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    TRANSISTOR AF 178 Search Results

    TRANSISTOR AF 178 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AF 178 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 102

    Abstract: No abstract text available
    Text: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage


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    PDF BC856AW-G BC858CW-G BC856W= BC857W= BC858W= OT-323 OT-323, MIL-STD-750, QW-BTR36 BC856AW-G transistor 102

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage


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    PDF BC856AW-G BC858CW-G BC856W= BC857W= BC858W= OT-323 OT-323, MIL-STD-750, BC856AW-G BC857AW-G

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A


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    PDF BC856W= BC857W= BC858W= BC856AW-G BC858CW-G OT-323 OT-323, MIL-STD-750, QW-BTR36 SMD TRANSISTOR MARKING 5c smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B

    1650P

    Abstract: 2SC4548 TR MJE 350 1500P 4500M
    Text: 2SC4548 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 230.0f NF 1 IKF 17.00m NE 2 NR 1 IKR 45.00m NC 2 IRB 200.0m RE 78.00m XTB 3 XTI 3 VJE 680.0m TF 2.5n VTF 100 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


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    PDF 2SC4548 1650P 2SC4548 TR MJE 350 1500P 4500M

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


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    PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    POE-15

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
    Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP


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    PDF PH1819-15N POE-15 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


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    PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


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    PDF A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1

    Q62702-D1070

    Abstract: TRANSISTOR D 1785 BD430
    Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    PDF T-33-/7 Q62702-D1070 fl23Sb05 Q0043b2 BD430 Q62702-D1070 TRANSISTOR D 1785 BD430

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    transistor cq 529

    Abstract: transistor CQ 548 npn 557 sot143 chip die npn transistor ma4t856 transistor L44
    Text: AfÓS r: M an A M P com pany Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Features Package Outline • High Output Power - 16 dBm PidB @ 1 GH z - 10 dBm PidB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz f r • High Power Gain


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    PDF MA4T856 OT-23 OT-143 transistor cq 529 transistor CQ 548 npn 557 sot143 chip die npn transistor transistor L44

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    PDF

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    Untitled

    Abstract: No abstract text available
    Text: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP


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    PDF PH1819-4N

    BC 179

    Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
    Text: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case


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    PDF 023SbOS --------------------------------BC179 62702-C Q62702-C141 62702-C142 Q62702-C685 62702-C153 62702-C154 62702-C686 BC 179 transistor af 178 BC179 BC178B TI-5045 BC179E C154 TRANSISTOR BC 177 transistor

    Untitled

    Abstract: No abstract text available
    Text: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A


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    PDF SL6610 470MHz. SL6609A 37bfl522 0Q23172

    transistor ECG 152

    Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application


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    PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ECG 152 Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041

    transistor ecg36

    Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo


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    PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180

    BEL 100N TRANSISTOR PIN DIAGRAM

    Abstract: hs 8109 IC HS 8109
    Text: 9K GEC PLESSEY J U L Y 1995 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4 0 1 5 - 2 5 SL6609A DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609 receiver and is a pin for pin product upgrade. The device


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    PDF SL6609A 470MHz. SL6609 BEL 100N TRANSISTOR PIN DIAGRAM hs 8109 IC HS 8109

    ds4003 diode

    Abstract: DS4003 Green LED LT 620 of seoul semiconductor 7597 lt transistor
    Text: SL6610 M ITEL Direct Conversion FSK Data Receiver Advance Information SE M IC O N D U C T O R Supersedes the O ctober 1994 edition, DS4003 - 1.4 DS4003 - 2.2 This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A


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    PDF DS4003 SL6610 470MHz. SL6609A ds4003 diode Green LED LT 620 of seoul semiconductor 7597 lt transistor

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


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    PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09