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    TRANSISTOR A4I Search Results

    TRANSISTOR A4I Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A4I Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK438W-800A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK438W-800A/B BUK438 -800A -800B OT429 T0247) BUK438W-800A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK464-60H SQT404

    ss 297 transistor

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to


    OCR Scan     		PDF BU2525DF 1E-06 1E-02 ss 297 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2525DW IE-02 1E-04

    TRANSISTOR BU2525DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to


    OCR Scan     		PDF BU2525DF 100-PC 1E-06 1E-04 1E-02 TRANSISTOR BU2525DF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2525DW 1E-04 1E-02 1E-06

    UMW13N

    Abstract: FMW13 T148 T149
    Text: h Transistors UM W13 N/FMW 13 î — h 7 > v ^ ^ / D u a l Mini-Mold Transistor x h î $ * V 7 J l ' 7 l s - t B N P N y ‘j 3 > h ÿ > y Z $ Epitaxai Pianar NPN Silicon Transistor ¡S lâ tiH iffl/R F Amplifier • £fîfé\ri*0/D im en sio n $ Unit : mm


    OCR Scan     		PDF W13N/FMW13 UMW13N FMW13 UMW13N SC-70) SC-59) UMW13N/FMW13 FMW13 T148 T149

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor

    VPT05155

    Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
    Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF VPT05155 O-220 C67078-S1321-A2 VPT05155 buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output


    OCR Scan     		PDF MHPM7B12A120A/D MHPM7B12A120A

    transistor sb 772

    Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
    Text: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",


    OCR Scan     		PDF 2SK1853 transistor sb 772 TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94

    221A-06

    Abstract: AN569 MTP8N50E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to


    OCR Scan     		PDF

    BC 939 Transistor Data

    Abstract: MJ4647 MJ4646
    Text: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli­


    OCR Scan     		PDF b3b75S4 MJ4646 MI4647 BC 939 Transistor Data MJ4647

    DG41

    Abstract: No abstract text available
    Text: 1 9 -47 28 : R ev 2 :8 / 9 5 I m p r o v e d , Quad, SPST A n a l o g S w i t c h e s Description New Features ♦ Plug-In Upgrade fo r Industry-Standard DG411/DG412/DG413 ♦ Improved ros ON Match Between Channels (3& max) ♦ Guaranteed r F L A T ( O N ) Over Signal Range (A4ii)


    OCR Scan     		PDF DG411/DG412/DG413 411/DG412/DG41 16-PIN DG41

    mosfet 600V 50A

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON Ä 7# M ûœ ËŒ O T «® S T T A 9 0 1 2 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 45A I f (a v ) V (typ) 65ns Vf (max) 1.85V K2 A2 K1 A1 A2 Kl IE O 1200V rrm trr PRELIM IN ARY DATA


    OCR Scan     		PDF STTA9012T mosfet 600V 50A

    SE 442

    Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
    Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­


    OCR Scan     		PDF MlL-S-19500/99E L-S-19500/99D 2N696 2N697 500/99D. SE 442 MARKING M1W TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent

    3 phase igbt INVERTER ac motor

    Abstract: 7b15a
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 7B 15A 60A integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


    OCR Scan     		PDF MHPM7A10E60DC3) HPM7B15A60A 3 phase igbt INVERTER ac motor 7b15a

    g50n

    Abstract: No abstract text available
    Text: STD12NE06L N - CHANNEL 60V - 0.08 Q - 12 A - DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss S T D 12N E 06L 60 V Id RDS on < 0.12 Q 12 A . TYPICAL F b s (o n ) = 0.09 Ü . EXCEPTIONALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 1 0 0 % AVALANCHE TESTED


    OCR Scan     		PDF STD12NE06L g50n

    ICL8062

    Abstract: LED Driver add 5201 camera 24 pin ICL8061 ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera
    Text: ICL8061/8062 Camera Exposure Control Circuits FEATURES • 50pA to 500/iA photocell current range • Low power dissipation • Track & hold ckt for mirror-up or exposure memory use. • Direct linearized inputs for aperture values, sensitivity, manual shutter speed, etc.


    OCR Scan     		PDF ICL8061/8062 500/iA ICL8061 8061/D ICL8062 LED Driver add 5201 camera 24 pin ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera

    stepping motor EPSON EM - 234

    Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
    Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		PDF RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A

    3x4 matrix keypad

    Abstract: mk5089 keypad 3x4 pin configuration keypad 3x4 8 pin configuration mk5089 DTMF circuit diagram of keypad interface with dtmf Mostek MK5089 keypad 3x4 Mostek MK5380 12 key 3x4 KEYPAD 14 pin
    Text: iS THOMSON COMPONENTS MOSTEK DATA SHEET COMMUNICATIONS PRODUCTS 10-NUMBER REPERTORY TONE/ PULSE DIALER MK5376 FEATURES □ Converts push-button inputs to both DTMF and pulse signals □ Stores ten 16-digit telephone num bers including last num ber dialed V-


    OCR Scan     		PDF 10-NUMBER MK5376 16-digit 13KEY 3x4 matrix keypad mk5089 keypad 3x4 pin configuration keypad 3x4 8 pin configuration mk5089 DTMF circuit diagram of keypad interface with dtmf Mostek MK5089 keypad 3x4 Mostek MK5380 12 key 3x4 KEYPAD 14 pin

    ygc 801

    Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
    Text: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/569 2N6966, 2N6967, 2N6968, 2N6969 MIL-S-19500. T0-213AA. ygc 801 chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6968 yx 801 ic DIODE dla 9-F

    68hc68r2

    Abstract: 68hc68 3771 80C51 CDP68HC05C4 CDP68HC05C8 CDP68HC05D2 CDP68HC68R1 CDP68HC68R2
    Text: 33 C D P 68H C 68R 1 H a rris CD P 6 8 HC68R2 C M O S 1 2 8 W o rd C D P 6 8 H C 6 8 R 1 and 2 5 6 W o rd (C D P 6 8 H C 6 8 R 2 ) by 8 -B it S tatic RAMs J a n u a ry 1991 P in o u t F e a tu re s • PACKAGE TYPE E TOP VIEW Fully S tatic O p eratio n


    OCR Scan     		PDF cdp68hc68r1 CDP68HC68R2 CDP68HC68R1) CDP68HC68R2) CDP68HC68R1 CDP68HC68R2 CDP68HC68R1, 92CS-377I4 68hc68r2 68hc68 3771 80C51 CDP68HC05C4 CDP68HC05C8 CDP68HC05D2

    M3P1

    Abstract: KD 2107 X3032
    Text: XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families £ Product Description Features • Complete XACT Development System - Schematic capture, automatic place and route - Logic and timing simulation - Interactive design editor for design optimization


    OCR Scan     		PDF XC3000, XC3000A, XC3000L, XC3100, XC3100A XC3100A M3P1 KD 2107 X3032