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    TRANSISTOR BC 115 Search Results

    TRANSISTOR BC 115 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW

    857T

    Abstract: BC857AT BC857BT SC-75
    Text: BC 857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs


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    PDF 857AT SC-75 857BT VPS05996 EHP00381 EHP00380 Nov-03-1999 EHP00382 EHP00379 857T BC857AT BC857BT SC-75

    C2373

    Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


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    PDF Q62702-C2373 OT-363 May-12-1998 C2373 Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor

    5b1 transistor

    Abstract: transistor 5B1 H12E
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original
    PDF OT-363 Q62702-2373 Jan-20-1997 5b1 transistor transistor 5B1 H12E

    1ps sot

    Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 847PN OT-363 Q62702-C2374 May-12-1998 1ps sot bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original
    PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    bc 104 npn transistor

    Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    Original
    PDF 847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c

    transistor bc icbo nA npn

    Abstract: 847S Q62702-C2372 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original
    PDF Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs

    transistor BC 450

    Abstract: marking 1DS sot363 1ds sot
    Text: BC 846S NPN Silicon AF Transistor Array Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code


    Original
    PDF OT-363 Q62702- Nov-27-1996 transistor BC 450 marking 1DS sot363 1ds sot

    bc 104 npn transistor

    Abstract: TRANSISTOR BC 6 pnp
    Text: BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    Original
    PDF 846PN Q62702- OT-363 Nov-27-1996 bc 104 npn transistor TRANSISTOR BC 6 pnp

    817-U

    Abstract: 6Bs transistor
    Text: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197


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    PDF VPW09197 EHA07178 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 817-U 6Bs transistor

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan
    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan
    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15

    2SC1815

    Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
    Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL


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    PDF 2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR

    3cs transistor

    Abstract: marking 3cs 6c2 transistor PS056
    Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package


    OCR Scan
    PDF PS05604 Q62702-C2373 OT-363 Mav-12-1998 3cs transistor marking 3cs 6c2 transistor PS056

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan
    PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan
    PDF 847PN Q62702-C2374 OT-363 Mav-12-1998

    846PN

    Abstract: VQE 11E
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan
    PDF 846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E

    transistors BC 543

    Abstract: TRANSISTOR BC 748 transistor BC 543
    Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration


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    PDF Q62702-2373 OT-363 fiS35bD5 235LD5 BC857S 0535bD5 012Dbl3 transistors BC 543 TRANSISTOR BC 748 transistor BC 543

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 856S PNP Silicon AF Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package C1 r R TR


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    PDF Q62702-C2532 OT-363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846S NPN Silicon A F Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package H FI R


    OCR Scan
    PDF Q62702-C2529 OT-363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan
    PDF 846PN 62702-C253x

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


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    PDF Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor