Untitled
Abstract: No abstract text available
Text: 3 * HALF BRIDGE CONTROLLER FOR SYSTEM OPTIMIZATION E523.01B/02B/11B/12B ADVANCE PRODUCT INFORMATION - SEP 20, 2012 General Description Features ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ ÿ Precise, dynamical dead-time generation IC supply voltage range 7 to 28V peak 42V
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01B/02B/11B/12B
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TRANSISTOR si 6822
Abstract: QSOP-44 elmos 100 ELMOS Semiconductor
Text: 3 * Half Bridge Controller for System Optimization E523.01B, 02B, 11B, 12B ADVANCE PRODUCT INFORMATION – Mar. 20, 2013 Features • • • • • • • • • • • • • • Applications Dead-time generation dynamical change via SPI IC supply voltage range 7 to 28V (peak 42V)
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25DS0006E
TRANSISTOR si 6822
QSOP-44
elmos 100
ELMOS Semiconductor
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transistor 2xw
Abstract: 38GHz T485B S11 INFINEON
Text: T485B_LNA GaAs 38 GHz Low Noise Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 40 GHz • Noise figure < 4.5 dB • Gain > 14 dB • P-1dB > 12 dBm, Psat > 15 dBm
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QS9000
ISO9001
transistor 2xw
38GHz
T485B
S11 INFINEON
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pseudomorphic HEMT
Abstract: 38GHz T485B
Text: T485B_MPA_1 GaAs 38 GHz Medium Power Amplifier MMIC • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 13 dB • P-1dB > 17 dBm • Psat > 19 dBm chip size: 1,1 mm x 1,9 mm
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QS9000
ISO9001
pseudomorphic HEMT
38GHz
T485B
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vco mmic
Abstract: pseudomorphic HEMT T485B T485A transistor 2xw
Text: T485B_VCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier InGaAs/AlGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz
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QS9000
ISO9001
vco mmic
pseudomorphic HEMT
T485B
T485A
transistor 2xw
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Infineon Design Link
Abstract: No abstract text available
Text: T458B_PA 17 – 24 GHz GaAs Power Amplifier/Driver MMIC • 4 Stage Monolithic Microwave Integrated Circuit MMIC Amplifier • Input/Output matched (incl. bond wires) • Frequency range: 17 GHz to 24 GHz • High Isolation > 50 dB • Gain > 22 dB • P-1dB > 23 dBm, Psat > 24 dBm
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QS9000
ISO9001
Infineon Design Link
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transistor 2xw
Abstract: 38GHz T485B S11 INFINEON power transistor gaas
Text: T485B_MPA_2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P-1dB > 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm
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38GHz
QS9000
ISO9001
transistor 2xw
T485B
S11 INFINEON
power transistor gaas
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Infineon technology roadmap for mosfet
Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.
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B191-H7496-G1-X-7600
Infineon technology roadmap for mosfet
germanium transistor pnp smd
smd mosfet sot-363
microwave transistor siemens bfp 420
varactor flip chip
radar 77 ghz sige
Infineon automotive semiconductor technology roadmap
transistor SMD DK qs
siemens spc 2
SiGe PNP transistor
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Untitled
Abstract: No abstract text available
Text: W8 3 7 92 AD/D W83792AG /G Winbond H/W Monitoring IC CSB Version Date :2005 Nov. Revision: 0.9 W83792AD/AG/D/G PRELIMINARY W83792AD/D Data Sheet Revision History Pages Dates Version Web Version Main Contents 1 Aug-27-2003 N/A Move Low Bit I/II to AEh and AFh
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W83792AG
W83792AD/AG/D/G
W83792AD/D
Aug-27-2003
Sep-12-2003
Sep-16-2003
Nov-06-2003
Jan-05-2004
W83792D
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6r3k3c6
Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R3K3C6
6r3k3c6
transistor SMD MARKING CODE 772
IPD60R3K3C6
TRANSISTOR SMD MARKING CODE 42
JESD22
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6r070c6
Abstract: IPW60R070C6 IF-258 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description
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IPW60R070C6
6r070c6
IPW60R070C6
IF-258
JESD22
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6r1k4c6
Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R1K4C6
6r1k4c6
IPD60R1K4C6
smd diode EG - 413
Diode SMD SJ 94
Diode SMD SJ 98
JESD22
MOSFET TRANSISTOR SMD MARKING CODE 11
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6r070c6
Abstract: 6R070C6 MOSFET TRANSISTOR
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description
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IPW60R070C6
6r070c6
6R070C6 MOSFET TRANSISTOR
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6r2k0c6
Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R2K0C6
6r2k0c6
IPD60R2K0C6
g1 TRANSISTOR SMD MARKING CODE
JESD22
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2sk1793
Abstract: TO220ABs K1793 ctm 2s 2SK1793-Z
Text: A ia S iiE c • MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 7 9 3 , 1 7 9 3 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PA C K AG E DIM ENSIONS T h e 2S K 1793 is N -channel M O S Field Effect Transistor de in m itiimeters signed fo r high v o ltag e sw itch in g applications.
