Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A64 Search Results

    TRANSISTOR A64 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


    Original     		PDF -100mA -10mA Mar-97

    2907A

    Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
    Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E


    Original     		PDF Q68000-A6474 VPS05161 OT-23 Jan-22-1999 2907/A EHP00754 2907A 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474

    CE040

    Abstract: Q6800-A6477
    Text: NPN Silicon AF Transistor SMBTA 20 High DC current gain ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol Values


    Original     		PDF Q6800-A6477 OT-23 CE040 Q6800-A6477

    TRANSISTOR A64

    Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
    Text: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6486 SGA-6486 DC-4500 EDS-100615 TRANSISTOR A64 RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking A64 marking amplifier marking A64 amplifier

    RF TRANSISTOR 1.5 GHZ A64

    Abstract: MMIC A64 marking A64 marking amplifier
    Text: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6486 EDS-100615 RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking A64 marking amplifier

    RF TRANSISTOR 1.5 GHZ A64

    Abstract: TRANSISTOR A64 A64 marking amplifier MMIC A64 marking SGA-6489 marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64
    Text: Product Description Stanford Microdevices’ SGA-6489 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6489 SGA-6489 DC-3500 EDS-100621 RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 A64 marking amplifier MMIC A64 marking marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64

    Silicon Bipolar Amplifier A64

    Abstract: CATV amplifier transistor SGA-6489 RF TRANSISTOR A64
    Text: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to


    Original     		PDF SGA-6489 50-ohm SGA-6489 DC-3300 EDS-100621 Silicon Bipolar Amplifier A64 CATV amplifier transistor RF TRANSISTOR A64

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


    OCR Scan     		PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN

    SOT223 marking SG

    Abstract: MARKING SG SOT223 marking sot223 GY
    Text: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN


    OCR Scan     		PDF PZT4403 PZT4403 OT223 PZT4401. ZT4403 OT223) 15002/00/01/pp8 SOT223 marking SG MARKING SG SOT223 marking sot223 GY

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B


    OCR Scan     		PDF Q68000-A6481 OT-23 EHN0005 EHN00056 10CK2, Jan-22-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222a sot23 2222A transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package


    OCR Scan     		PDF Q68000-A6482 OT-23 Jan-22-1999

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B


    OCR Scan     		PDF Q68000-A6481 OT-23 Jan-22-1999

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


    OCR Scan     		PDF Q68000-A6479 OT-23 Jan-22-1999 100MHz EHP00879

    2907a TRANSISTOR PNP

    Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474


    OCR Scan     		PDF Q68000-A6474 OT-23 Jan-22-1999 EHPGQ751 2907a TRANSISTOR PNP 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol


    OCR Scan     		PDF Q6800-A6477 OT-23 fi235b05 012250e fl235b05

    TRANSISTOR S2d

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


    OCR Scan     		PDF Q68000-A6479 OT-23 Jan-22-1999 100MHz TRANSISTOR S2d

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474


    OCR Scan     		PDF 68000-A6474 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E


    OCR Scan     		PDF 68000-A6482 OT-23 Jan-22-1999 P00839

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification 2PC4617 NPN general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN


    OCR Scan     		PDF 2PC4617 SC-75 2PA1774. MAM34S 4617Q 4617R 4617S 115002/00/03/pp8

    TRANSISTOR A64

    Abstract: MMBT pnp
    Text: MPS A64/MPSW64/MMBT A64 2 3 National Semiconductor MPSW64 MPSA64 MMBTA64 TO- 9 2 T L / G /1 0 1 0 Q - 5 T L / G /1 0 1 0 0 - 1 PNP Darlington Transistor Electrical Characteristics T * = 25‘ C unless otherw ise noted Param eter Sym bol Min Max Units OFF C HA R A C TER ISTIC S


    OCR Scan     		PDF A64/MPSW64/MMBT MPSA64 MPSW64 MMBTA64 100fxA TRANSISTOR A64 MMBT pnp

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2


    OCR Scan     		PDF PDTC143TT 115002/00/02/pp8

    TRANSISTOR A64

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZK FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 and 47 k£2


    OCR Scan     		PDF PDTC143ZK SC-59; OT346) SC-59 PDTA143ZK. 115002/00/03/pp8 TRANSISTOR A64

    SGA-6486-TR1

    Abstract: sga6486
    Text: Product Description SGA-6486 Stanford M icrodevices’ SG A-6486 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to


    OCR Scan     		PDF 50-ohm SGA-6486 DC-1800 SGA-6486-TR1 sga6486