neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page
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10kHz
13kHz
2x10kHz-19kHz
3x13kHz-38kHz
57kHz
V66047-S695-G100-G1
fl235b05
D137bbfl
neosid v6
OV56
AM2 Siemens
neosid v7
V55D
neosid CAP
neosid 3.3
NEOSID
nr. 9181
Diode LT 330D
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Abstract: No abstract text available
Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control
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39S256400/800/160T
0235b05
39S256400/80Q/160AT
A53SbDS
D1113G0
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3 V 4M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 8M x 64/72-Bit 2 Bank SDRAM Module HYS 64 72 V4200GU HYS 64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications
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64/72-Bit
V4200GU
V8220GU
PC100
D1233Qfl
V4200/8220G
BE35bD5
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Untitled
Abstract: No abstract text available
Text: SIEM ENS PNP Silicon Darlington Transistor BC 516 • High current gain • High collector current • Complementary type: BC 517 NPN Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1) E TO-92 Maximum Ratings Parameter
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Q62702-C944
BE35bD5
Q12D553
Q1E05E4
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