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2SK1793
IHI-1209)
1793-Z
2sk1793
TO220ABs
K1793
ctm 2s
2SK1793-Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC ELECTRON DEVICE _ / / MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACK AG E D IM E N S IO N S U nit : mm The 2SK1399 is an N-channe! vertical type MOS FET which can be driven by 2.5 V power supply.
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2SK1399
2SK1399
1EI-616)
IR30-00
WS60-0G
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2N7075
Abstract: 100-C
Text: Tem ic 2N7075 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VnsiV 100 r D S « n ) ( ß ) 0.065 I d (A) 30 TO -2S4A A H erm etic P ack ag e D o Case Isolated D S G Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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2N7075
100-C
S5M735
2N7075_
P-36736â
SSM735
100-C
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Untitled
Abstract: No abstract text available
Text: KSC2755 NPN EPITAXIAL SILICON TRANSISTOR RF AMP, FOR VHF TV TUNER S O T-23 . LOW NF, HIGH Gpe . FO RW ARD AG C C A PABILIT Y T o 30 dB • N F=2.0dB Typ. G pe=23dB Typ. f=200M Hz ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage
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KSC2755
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transistor 9567
Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
Text: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF521
OT172D
OT172D
transistor 9567
271 Ceramic Disc Capacitors
72741
i 72741
BLF521
IEC134
JLF521
9567 transistor
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k 3683 transistor
Abstract: transistor B 1184 transistor k 3683 CF940 OJS-OO transistor 3683 telefunken ta 250
Text: TELEFUNKEN ELECTRONIC Û1C D • fi^EQD^b 0DGS3RQ ^ ■ ALG6 CF 940 Marked with: CF 6 M electronic Creative Technologies T 3 - - / - N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G H z in com m on Gate 1 configuration;
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gs 1117 ax
Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance m entm ode matched M O SFET transistor arrays intended fo r a broad range
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ALD1107/ALD1117
1107/ALD
107/A
ALD1106
ALD1106
1107/A
ALD1101
LD1102
LD1103)
gs 1117 ax
1117 S Transistor
Transistor b 1117
c 1117
ald 1106
LD1103
ic 1117
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TA7766AF
Abstract: 225kHz FM TA7765AF
Text: TOSHIBA TA7765AF TO SHIBA BIPOLAR LINEAR IN TEGRATED CIRCUIT SILICON M ONOLITHIC TA7765AF AM/FM IF SYSTEM 1.5V USE The TA7765AF is an A M /FM IF system IC designed for low voltage operation (1.5V), w hich is especially suitable for a stereo headphone radio and a radio cassette
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TA7765AF
TA7765AF
MOD-30%
60dB//V
SSOP16-P-225-1
TA7766AF
225kHz FM
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60N03
Abstract: 60N035
Text: KF17117A-5 6 0 N 0 3 5 N -Channel Field Effect Transistor Preliminary June 2001 General Description These n-channel power field effect transistors are produced using high cell density D M O S technology. These devices are particularly suited for low voltage applications such as automotive and other battery
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KF17117A-5
60N035)
O-220
60N03
60N035
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Untitled
Abstract: No abstract text available
Text: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING TO -126 • Complement to KSD882 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage C haracteristic VcBO -4 0 V Collector- Emitter Voltage VcEO - 30 V Emitter- Base Voltage
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KSB772
KSD882
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