18P4G
Abstract: 20P2N-A M63807FP M63807KP M63807P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63807P/FP/KP
300mA
M63807P/FP/KP
300mA)
18P4G
20P2N-A
M63807FP
M63807KP
M63807P
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18P4G
Abstract: 20P2N-A M63805FP M63805KP M63805P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63805P/FP/KP
300mA
M63805P/FP/KP
300mA)
18P4G
20P2N-A
M63805FP
M63805KP
M63805P
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18P4G
Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
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M63815P/FP/KP
300mA
M63815P/FP/KP
300mA)
18P4G
20P2N-A
M63815FP
M63815KP
M63815P
20P2N
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18P4G
Abstract: 20P2N-A M63817FP M63817KP M63817P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
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M63817P/FP/KP
300mA
M63817P/FP/KP
300mA)
18P4G
20P2N-A
M63817FP
M63817KP
M63817P
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LB1233
Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
Text: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially
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EN1188F
LB1231
500mA)
LB1231
LB1232
LB1233
LB1234
LB1233
LB1234
Array Of Independent Diodes, Dip16
LB1232
IN4 diode
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M63802FP
Abstract: M63802GP M63802KP M63802P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M63802P/FP/GP/KP
300mA
M63802P,
M63802FP,
M63802GP
M63802KP
300mA)
M63802FP
M63802P
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M63804FP
Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M63804P/FP/GP/KP
300mA
M63804P,
M63804FP,
M63804GP
M64804KP
300mA)
M63804FP
M63804KP
M63804P
4 digit 40 pin IC configuration
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transistor kp
Abstract: M63802FP M63802GP M63802KP M63802P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M63802P/FP/GP/KP
300mA
M63802P,
M63802FP,
M63802GP
M63802KP
300mA)
transistor kp
M63802FP
M63802P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M63802P/FP/GP/KP
300mA
M63802P,
M63802FP,
M63802GP
M63802KP
300mA)
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M63804FP
Abstract: M63804GP M63804KP M63804P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M63804P/FP/GP/KP
300mA
M63804P,
M63804FP,
M63804GP
M64804KP
300mA)
M63804FP
M63804KP
M63804P
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DIP18
Abstract: LB1741 mm 105k BUT 11 Transistor
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
DIP18
mm 105k
BUT 11 Transistor
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IC 4094
Abstract: LB1741 DIP18
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
IC 4094
DIP18
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M63812KP
Abstract: M63812P M63812FP M63812GP M63812 KP300
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63812P/FP/GP/KP
300mA
M63812P,
M63812FP,
M63812GP
M63812KP
300mA)
M63812P
M63812FP
M63812
KP300
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M63812FP
Abstract: M63812GP M63812KP M63812P M63812 16P2Z-A
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63812P/FP/GP/KP
300mA
M63812P,
M63812FP,
M63812GP
M63812KP
300mA)
M63812FP
M63812P
M63812
16P2Z-A
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8-channel PNP darlington array
Abstract: transistor 3007A 3007A-DIP18 EN3173B DIP18 LB1740 DARLINGTON TRANSISTOR ARRAY
Text: Ordering number:EN3173B Monolithic Digital IC LB1740 8-Channel, Current-Source Output, Darlington Transistor Array Overview Package Dimensions The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors and NPN transisitors.High output drive capability for
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EN3173B
LB1740
LB1740
007A-DIP18
LB1740]
500mA)
DIP18
8-channel PNP darlington array
transistor 3007A
3007A-DIP18
EN3173B
DIP18
DARLINGTON TRANSISTOR ARRAY
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M63814FP
Abstract: M63814GP M63814KP M63814P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current
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M63814P/FP/GP/KP
300mA
M63814P/FP/GP/KP
300mA)
M63814FP
M63814GP
M63814KP
M63814P
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LM389
Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
Text: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage
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LM389
LM389
LM386
LM389N
"transistors Vceo"
"low voltage audio power amplifier"
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LB1287
Abstract: LB1288 2663 transistor
Text: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in
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ENN266E
LB1287,
14-pin
004A-DIP14TD
LB1287
26max
400mA
30VLtd.
LB1288
2663 transistor
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LB1287
Abstract: LB1288
Text: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in
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ENN266E
LB1287,
14-pin
004A-DIP14TD
LB1287
26max
400mA
30VLtd.
LB1288
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PDF
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18P4G
Abstract: 20P2N-A M63817FP M63817KP M63817P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays
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M63817P/FP/KP
300mA
M63817P/FP/KP
18P4G
20P2N-A
M63817FP
M63817KP
M63817P
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array
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MTE2075
14-Lead
NTE2077
NTE2078,
NTE2084
NTE2079
16-Lead
NTE2080
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PDF
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Untitled
Abstract: No abstract text available
Text: 7^^707fc. 0015033 ^51 Ordering num ber: EN 266D LB1287.1288 N0.266D Monolithic Digital IC SA\YO i Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to
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OCR Scan
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707fc.
LB1287
14-pin
400mA
LB1288
DIP20H
DIP16F
MFP30S
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PDF
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IR2C32
Abstract: MWRC
Text: 7-Unit 60mA Transistor Array IR2C32A • IR2C32A 7-Unit 60mA Transistor Array Description Pin Connections The IR2C23A is a 7-circuit driver. ■ Features 1. Output breakdown voltage BVCeo = 20V MAX. 2. Output current capability Ioirr= 60mA (MAX.) 3. 16-pin dual-in-line package
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OCR Scan
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IR2C32A
IR2C23A
16-pin
IR2C32
MWRC
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PDF
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LB1287
Abstract: 2663 transistor booc power transistors LB1288
Text: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip
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OCR Scan
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LB1287J288
14-pin
LB1287
2663 transistor
booc power transistors
LB1288
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PDF
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