Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Sym bol Value Unit Vd s 25 Vdc Drain-Gate Voltage Vdg 25 Vdc Gate-Source Voltage vgs -2 5 Vdc 10 mAdc 350 2.8 mW mWrc Rating Drain-Source Voltage Gate Current Total Device Dissipation a T a = 25°C Derate above 25°C Pd Junction Temperature Range
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Substrate alumina
Abstract: No abstract text available
Text: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12
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BAW56LT1*
OT-23
O-236AB)
BAW56LT1
Substrate alumina
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Untitled
Abstract: No abstract text available
Text: MPSA28 MPSA29* M AXIM UM RATINGS Symbol Rating CASE 29-04, STYLE 1 TO-92 TO-226AA Unit M PSA28 M PSA29 Collector-Emitter V oltage VCES 80 C ollector-Base V oltage VCBO 80 Em itter-Base V oltage v EBO 12 V dc >C 500 m A dc PD 625 5.0 mwrc Pd 1.5 12 W atts
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MPSA28
MPSA29*
PSA28
PSA29
O-226AA)
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BFR93L
Abstract: No abstract text available
Text: 12E D I t3b?aS4 GOaSIBfl T I M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage * . Rating VCEO 12 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage Ve b o 2.0 Vdc ic 25 mAdc Sym bol M ax Unit Po 225 mW 1.8 mwrc R»j a 556 °C/W
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BFR93L
BFR93L
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Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage VCBO 350 Vdc 5.0 Vdc Rating Emitter'Base Voltage vebo Base Current IB 250 mA Collector Current — Continuous ic 500 mA Symbol Max Unit PD 225 mW 1.8 mwrc
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MMBT6517LT1*
OT-23
O-236AB)
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mpsw
Abstract: No abstract text available
Text: MPSW13 MPSW14 M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VC E S 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vebo 10 Vdc Rating 'c 1.0 Ade Total Device Dissipation Ca T a = 25°C Derate above 25°C PD 1.0 8.0 Watt mwrc
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MPSW13
MPSW14
O-226AE)
mpsw
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Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 4.0 Vdc 'c 100 m Adc T/\ = 25°C PD 625 5.0 mW mW/°C Total Device Dissipation g Tc = 25°C Derate above 25°C Pd 1.5 12 mwrc Tj. Tstg - 55 to +15 0
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Untitled
Abstract: No abstract text available
Text: Rating Sym bol Value VCEO v CBO v EBO 40 Vdc 40 V dc 4.0 Vdc Collector Current — C o n tin u o u s 'c 50 m A dc Total Device D issip ation a- T a = 25°C Derate a bove 25°C PD 350 2.8 mW mWrc TJ ' T stg - 55 to + 135 °C Symbol Max Unit 357 °C/W Collector-Emitter V oltage
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F , 12E D J b3fc.7aS4 QOfit.771 M | T-Q'Zg' M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage Rating Vd s 25 Vdc Gate-Source Voltage Vq s 25 Vdc Ig 10 mAdc Sym bol M ax Unit PD 225 mW 1.8 mwrc R0JA 556 °C/W Pd 300 mW 2.4 mW/°C
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MMBFJ310L
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value Unit VCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage v EBO 4.0 Vdc ic 50 mAdc Symbol Max Unit PD 225 mW 1.8 mwrc R#j a 556 °C/W Pd 300 mW 2.4 m W PC fiflJA 417 °C/W VHF MIXER TRANSISTOR TJ ' T sta - 5 5 to +150
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MMBTH24LT1*
OT-23
O-236AB)
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2N390S
Abstract: No abstract text available
Text: M AXIM U M RATINGS Rating Symbol Value Unit v CEO -4 0 Vdc Collector-Base Voltage VCBO -4 0 Vdc Em itter-B ase V o ltage v EBO - 5 .0 Vdc 'c -2 0 0 m A dc Symbol M ax Unit PD 225 mW 1.8 mW/°C R& ja 556 °C/W PD 300 mW 2.4 mwrc Rö j a 417 °C/W T j. Tstg
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MMBT3906LT1*
OT-23
O-236AB)
2N390S
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RA TIN G S EACH DIODE Rating Unit Sym bol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc •FM(surae) 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mwrc RflJA 556 x /w Pd 300 mW 2,4 mwrc 3 RflJA 417 °C/W Cathode Tj. Tstq - 55 to +150
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MMBD6100LT1
OT-23
O-236AB)
12bJC
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amplifier se592
Abstract: No abstract text available
Text: SE592, NE592, NE592A DIFFERENTIAL VIDEO AMPLIFIERS D2667, FEBRUARY 1 9 8 4 -R E V ISE D FEBRUARY 1988 • 90-MHz Bandwidth NE592, N E592A . . . D O R N P A C K A G E SE592 . . . J P A C K A G E • Adjustable Gain to 400 TOP VIEW • No Frequency Compensation Required
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SE592,
NE592,
NE592A
D2667,
90-MHz
SE592
NE592
E592A
amplifier se592
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mc3487
Abstract: D2578 D2678
Text: MC3487 QUAD DIFFERENTIAL LINE DRIVER WITH 3-STATE OUTPUTS SLLS098 - D2578, MAY 1980 - REVISED SEPTEMBER 1986 Meets EIA Standard RS-422-A and Federal Standard 1020 D, J, OR N PACKAGE TOP VIEW 3-State, TTL-Compatible Outputs 1A [ 1Y[ Fast Transition Times
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MC3487
SLLS098
D2578,
RS-422-A
MC3487
1N916
1N3064.
