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    TRANSISTOR BC 135 Search Results

    TRANSISTOR BC 135 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 135 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor bc 517

    Abstract: BC517 transistor bc 100 Q62702-C825 TRANSISTOR BC c825 BC 517 TRANSISTOR BC 135
    Text: BC 517 NPN Silicon Darlington Transistor BC 517 High current gain ● High collector current ● Complementary type: BC 516 PNP ● 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 – Q62702-C825 C TO-92 B E Maximum Ratings Parameter


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    Q62702-C825 transistor bc 517 BC517 transistor bc 100 Q62702-C825 TRANSISTOR BC c825 BC 517 TRANSISTOR BC 135 PDF

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    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon Darlington Transistor BC 516 • High current gain • High collector current • Complementary type: BC 517 NPN Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1) E TO-92 Maximum Ratings Parameter


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    Q62702-C944 BE35bD5 Q12D553 Q1E05E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter


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    Q62702-C825 111Jlllll! fl235b05 053SbOS D1SQ52Ã PDF

    transistor bc 318

    Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
    Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol


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    Q62702-C944 transistor bc 318 TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517 PDF

    bc516

    Abstract: C944 Q62702-C944 TRANSISTOR BC BC 517 TRANSISTOR BC 135 517 bc
    Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol


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    Q62702-C944 bc516 C944 Q62702-C944 TRANSISTOR BC BC 517 TRANSISTOR BC 135 517 bc PDF

    CD9013

    Abstract: E C B BC 635 TRANSISTOR
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package E BC General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC Unless Otherwise Specified VALUE


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    ISO/TS16949 CD9013 C-120 CD9013Rev 1170603D CD9013 E C B BC 635 TRANSISTOR PDF

    2SC1815

    Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
    Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL


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    2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR PDF

    BC376

    Abstract: No abstract text available
    Text: BC376 PHILIPS INTERNATIONAL 5bE D 7110ö2hi ODMSÜIE TIT BIPHIN r-2.^-23 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic T O -92, intended for low-voltage, high-current LF applications. BC 375/B C 376 is the matched complementary pair suitable fo r output stages up to 2 W.


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    BC376 711005b BC375/BC376 150mA BC376 PDF

    CD9013

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package E BC General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC Unless Otherwise Specified


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    CD9013 C-120 CD9013Rev 2280605D CD9013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package E BC General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC Unless Otherwise Specified


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    CD9013 C-120 CD9013Rev 2280605D PDF

    BC376

    Abstract: U0275
    Text: N AMER PHI LIP S/DISCRET E b^E D bbS3^31 Ü0275SE lbS I !APX BC376 SILICON PLANAR EPITAXIAL TRANSISTOR PNP tran sisto r in a p lastic TO -92, intended fo r low-voltage, h ig h-current LF applications. B C 375/BC 376 is th e m atched com p le m e n tary p a ir suitable fo r o u tp u t stages up to 2 W.


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    bbS3T31 0275SE BC376 BC375/BC376 150mA BC376 U0275 PDF

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 PDF

    BSS125

    Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
    Text: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


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    23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    l6599

    Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w transistor bc 567 arcotronics 1uf 450V MKP transistor bc 564
    Text: AN2393 Application note Reference design: wide range 200W L6599-based HB LLC resonant converter for LCD TV & flat panels Introduction This note describes the performances of a 200 W reference board, with wide-range mains operation and power-factor-correction PFC . Its electrical specification is tailored to a


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    AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w transistor bc 567 arcotronics 1uf 450V MKP transistor bc 564 PDF

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 PDF

    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


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    DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 PDF

    ABB inverter motor fault code

    Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
    Text: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a


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    1352C-PIUS 1352C-6 P/N146071 ABB inverter motor fault code Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits PDF