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    TO220ABS Search Results

    TO220ABS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    HAF2014 Renesas Electronics Corporation Thermal Shut Down Functioned MOSFET, TO220AB, /Tube Visit Renesas Electronics Corporation
    HAF1001 Renesas Electronics Corporation Silicon P Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
    HAF2001 Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
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    TO220ABS Price and Stock

    PanJit Semiconductor MBR30100CT-T0-00001

    Schottky Diodes & Rectifiers TO-220AB/SKY/TO/MBR-300CTWH
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    TTI MBR30100CT-T0-00001 Tube 1,500
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    PanJit Semiconductor MBR10100CT-T0-00001

    Schottky Diodes & Rectifiers TO-220AB/SKY/TO/MBR-100CTWH
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    TTI MBR10100CT-T0-00001 Tube 1,500
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    PanJit Semiconductor MBR10100FCT-T0-00001

    Schottky Diodes & Rectifiers ITO-220AB/SKY/TO/MBR-100FCTWH
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    TTI MBR10100FCT-T0-00001 Tube 1,500
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    PanJit Semiconductor MBR10150CT-T0-00001

    Schottky Diodes & Rectifiers TO-220AB/SKY/TO/MBR-100CTWH
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    TTI MBR10150CT-T0-00001 Tube 1,500
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    PanJit Semiconductor MBR10150FCT-T0-00001

    Schottky Diodes & Rectifiers ITO-220AB/SKY/TO/MBR-100FCTWH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI MBR10150FCT-T0-00001 Tube 1,500
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    Find more TO220ABS price and stock on Findchips.com

    TO220ABS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A


    Original     		PDF CR12CM-12A R07DS1035EJ0400 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR8CM-12A R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 600V - 8A - Thyristor Medium Power Use Features • IT AV : 8 A • VDRM : 600 V • IGT : 15 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A


    Original     		PDF CR8CM-12A R07DS1034EJ0300 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0602DPN-E0 O-220AB R07DS0653EJ0200 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0701DPN-E0 R07DS0622EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 75 V, 100 A, 3.8 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.0 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0701DPN-E0 O-220AB R07DS0622EJ0200 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0603DPN-E0 O-220AB R07DS0654EJ0200 PRSS0004AG-A O-220AB)

    RJK1001DPN-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1001DPN-E0 R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 100 V, 80 A, 5.5 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.4 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK1001DPN-E0 O-220AB R07DS0619EJ0200 PRSS0004AG-A O-220AB) RJK1001DPN-E0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR12CM-12B 600V - 12A - Thyristor R07DS0232EJ0200 Rev.2.00 Feb 25, 2013 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type


    Original     		PDF CR12CM-12B R07DS0232EJ0200 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR6CM-12LB 600V - 6A - Triac R07DS1027EJ0100 Rev.1.00 Feb 25, 2013 Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT RMS : 6 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline


    Original     		PDF BCR6CM-12LB R07DS1027EJ0100 PRSS0004AG-A O-220AB)

    BCR16CM16LH1J6

    Abstract: BCR16CM-16LH-1J6
    Text: Preliminary Datasheet BCR16CM-16LH 800V - 16A - Triac Medium Power Use R07DS0420EJ0200 Rev.2.00 Feb 25, 2013 Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 16 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)


    Original     		PDF BCR16CM-16LH R07DS0420EJ0200 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220) BCR16CM16LH1J6 BCR16CM-16LH-1J6

    BCR10CM-12LB

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR10CM-12LB R07DS1029EJ0400 Previous: REJ03G0455-0300 Rev.4.00 Feb 25, 2013 600V - 10A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 10 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6


    Original     		PDF BCR10CM-12LB R07DS1029EJ0400 REJ03G0455-0300) PRSS0004AG-A O-220AB) PRSS0004AA-A O-220) BCR10CM-12LB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR16CM-12LB R07DS1032EJ0400 Previous: REJ03G0457-0300 Rev.4.00 Feb 25, 2013 600V - 16A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 16 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6


    Original     		PDF BCR16CM-12LB R07DS1032EJ0400 REJ03G0457-0300) PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline


    Original     		PDF BCR5CM-12RA R07DS1149EJ0100 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR6CM-12A 600V - 6A - Thyristor R07DS1033EJ0300 Rev.3.00 Jul 30, 2013 Medium Power Use Features • IT AV : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A


    Original     		PDF CR6CM-12A R07DS1033EJ0300 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features •    High speed switching Low drive current Low on-resistance RDS on = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0601DPN-E0 O-220AB R07DS0652EJ0200 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR10CM-16LH 800V - 10A - Triac Medium Power Use R07DS0320EJ0200 Rev.2.00 Feb 25, 2013 Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 10 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)


    Original     		PDF BCR10CM-16LH R07DS0320EJ0200 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    BCR12CM

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR12CM-16LH R07DS0261EJ0200 Rev.2.00 Feb 25, 2013 800V - 12A - Triac Medium Power Use Features •     The Product guaranteed maximum junction temperature 150C  Planar Type IT RMS : 12 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)


    Original     		PDF BCR12CM-16LH R07DS0261EJ0200 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220) BCR12CM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR6CM-12A R07DS1033EJ0200 Previous: REJ03G1706-0100 Rev.2.00 Feb 25, 2013 600V - 6A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA Outline


    Original     		PDF CR6CM-12A R07DS1033EJ0200 REJ03G1706-0100) PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    BCR6CM-12RA

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline


    Original     		PDF BCR6CM-12RA R07DS1150EJ0100 PRSS0004AG-A O-220AB) BCR6CM-12RA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type


    Original     		PDF CR12CM-12B R07DS0232EJ0300 PRSS0004AG-A O-220AB) PRSS0004AA-A O-220)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR30CM-8LB R07DS1105EJ0100 Rev.1.00 Aug 08, 2013 400V-30A-Triac Medium Power Use Features • IT RMS : 30 A • VDRM : 400 V • IFGT I, IRGT I, IRGT III : 30 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type Outline


    Original     		PDF BCR30CM-8LB R07DS1105EJ0100 00V-30A-Triac PRSS0004AG-A O-220AB)

    PRSS0004AG-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0702DPN-E0 R07DS0623EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 75 V, 90 A, 4.8 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.9 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK0702DPN-E0 O-220AB R07DS0623EJ0200 PRSS0004AG-A O-220AB) PRSS0004AG-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1002DPN-E0 R07DS0620EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 100 V, 70 A, 7.6 m Features •    High speed switching Low drive current Low on-resistance RDS on = 6.0 m typ. (at VGS = 10 V) Package TO-220AB Outline


    Original     		PDF RJK1002DPN-E0 O-220AB R07DS0620EJ0200 PRSS0004AG-A O-220AB)

    BCR12CM

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR12CM-12LB R07DS1030EJ0400 Previous: REJ03G0456-0300 Rev.4.00 Feb 25, 2013 600V - 12A - Triac Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6


    Original     		PDF BCR12CM-12LB R07DS1030EJ0400 REJ03G0456-0300) PRSS0004AG-A O-220AB) PRSS0004AA-A O-220) BCR12CM

    2sk1793

    Abstract: TO220ABs K1793 ctm 2s 2SK1793-Z
    Text: A ia S iiE c • MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 7 9 3 , 1 7 9 3 -Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PA C K AG E DIM ENSIONS T h e 2S K 1793 is N -channel M O S Field Effect Transistor de­ in m itiimeters signed fo r high v o ltag e sw itch in g applications.


    OCR Scan     		PDF 2SK1793 IHI-1209) 1793-Z 2sk1793 TO220ABs K1793 ctm 2s 2SK1793-Z