TRANSISTOR B 116 Search Results

TRANSISTOR B 116 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR B 116 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD443 Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power	Original	BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
transistor marking WV2 Abstract: No abstract text available Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated	OCR Scan	FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2	PDF
TRIMMER cap no-2222 809 07015 Abstract: BD433 BLW77 Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am	OCR Scan	BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77	PDF
Philips FA 291 Abstract: ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor Text: b b i a i B l 0Q3BDÛ7 E l l M A p x ^roductspecjflcati^ Philips Semiconductors ^ NPN 2 GHz wideband transistor BFT24 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in	OCR Scan	BFT24 Philips FA 291 ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor	PDF
transistor fp 1016 Abstract: BFQ34T ON4497 FP 801 UBB361 Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The	OCR Scan	ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361	PDF
transistor BR 471 A Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675 Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan	N125A 626/1177A2 transistor BR 471 A be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675	PDF
BFQ65 Abstract: No abstract text available Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz	OCR Scan	QQ31S BFQ65 BFQ65	PDF
BFG65 Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332 Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .	OCR Scan	BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332	PDF
E2p 96 transistor Abstract: BFS17 BFS17A MSB003 Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.	OCR Scan	711Dflgb BFS17A MSB003 E2p 96 transistor BFS17	PDF
Untitled Abstract: No abstract text available Text: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in	OCR Scan	BFT25	PDF
Untitled Abstract: No abstract text available Text: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module	OCR Scan		PDF
TS142 Abstract: BFT25 Text: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in	OCR Scan	7110aab BFT25 TS142 BFT25	PDF
Untitled Abstract: No abstract text available Text: KSB1116/1116A PN P EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING T O -8 2 • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Collector-Base Voltage Symbol K S B 1 116 K S B 1 116A KS B 1116	OCR Scan	KSB1116/1116A KSD1616/1616A KSB1116A CycleS50% 7Tb4142	PDF

7901S Abstract: No abstract text available Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.	OCR Scan	EN5099 FC154 FC154 2SC4270 2SA1669, 7901S	PDF
f22e Abstract: Scans-0010547 din 867 BFT12 Q62702 Text: B FT12 l\IPI\l-Silizium-HF-Planar-Transistor B F T 1 2 is t ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B3 DIN 41 867 äh n l.T O -50 für allgemeine Verwendung in Verstärkern bis in den GHz-Bereich, z .B . für Breitbandantennenverstärker hoher Ausgangsleistung und Linearität sowie für Os	OCR Scan	BFT12 Q62702â 140mA f22e Scans-0010547 din 867 BFT12 Q62702	PDF
P3H7 Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma	PDF
c 879 transistor Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR Text: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF	OCR Scan	BFT24 7110fl2b 004517b c 879 transistor BFT24 t 326 Transistor 702 P TRANSISTOR	PDF
BFR134 Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37	OCR Scan	bbS3T31 BFR134 BFR134	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and	OCR Scan	0031bDb BFQ66 OT173 OT173X	PDF
Untitled Abstract: No abstract text available Text: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.	OCR Scan	BLV193 MRAS57	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX95 7Z66943	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.	OCR Scan	BFP96 OT173X BFQ32C.	PDF
BC369 Abstract: No abstract text available Text: Jv BC369 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 package, intended fo r low voltage, high current LF applications. BC368/BC369 is the matched complementary pair suitable fo r class-B output stages up to 3 W.	OCR Scan	BC369 BC368/BC369 BC369-10 BC369-25 BC369	PDF

TRANSISTOR B 116 Search Results

TRANSISTOR B 116 Result Highlights (5)

TRANSISTOR B 116 Datasheets Context Search

BD443

2sb504

transistor marking WV2

TRIMMER cap no-2222 809 07015

Philips FA 291

transistor fp 1016

transistor BR 471 A

BFQ65

BFG65

E2p 96 transistor

Untitled

Untitled

TS142

Untitled

7901S

f22e

P3H7

c 879 transistor

BFR134

Untitled

Untitled

Untitled

Untitled

BC369