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    TRANSISTOR ARRAY 12V Search Results

    TRANSISTOR ARRAY 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ARRAY 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18P4G

    Abstract: 20P2N-A M63807FP M63807KP M63807P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63807P/FP/KP 300mA M63807P/FP/KP 300mA) 18P4G 20P2N-A M63807FP M63807KP M63807P

    18P4G

    Abstract: 20P2N-A M63805FP M63805KP M63805P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63805P/FP/KP 300mA M63805P/FP/KP 300mA) 18P4G 20P2N-A M63805FP M63805KP M63805P

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63815P/FP/KP 300mA M63815P/FP/KP 300mA) 18P4G 20P2N-A M63815FP M63815KP M63815P 20P2N

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 300mA) 18P4G 20P2N-A M63817FP M63817KP M63817P

    LB1233

    Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
    Text: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially


    Original     		PDF EN1188F LB1231 500mA) LB1231 LB1232 LB1233 LB1234 LB1233 LB1234 Array Of Independent Diodes, Dip16 LB1232 IN4 diode

    M63802FP

    Abstract: M63802GP M63802KP M63802P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) M63802FP M63802P

    M63804FP

    Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P 4 digit 40 pin IC configuration

    transistor kp

    Abstract: M63802FP M63802GP M63802KP M63802P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) transistor kp M63802FP M63802P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA)

    M63804FP

    Abstract: M63804GP M63804KP M63804P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		PDF M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P

    DIP18

    Abstract: LB1741 mm 105k BUT 11 Transistor
    Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.


    Original     		PDF ENN4094 LB1741 LB1741 500mA 18-pin 3007B-DIP18 LB1741] 51min DIP18 mm 105k BUT 11 Transistor

    IC 4094

    Abstract: LB1741 DIP18
    Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.


    Original     		PDF ENN4094 LB1741 LB1741 500mA 18-pin 3007B-DIP18 LB1741] 51min IC 4094 DIP18

    M63812KP

    Abstract: M63812P M63812FP M63812GP M63812 KP300
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63812P/FP/GP/KP 300mA M63812P, M63812FP, M63812GP M63812KP 300mA) M63812P M63812FP M63812 KP300

    M63812FP

    Abstract: M63812GP M63812KP M63812P M63812 16P2Z-A
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


    Original     		PDF M63812P/FP/GP/KP 300mA M63812P, M63812FP, M63812GP M63812KP 300mA) M63812FP M63812P M63812 16P2Z-A

    8-channel PNP darlington array

    Abstract: transistor 3007A 3007A-DIP18 EN3173B DIP18 LB1740 DARLINGTON TRANSISTOR ARRAY
    Text: Ordering number:EN3173B Monolithic Digital IC LB1740 8-Channel, Current-Source Output, Darlington Transistor Array Overview Package Dimensions The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors and NPN transisitors.High output drive capability for


    Original     		PDF EN3173B LB1740 LB1740 007A-DIP18 LB1740] 500mA) DIP18 8-channel PNP darlington array transistor 3007A 3007A-DIP18 EN3173B DIP18 DARLINGTON TRANSISTOR ARRAY

    M63814FP

    Abstract: M63814GP M63814KP M63814P
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current


    Original     		PDF M63814P/FP/GP/KP 300mA M63814P/FP/GP/KP 300mA) M63814FP M63814GP M63814KP M63814P

    LM389

    Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
    Text: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage


    Original     		PDF LM389 LM389 LM386 LM389N "transistors Vceo" "low voltage audio power amplifier"

    LB1287

    Abstract: LB1288 2663 transistor
    Text: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in


    Original     		PDF ENN266E LB1287, 14-pin 004A-DIP14TD LB1287 26max 400mA 30VLtd. LB1288 2663 transistor

    LB1287

    Abstract: LB1288
    Text: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in


    Original     		PDF ENN266E LB1287, 14-pin 004A-DIP14TD LB1287 26max 400mA 30VLtd. LB1288

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 18P4G 20P2N-A M63817FP M63817KP M63817P

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array


    OCR Scan     		PDF MTE2075 14-Lead NTE2077 NTE2078, NTE2084 NTE2079 16-Lead NTE2080

    Untitled

    Abstract: No abstract text available
    Text: 7^^707fc. 0015033 ^51 Ordering num ber: EN 266D LB1287.1288 N0.266D Monolithic Digital IC SA\YO i Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to


    OCR Scan     		PDF 707fc. LB1287 14-pin 400mA LB1288 DIP20H DIP16F MFP30S

    IR2C32

    Abstract: MWRC
    Text: 7-Unit 60mA Transistor Array IR2C32A • IR2C32A 7-Unit 60mA Transistor Array Description Pin Connections The IR2C23A is a 7-circuit driver. ■ Features 1. Output breakdown voltage BVCeo = 20V MAX. 2. Output current capability Ioirr= 60mA (MAX.) 3. 16-pin dual-in-line package


    OCR Scan     		PDF IR2C32A IR2C23A 16-pin IR2C32 MWRC

    LB1287

    Abstract: 2663 transistor booc power transistors LB1288
    Text: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip­


    OCR Scan     		PDF LB1287J288 14-pin LB1287 2663 transistor booc power transistors LB1288