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    TRANSISTOR B826 Search Results

    TRANSISTOR B826 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B826 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor S 40443

    Abstract: No abstract text available
    Text: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures


    OCR Scan     		bbS3T31 0024T37 BFG197; BFG197/X; BFG197/XR BFG197 BFG197 OT143 BFG197/X Transistor S 40443 PDF

    A CLIPPER CIRCUIT APPLICATIONS

    Abstract: full bridge smps basic ic tda 4646 TDA4646 smps without transformer ferrite core transformer siemens matsushita tv smps power supply ic tda smps new positive clipper
    Text: Simple pump circuit with sine choke for SMPS The authors: ANDREA UNSELD, Dipl.-Ing. FH , is an R&D engineer at the Capacitors Division of Siemens Matsushita Components in Heidenheim. PETER PRELLER, Dipl.-Ing., is an applications engineer for image and video systems


    Original     		B82614 A CLIPPER CIRCUIT APPLICATIONS full bridge smps basic ic tda 4646 TDA4646 smps without transformer ferrite core transformer siemens matsushita tv smps power supply ic tda smps new positive clipper PDF

    BUZ90 equivalent

    Abstract: B82724-J2182-N21 450 watt smps Design 10K275 FERRITES N67 TDA tda 7805 s10k300 THERMISTOR siemens CNY17-2 TV flyback ferrite ic 7805 TV
    Text: Switched-mode power supplies for color TV sets Application Notes http://www.siemens.de/pr/index.htm Advantages of switched-mode power supplies Circuit description Fig. 1 depicts a common SMPS circuit for TV sets. It operates in the wide input voltage range from 90 to 280 V and delivers an output of 175 W for color TV sets with 29-inch screens. The selfoscillating flyback converter is controlled by a Siemens IC, the


    Original     		B32620 B32621 B32621 BUZ90 equivalent B82724-J2182-N21 450 watt smps Design 10K275 FERRITES N67 TDA tda 7805 s10k300 THERMISTOR siemens CNY17-2 TV flyback ferrite ic 7805 TV PDF

    Epcos n67 material

    Abstract: 35L DIODE SIEMENS epcos regulator BUZ90 equivalent siemens capacitor 1UF 630V BUZ90 B82724J2182 TDA tda 7805 7805 voltage regulator metal type 1000 WATT smps
    Text: Switched-mode power supplies for color TV sets Application Notes http://www.siemens.de/pr/index.htm Advantages of switched-mode power supplies Circuit description Fig. 1 depicts a common SMPS circuit for TV sets. It operates in the wide input voltage range from 90 to 280 V and delivers an output of 175 W for color TV sets with 29-inch screens. The selfoscillating flyback converter is controlled by a Siemens IC, the


    Original     		PDF

    MB8264A-15

    Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
    Text: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also


    OCR Scan     		MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MB8294A-12-W MB82S4A-1B-W MB8264A-15 MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W PDF

    zener diode c16 ph

    Abstract: PS331 SOT23-GSD C18 ph zener SMBJ20A SFC1605A SFC-1605A PS-3150 MM1414D ph c18 zener diode
    Text: PS3153 / PS3154 Li Ion Smart Battery Manager Module with Safety Features • • • • • • • • • PCB Assembly Standard sized modules for assembly into custom and standard sized battery packs Designed to work with 3cell 3153 and 4 cell (3154) series Li Ion configurations


    Original     		PS3153 PS3154 14-bit zener diode c16 ph PS331 SOT23-GSD C18 ph zener SMBJ20A SFC1605A SFC-1605A PS-3150 MM1414D ph c18 zener diode PDF

    B82S4

    Abstract: MB8264 11A410 TM22S
    Text: FUJITSU M I C R O E L E C T R ON I C S 7fl D e J^BTMITLiS DGDaT?3 1 | ~ 3 7 49 76 2 F U J I T S U M I C R O E L E C T R O N I C S prelim inary 78C 0 2 9 7 3 DT-Ÿ6'21'/:ir FUJITSU MOS M em ories M B 8 2 6 4 Â -1 2-W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic


    OCR Scan     		536-Bit MB8264A-W B82S4 MB8264 11A410 TM22S PDF

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also


    OCR Scan     		536-Bit MB8264A-W 004pn PDF

    8264A-10

    Abstract: MB8264A-15 8264A-12 TRANSISTOR BC 187 MB8264A MB8264A-10 MB8264A-12 50N02 ti95
    Text: FU JITSU MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY MB 8264A-10 MB 8264A-12 MB 8264A-15 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu M B 8 2 6 4 A is a fu lly decoded, dynamic random access memory organized as 65,536 one-bit words. The design is optim ized fo r high-speed,


    OCR Scan     		65536-BIT 264A-10 264A-12 264A-15 536-BIT MB8264A 183I4 264A-12 8264A-10 MB8264A-15 8264A-12 TRANSISTOR BC 187 MB8264A-10 MB8264A-12 50N02 ti95 PDF

    B-5536

    Abstract: 0z96
    Text: FUJITSU MICROELECTRONICS 7fi D E I 37MT7bE GOOSES? 3 3 7 4 9 7 6 2 F U J I T S U M IC R O E LE C TR O N IC S 78C 0 2 9 5 7 iMOS B5536 -'BIT ;? FU JIT SU DYNAMIC-ìRANDOM ACCESS MEMORY, MB 8264A~10 MB 8264A-12 MB 8264A-15 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY


    OCR Scan     		37MT7bE B5536 536-BIT 264A-12 264A-15 16-LEAD DIP-16PM03) 264A-10 B-5536 0z96 PDF

    8264A-15

    Abstract: 778j T5045 fujitsu memory CL 8264
    Text: F U J IT S U DYNAMIC RANDOM ACCESS MEMORY MB 8264A-10 MB 8264A-12 MB 8264A-15 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu M B 8 2 6 4 A is a fu lly decoded, dynam ic random access m em ory organized as 6 5 ,5 3 6 one-bit w ords. T he design is o p tim ize d for high-speed,


    OCR Scan     		264A-10 264A-12 264A-15 536-BIT 27IMAX 18-pad 8264A-15 778j T5045 fujitsu memory CL 8264 PDF

    31017

    Abstract: MB8266A MB8266A-10
    Text: F U J IT S U MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY MB 8 2 6 6 A -1 0 M B 8 2 6 6 A -1 2 M B 8 2 6 6 A -1 5 6 5 ,5 3 6 -B IT D Y N A M IC RANDO M ACCESS M EM O RY The Fujitsu MB 8266A is a fu lly decoded, dynam ic random access memory organized as 65,536 one-bit words. The design is optim ized fo r high-speed,


    OCR Scan     		65536-BIT 536-BIT 183I4 651MAX 266A-10 266A-12 266A-15 18-pad LCC-18C-F02) 31017 MB8266A MB8266A-10 PDF

    EZ-32

    Abstract: No abstract text available
    Text: JUJITSU MICROELECTRONICS 7 f l D E | 3 7 M T ? b E G003D00 T f ~ 3749762 FUJ [TSU MICROELECTRONICS J ß C Q3QOO D'P 3*/5' MB 8266A-10 MB 8266A-12 MB 8266A-15 FUJITSU 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 8266A is a fully decoded, dynamic random access memory


    OCR Scan     		G003D00 536-BIT 266A-10 266A-15 18-pad 18C-F02) EZ-32 PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF