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    TRANSISTOR BC 100 Search Results

    TRANSISTOR BC 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C2320

    Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
    Text: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W


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    17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 C2320 BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324 PDF

    5Cs transistor

    Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328
    Text: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W


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    07-16W 07-25W 07-40W 08-16W 08-25W 08-40W Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 5Cs transistor BC 170 transistor TRANSISTOR BC 807w PDF

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW PDF

    transistor Bc 580

    Abstract: TRANSISTOR BC 450 pnp transistor BC 660
    Text: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data  For AF input stage and driver applications 3  High current gain  Low collector-emitter saturation voltage 1  complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration


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    847BL3, 848BL3 857BL3, 858BL3 847BL3 transistor Bc 580 TRANSISTOR BC 450 pnp transistor BC 660 PDF

    transistor bc 517

    Abstract: BC517 transistor bc 100 Q62702-C825 TRANSISTOR BC c825 BC 517 TRANSISTOR BC 135
    Text: BC 517 NPN Silicon Darlington Transistor BC 517 High current gain ● High collector current ● Complementary type: BC 516 PNP ● 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 – Q62702-C825 C TO-92 B E Maximum Ratings Parameter


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    Q62702-C825 transistor bc 517 BC517 transistor bc 100 Q62702-C825 TRANSISTOR BC c825 BC 517 TRANSISTOR BC 135 PDF

    857T

    Abstract: 857BT
    Text: BC 857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs


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    VPS05996 857AT 857BT SC-75 SC-75 EHP00381 EHP00380 Apr-20-2000 EHP00382 EHP00379 857T 857BT PDF

    857T

    Abstract: BC857AT BC857BT SC-75
    Text: BC 857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs


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    857AT SC-75 857BT VPS05996 EHP00381 EHP00380 Nov-03-1999 EHP00382 EHP00379 857T BC857AT BC857BT SC-75 PDF

    transistor BC 368

    Abstract: TRANSISTOR BC 368 marking IC 368 TRANSISTOR bC 369 C62702-C747 BC368 bc 369 pnp silicon transistor
    Text: NPN Silicon AF Transistor BC 368 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 369 PNP ● 2 3 1 Type Marking Ordering Code BC 368 – C62702-C747 Pin Configuration 1 2 3 E C Package1)


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    C62702-C747 transistor BC 368 TRANSISTOR BC 368 marking IC 368 TRANSISTOR bC 369 C62702-C747 BC368 bc 369 pnp silicon transistor PDF

    transistor bc 318

    Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
    Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol


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    Q62702-C944 transistor bc 318 TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517 PDF

    bc516

    Abstract: C944 Q62702-C944 TRANSISTOR BC BC 517 TRANSISTOR BC 135 517 bc
    Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol


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    Q62702-C944 bc516 C944 Q62702-C944 TRANSISTOR BC BC 517 TRANSISTOR BC 135 517 bc PDF

    TRANSISTOR C 369

    Abstract: TRANSISTOR bC 369 bc 369 pnp silicon transistor TRANSISTOR BC TRANSISTOR bC 369.remplacent C62702-C748 BC 369 90 156 369 transistor BC 368 bc369
    Text: PNP Silicon AF Transistor BC 369 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 368 NPN ● 2 3 1 Type Marking Ordering Code BC 369 – C62702-C748 Pin Configuration 1 2 3 E C Package1)


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    C62702-C748 TRANSISTOR C 369 TRANSISTOR bC 369 bc 369 pnp silicon transistor TRANSISTOR BC TRANSISTOR bC 369.remplacent C62702-C748 BC 369 90 156 369 transistor BC 368 bc369 PDF

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr PDF

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660 PDF

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


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    Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15 PDF

    transistor BC 308

    Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
    Text: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low


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    BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308 PDF

    transistor bc 144

    Abstract: TRANSISTOR
    Text: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)


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    C62702-C747 flS35fc D12D515 023SbGS Q15051L transistor bc 144 TRANSISTOR PDF

    transistor C 639 W

    Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
    Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A


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    150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639 PDF

    transistor bc 100

    Abstract: BC215 BC 215
    Text: BC 215 B NP SILICON TRANSISTOR, EP ITAXIAL PLANAR RANSISTOR PNP SILIC IU M , PLAN A R E P IT A X IA L ha PNP planar épitaxial BC 215 B is intended ar général purpose ? transistor PNP planar BC 215 B est destiné aux •âges généraux CD >° -5 0 V —500 mA


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon Darlington Transistor BC 516 • High current gain • High collector current • Complementary type: BC 517 NPN Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1) E TO-92 Maximum Ratings Parameter


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    Q62702-C944 BE35bD5 Q12D553 Q1E05E4 PDF

    q1205

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)


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    C62702-C748 150iiin E35LD5 flE35bQ5 q1205 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter


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    Q62702-C825 111Jlllll! fl235b05 053SbOS D1SQ52Ã PDF

    transistor BC 331

    Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
    Text: *BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H* Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit


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    BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182 PDF

    transistor vc 548

    Abstract: Transistor Bc54
    Text: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR


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    BC546 BC547 BC548 270TYP 050TYP transistor vc 548 Transistor Bc54 PDF

    TRANSISTOR BC 394

    Abstract: NPN Silicon Epitaxial Planar Transistor TRANSISTOR BC 6 pnp bc394 bc 394
    Text: BC 394 SILICON PLANAR NPN HIGH VOLTAGE A M PLIFIER The BC 394 is a silicon planar epitaxial NPN transistor in Jedec: T O -1 8 metal case, designed fo r general purpose high-voltage and video am p lifie r applications. The com plem entary PNP type is the BC 393.


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    1/75MECHANICAL TRANSISTOR BC 394 NPN Silicon Epitaxial Planar Transistor TRANSISTOR BC 6 pnp bc394 bc 394 PDF