCY77B
BCY77C
BC212A
BC212B
BC307A
BC307B
BC558B
BC308B
BC557A
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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BC212C
Abstract: Transistor BC212 BC212
Text: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e
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BC212
150TC
BC212B
BC212C
100MHz
Transistor BC212
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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