TRANSISTOR BA 14 Search Results

TRANSISTOR BA 14 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BA 14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1237 Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +	Original	PDF	2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 SC-62 R0039A 2SB1237 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
rohm 2sd1664 Abstract: No abstract text available Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +	Original	PDF	2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 R1102A rohm 2sd1664
Transistor 9012 ax Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012 Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	PDF	S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
RF TRANSISTOR 10GHZ Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking Text: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany	Original	PDF	BFP720 BFP720 OT343-PO OT343 OT343-FP OT323-TP RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
Untitled Abstract: No abstract text available Text: SKHI 24 R . Absolute Maximum Ratings Symbol Conditions U6.434 U6.-34 d.%BLA%'9, 8.A F%AA'H +.'B&1, A)3¥ 54A%B 914&' +.'B¥ M]1/O E%BA%B A,&K G%),4B E%BA%B &+,)&1, G%),4B M3&`¥O 3&`¥ 9JBG/41 -),a%,4GH C.'',GB.) ,3BB,) +.'B&1, 9,49, &G).99	Original	PDF
2SA1300L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)	Original	PDF	2SA1300 -50mA) OT-89 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K 2SA1300L-xx-T92-R 2SA1300L
BE555MN Abstract: No abstract text available Text: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :	OCR Scan	PDF	100uA MP-48 MP-24 BE555MN
telefunken ed 32 5000 Abstract: No abstract text available Text: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le phone. Features • Sm all fe ed ba ck capacitance	OCR Scan	PDF	BFP81 BFP81 20-Jan-99 telefunken ed 32 5000
ba6489fs Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300 Text: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »	OCR Scan	PDF	SA6470/ BA6569K BA6600K BA6607K BA6608K BA6610AK BA6612K VBH6620K BA12000 BA13000 ba6489fs BA6479AFP-Y BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
transistor ba 752 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: TOSHI BA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE a n U nit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage VG1D0 -9 V Gate2-Drain Voltage VG2D0 -9 V	OCR Scan	PDF	3SK240
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.	OCR Scan	PDF	2SC3582 2SC3582
MRF911 Abstract: No abstract text available Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF911 The RF Line f j = 5.0 G H z @ 30 m A HIGH FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQUENCY TRANSISTOR . . . des ig n ed w id e ba n d NPN S IL IC O N p r i m a r i l y f o r use in h ig h gain, l o w - n o is e t u n e d and	OCR Scan	PDF	MRF911 MRF911
transistor smd z8 Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers	OCR Scan	PDF	MRF6408 MRF6408PH184 MRF6408 transistor smd z8 RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8

Untitled Abstract: No abstract text available Text: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c	OCR Scan	PDF	O-92MOD 2SA966 1501c
2N6439 Abstract: BH Rf transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.	OCR Scan	PDF
2SC1817 Abstract: TRANSISTOR PJ Text: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.	OCR Scan	PDF	2SC1817 12--Watfc Vcc-12 T0-22Ã Vctr-10Y 27MHz TRANSISTOR PJ
Motorola 3-351 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery	OCR Scan	PDF	BUS50 1Q7A-05 O-204AE -125V) Motorola 3-351
c 2579 transistor Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor N P N Silico n M PS5179 M otorola Preferred D evice COLLECTOR 3 2 ba se" 1 EMITTER M A X IM U M R A T IN G S Rating C o lle cto r-E m itte r Voltage Symbol Value Unit Vdc Vdc VCEO 12 C o lle c t o r - B a s e Voltage	OCR Scan	PDF	PS5179 1N3195 2j200 c 2579 transistor
Untitled Abstract: No abstract text available Text: □ Q B' ï ba b 3 • ' ' P 3^-11 S G S -T H O M S O N G F . H L iÊ T T M D Ê i B U Z 4 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S-THOMSON TYPE V Dss BUZ42 500 V 3DE RDS on 2 Q » Id 4 A • HIGH VOLTAGE - FOR OFF-LINE SM PS • ULTRA FAST SW ITCHING FOR OPERATION	OCR Scan	PDF	BUZ42
Untitled Abstract: No abstract text available Text: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed	OCR Scan	PDF	T1P2701012-SP 500MHz 10watts 15Watts
IH33 Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator Text: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR	OCR Scan	PDF	ECG978 ECG978 22-SECOND IH33 LIMING relay relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
C0033 Abstract: 2052-5636-02 ATC100A PH2323-14 6010.5 T50M50 VCC28 Text: ArfKO‘A W an A M P company CW Power Transistor, 14W 2.3 GHz PH2323-14 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Gold Metalization System Hermetic Metal/Ceramic Package	OCR Scan	PDF	PH2323-14 -T50M50A ATC100A C0033 2052-5636-02 PH2323-14 6010.5 T50M50 VCC28
MMBT5086 Abstract: ALI03 Transistor marking S PNP marking VA sot-23 Text: SAMSUNG S EM I C ONDU C T OR INC MMBT5086 14E D I 0007573 M \| PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current	OCR Scan	PDF	MMBT5086 OT-23 10OfiA ALI03 Transistor marking S PNP marking VA sot-23

TRANSISTOR BA 14 Search Results

TRANSISTOR BA 14 Result Highlights (5)

TRANSISTOR BA 14 Datasheets Context Search

2SB1237

rohm 2sd1664

Transistor 9012 ax

RF TRANSISTOR 10GHZ

Untitled

2SA1300L

BE555MN

telefunken ed 32 5000

ba6489fs

transistor ba 752

Untitled

Untitled

MRF911

transistor smd z8

Untitled

2N6439

2SC1817

Motorola 3-351

c 2579 transistor

Untitled

Untitled

IH33

C0033

MMBT5086