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    TRANSISTOR B A O 331 Search Results

    TRANSISTOR B A O 331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B A O 331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A HF 331 transistor

    Untitled

    Abstract: No abstract text available
    Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.


    OCR Scan     		PDF 0Q247fll BFG17A OT143.

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in


    OCR Scan     		PDF TLP631 TLP632 E67349 TLP631

    npn transistor dc 558

    Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
    Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22

    3004x

    Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
    Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna


    OCR Scan     		PDF BFX55 BFX55 Q60206-X55 50ff1A 3004x antenna amplifiers Transistor BFX 25 63310-A Q60206-X55

    J295

    Abstract: BU705 BU705D
    Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency


    OCR Scan     		PDF 711QfiHt. BU705 BU705D T-33-P OT93A BU705D BU705D) J295 BU705

    J119 transistor

    Abstract: enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104
    Text: Ph » |P ^ « n jicon ducto» ^ ^ bfc,53^ 3 1 D DB^ fiM b M APX Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN C O N F IG U R A T IO N • High pow er gain • Low noise figure • G o o d therm al stability


    OCR Scan     		PDF BLF145 OT123 -SOT123 7Z31SOS. 9-j14 5-j14 J119 transistor enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104

    2SC3844

    Abstract: 374171 reo4
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range


    OCR Scan     		PDF 374R7b5 2SC3844 2SC3844 200jiH -450V 374171 reo4

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N M O N O L IT H IC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT TD62504P-H 7eh SINGLE DRIVER : C O M M O N EMITTRER Th e T D 6 2 5 0 4 P -H is com prised o f seven o r five N PN Transistor Arrays. A p p lic a tio n s include relay, ham m er, lam p a n d disp lay


    OCR Scan     		PDF TD62504P-H IP16-P -300A 50//S,

    GK transistor 42

    Abstract: transistor FET cd 332 m
    Text: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G


    OCR Scan     		PDF MT-42 012inch) GK transistor 42 transistor FET cd 332 m

    bd142

    Abstract: No abstract text available
    Text: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves


    OCR Scan     		PDF BD142 M3D2S71 92CSH2M7K1 23C6RI 92CS-12326RI

    MRF2016M

    Abstract: MRF201 MRF2016
    Text: 12E D £ b3b?254 ÜOflñGSa 4 | MOT ORC LA SC MOTOROLA "33-11 XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF2016M T h e R F L in e 16 W 2 GHz M IC R O W A V E POW ER T R A N S IS T O R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL IC O N . . . d esign ed for C la ss B and C com m on b a se broadband am plifier


    OCR Scan     		PDF MRF2016M MRF2016M MRF201 MRF2016

    transistor B A O 331

    Abstract: transistor P 0.2 V D F 331 TRANSISTOR
    Text: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO P O W E R AM PLIFIER DC TO DC CO N VER TER • High Current Capability • High Power Dissipation» Complement to KSB817 A B S O L U T E MAXIMUM RATIN GS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSD1047 KSB817 transistor B A O 331 transistor P 0.2 V D F 331 TRANSISTOR

    BSP108

    Abstract: transistor marking ST4
    Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended


    OCR Scan     		PDF BSP108 OT223 BSP108 transistor marking ST4

    CA3046 equivalent

    Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
    Text: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S

    transistor BC 331

    Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
    Text: *BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H* Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit


    OCR Scan     		PDF BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182

    a331j

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to


    OCR Scan     		PDF MRF6404 a331j

    transistor B A O 331

    Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
    Text: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350


    OCR Scan     		PDF MJE340 MJE350 0QG77fe transistor B A O 331 mje340 equivalent d 331 TRANSISTOR equivalent

    TBA331

    Abstract: transistor d 331 VBE3-VBE41 d 331 Transistor D F 331 TRANSISTOR transistor 331 C 331 Transistor transistor h 331 331 transistor transistor d 331 data
    Text: 07 D | s G S-THOMSON 0 7 E D I| 7 ^^22^ 23377 0 0 1 1 3 Q Ó7C 1 7 0 3 1 fi D T -V 5 -2 S -1 TBA331 LINEAR INTEGRATED CIRCUITS G ENERAL PURPOSE TRANSISTOR A R R A Y T h e T B A 3 3 1 is an arra y o f 5 m o n o lith ic N P N tra n sisto rs in a 14 -le a d d ua l in -lin e plastic package. T w o


    OCR Scan     		PDF 00113Q7 TBA331 14-lead TBA331 transistor d 331 VBE3-VBE41 d 331 Transistor D F 331 TRANSISTOR transistor 331 C 331 Transistor transistor h 331 331 transistor transistor d 331 data

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSD5001 1ME 0 | 0007b3fl 7 NPN t r i p l e d if f u s e d PLANAR SILICON TRANSISTOR T -3 3 -t 3 C O LO R T V HORIZONTAL O U TPU T A PPLICA TIO N S DAMPER DIODE BUILT IN HIGH Collector-Base Voltage’ V«o=1500V A B S O LU T E MAXIMUM RATINGS (Ta= 2 5 ° C)


    OCR Scan     		PDF 0007b3fl KSD5001 0QG77fe

    transistor A4t 45

    Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15
    Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e


    OCR Scan     		PDF O-220 C67078-A1307-A3 023Sfc 0535bOS transistor A4t 45 transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15

    DF 331 TRANSISTOR

    Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
    Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S


    OCR Scan     		PDF 0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    p626

    Abstract: IC P626 TLP626-1
    Text: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled


    OCR Scan     		PDF TLP626 TLP626, p626 IC P626 TLP626-1