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    TRANSISTOR BA 92 SAMSUNG TRANSISTOR Search Results

    TRANSISTOR BA 92 SAMSUNG TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BA 92 SAMSUNG TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC MOTHERBOARD CIRCUIT diagram

    Abstract: CX93001-EIS_V0.2002-V92 CX93001 CX93001-EIS mobile MOTHERBOARD CIRCUIT diagram toshiba MOTHERBOARD CIRCUIT diagram CX20548-11Z CSM92 computer motherboard circuit diagram I7 motherboard circuit diagram
    Text: CSM92 Reference Modem User’s Guide Conexant Proprietary Information Doc. No. USG-201664 A June 3, 2008 CSM92 Reference Modem User’s Guide Revision Record Revision A Date 6/3/2008 Comments Initial release 2008 Conexant Systems, Inc. All Rights Reserved.


    Original     		PDF CSM92 USG-201664 ERJ6GEYJ152V MC0805-152-JTW MCR10EZPJ152 50ppm; TTL/15pF; 000MHz PC MOTHERBOARD CIRCUIT diagram CX93001-EIS_V0.2002-V92 CX93001 CX93001-EIS mobile MOTHERBOARD CIRCUIT diagram toshiba MOTHERBOARD CIRCUIT diagram CX20548-11Z computer motherboard circuit diagram I7 motherboard circuit diagram

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		PDF S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    tda 12155

    Abstract: PURE SINE WAVE inverter schematic diagram schematic diagram ac-dc inverter inverter PURE SINE WAVE schematic diagram TRANSISTOR KT 838 1 phase pure sine wave inverter schematic sine wave inverter schematic IVT HS 400 5.1 AUDIO AMP TDA 2030 sine wave inverter schematic IVT pure sine wave using TL 494
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


    Original     		PDF STD111 tda 12155 PURE SINE WAVE inverter schematic diagram schematic diagram ac-dc inverter inverter PURE SINE WAVE schematic diagram TRANSISTOR KT 838 1 phase pure sine wave inverter schematic sine wave inverter schematic IVT HS 400 5.1 AUDIO AMP TDA 2030 sine wave inverter schematic IVT pure sine wave using TL 494

    tda 12155

    Abstract: CL 6807 PURE SINE WAVE inverter schematic diagram TDA 7288 verilog code for 10 gb ethernet tda 7257 Modified Booth Multipliers oa31 diode SAMSUNG DATASHEET CHIP CAPACITOR CL-21 capacitor
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


    Original     		PDF STD111 tda 12155 CL 6807 PURE SINE WAVE inverter schematic diagram TDA 7288 verilog code for 10 gb ethernet tda 7257 Modified Booth Multipliers oa31 diode SAMSUNG DATASHEET CHIP CAPACITOR CL-21 capacitor

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash

    1E49Ah

    Abstract: Samsung nand MLC
    Text: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5


    Original     		PDF OneNAND256 KFG5616x1A-DEB5) OneNAND256 KFG5616Q1A-DEB5 KFG5616D1A-DEB5 KFG5616U1A-DIB5 67FBGA /48TSOP1 1E49Ah Samsung nand MLC

    OneNAND

    Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 256Mb 67FBGA KFG5616Q1A-PEB6 48TSOP1 KFG5616U1A-DIB6 KFG5616U1A-PIB6 OneNAND SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h

    512MB NOR FLASH

    Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 512Mb 63FBGA KFG1216Q2A-FEB5 63FBGA KFG1216U2A-DIB5 KFG1216U2A-FIB5 512MB NOR FLASH "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH

    schematic lcd monitor samsung 18,5 inch

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Report oneNand flash oneNand SAMSUNG 256Mb NAND Flash Qualification Reliability 4GB MLC NAND NAND flash memory internal flash corruption KFG5616Q1A-DEB5 mlc nand flash lsb msb
    Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB5 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND256 KFG5616x1A-xxB5) KFG5616Q1A-DEB5 256Mb 67FBGA KFG5616Q1A-PEB5 48TSOP1 KFG5616U1A-DIB5 KFG5616U1A-PIB5 schematic lcd monitor samsung 18,5 inch SAMSUNG 256Mb NAND Flash Qualification Report oneNand flash oneNand SAMSUNG 256Mb NAND Flash Qualification Reliability 4GB MLC NAND NAND flash memory internal flash corruption KFG5616Q1A-DEB5 mlc nand flash lsb msb

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    KFG1216x2A-xxB5

    Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) 512Mb KFG1216Q2A 63FBGA /63FBGA KFG1216D2A KFG1216U2A KFG1216x2A-xxB5 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report KFG1216D2A KFG1216Q2A KFG1216U2A

    Toggle DDR NAND flash

    Abstract: samsung toggle mode NAND
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Toggle DDR NAND flash samsung toggle mode NAND

    KFG1216U2A-DIB6

    Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 512Mb 63FBGA KFG1216Q2A-FEB6 63FBGA KFG1216U2A-DIB6 KFG1216U2A-FIB6 KFG1216U2A-DIB6 mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6

    TDA 9361 PS

    Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
    Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		PDF STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    onenand

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB5) KFG5616Q1A-DEB5 256Mb 67FBGA KFG5616Q1A-PEB5 48TSOP1 KFG5616D1A-DEB5 KFG5616D1A-PEB5 onenand

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6


    Original     		PDF OneNAND256 KFG5616x1A-DEB6) OneNAND256 KFG5616Q1A-DEB6 KFG5616D1A-DEB6 KFG5616U1A-DIB6 67FBGA /48TSOP1

    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5

    KFM5616Q1A-DEB6

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6

    Untitled

    Abstract: No abstract text available
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216D2A-DEB6 KFG1216D2A-FEB6 KFG1216U2A-DIB6 KFG1216U2A-FIB6 63FBGA