D2578
D2678
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Untitled
Abstract: No abstract text available
Text: SN65ALS180, SN75ALS180 DIFFERENTIAL DRIVER AND RECEIVER PAIRS D3043, AUGUST 1987 - • • • Low Skew between Devices . . . 6 ns Max • Low Supply Current Requirements 30 mA Max • Individual Driver and Receiver I/O pins with Dual Vcc arid Dual GND C 2
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SN65ALS180,
SN75ALS180
D3043,
RS-422-A
RS-485
25-MBaud
SN65ALS180
SN75ALS180
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Untitled
Abstract: No abstract text available
Text: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES * High Current Transfer Ratios, lF=1 mA, IL 221,100% Minimum IL222, 200% Minimum IL223, 500% Minimum * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to
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IL221/222/223
IL222,
IL223,
RS481
E52744
fl235bOS
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NZT6715
Abstract: TN6715A
Text: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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TN6715A
O-226
NZT6715
OT-223
b501130
0Cm07Sb
b5D1130
NZT6715
TN6715A
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Untitled
Abstract: No abstract text available
Text: _ PHOTO TRANSISTOR MARKTECH IN TER N ATI O NA L IfiC D • STTUSS 00003^ 4 m MTD6160 SILICON NPN EPITAXIAL PLANER APPLICATIONS • O P T IC A L S W IT C H • TA P E , C A R D R E A D E R S • P O S IT IO N S E N S O R • ENCODERS FEATURES • Spectrally and M echanically M atched with IR
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MTD6160
MTE1090
MTE1130
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MP4TD0600
Abstract: MP4TD0600G MP4TD0600W MP4TD0800 Q 609 lim ml 741 c Chnq
Text: M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD0600 Chip Outline Drawing1-2.3,4 Features • Cascadable 50Q Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain @ 0.5 GHz • Unconditionally Stable k>1 • Low Voltage Operation
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MP4TD0600
MP4TD0600
MP4TD0600G
MP4TD0600W
MP4TD0800
Q 609 lim
ml 741 c
Chnq
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Untitled
Abstract: No abstract text available
Text: Advance Information This docum ent contains inform ation on a product under developm ent. The param etric inform ation are target values and are subject to change. Distinguishing Features • • • • • • • T w o Independent Pin E lectronics Drivers
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Bt698
28-pin
Bt698
Bt622/24
Bt681
Bt687
Bt688
Bt692_
Bt692KHJ
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SN751167
Abstract: mc34051 IC equivalent ic
Text: SN65C1167, SN65C1168, SN75C1167, SN75C1168 DUAL DIFFERENTIAL DRIVERS AND RECEIVERS SLLS159 - D4062, MARCH 1993 Meets EIA Standards RS-422-A and CCITT Recommendation V.11 SN65C1167 . . . D Bt, N, OR N S t PACKAGE TOP VIEW BiCMOS Process Technology 1B[ Low Supply Current Requirements
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SN65C1167,
SN65C1168,
SN75C1167,
SN75C1168
SLLS159
D4062,
RS-422-A
SN751167
MC34050
MC34051
mc34051 IC equivalent ic
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Smd code S08
Abstract: smd diode schottky code marking 2F
Text: International pd-9.i 4i 2C IwR Rectifier preliminary IR F 7 4 2 2 D 2 FETKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint a rrr-
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intel 80286 pin function
Abstract: MB4-200
Text: in te * 82C288 BUS CONTROLLER FOR 80286 PROCESSORS 82C288-12, 82C288-10, 82C288-8 • P rovides Com m ands and Controls for Local and System Bus ■ W ide Flexibility In System C onfigurations ■ High Speed CHMOS III Technology ■ Fully Static D evice
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82C288
82C288-12,
82C288-10,
82C288-8)
20-pin
82C288
intel 80286 pin function
MB4-200
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MPSA18
Abstract: MPSA18 equivalent
Text: MPSA18* MAXIM UM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage CASE 29-04, STYLE 1 TO-92 TO-226AA Ve b O 6.5 Vdc Collector Current — Continuous 'C 200 mAdc Total Device Dissipation @ Ta = 25°C
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MPSA18*
O-226AA)
MPSA18
MPSA18 equivalent
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