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    TRANSISTOR A209 Search Results

    TRANSISTOR A209 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A209 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and


    Original     		2SA2093 -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880 PDF

    A2093

    Abstract: 2SA2093
    Text: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		2SA2093 200mV 2SC5880 A2093 R1120A A2093 2SA2093 PDF

    transistor A2097

    Abstract: 2SA2097 A2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 transistor A2097 2SA2097 A2097 PDF

    transistor A2097

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 transistor A2097 PDF

    2SA2097

    Abstract: transistor pnp a110
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 2SA2097 transistor pnp a110 PDF

    A2097

    Abstract: transistor A2097 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 SC-64 A2097 transistor A2097 2SA2097 PDF

    transistor A2097

    Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 SC-64 transistor A2097 A2097 2SA2097 2SA20 transistor 2SA2097 PDF

    transistor A2097

    Abstract: A2097 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 transistor A2097 A2097 2SA2097 PDF

    transistor A2097

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 SC-64 transistor A2097 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		2SA2097 PDF

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)


    Original     		2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880 PDF

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)


    Original     		2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880 PDF

    2SC5879S

    Abstract: 2sc5879 2SA2091S SC-72 a2091
    Text: 2SA2091S Transistors Medium power transistor −60V, −1A 2SA2091S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −0.5A, IB = −50mA)


    Original     		2SA2091S SC-72) 15Min. -200mV -50mA) 2SC5879S A2091S 2SC5879S 2sc5879 2SA2091S SC-72 a2091 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features


    Original     		2SA2096 SC-63) OT-428> 200mV 2SC5881 A2096 PDF

    2sa2097

    Abstract: transistor A2097 A2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)


    Original     		2SA2097 2sa2097 transistor A2097 A2097 PDF

    A2096

    Abstract: 2SA2096 2SC5881
    Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 zExternal dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 zFeatures


    Original     		2SA2096 SC-63) OT-428> -200mV 2SC5881 A2096 A2096 2SA2096 2SC5881 PDF

    a2096

    Abstract: 2SA2096 2SC5881
    Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features


    Original     		2SA2096 SC-63) OT-428> -200mV 2SC5881 A2096 a2096 2SA2096 2SC5881 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    1N4148 SOD-123

    Abstract: conn SIL2 tp1 conn sil2 4-pole bldc sensorless 12v dc brushless motor Infineon - Brushless DC Motor 24v dc motor drive circuit diagram SPEED CONTROL of DC MOTOR using 3 phase bridge co dc motor driver MANUAL 3 phase ac Induction motor h bridge dc motor speed control HISTORY
    Text: User’s Manual, V 1.0, June 2003 Motor Control Development Kit A reference design for low voltage 3-phase AC induction and brushless DC motor control. Microcontrollers N e v e r s t o p t h i n k i n g . Motor Control Development Kit Revision History:2003-06 V 1.0


    Original     		upload/documents/048/247/ TLE6280GP upload/documents/014/220/TLE6280GP feeTLE4274GS P-SOT223-4-1 LM6132AIM P-DSO36-12 MAX3221E TSSOP16 1N4148 SOD-123 conn SIL2 tp1 conn sil2 4-pole bldc sensorless 12v dc brushless motor Infineon - Brushless DC Motor 24v dc motor drive circuit diagram SPEED CONTROL of DC MOTOR using 3 phase bridge co dc motor driver MANUAL 3 phase ac Induction motor h bridge dc motor speed control HISTORY PDF

    MIC710

    Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
    Text: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes


    OCR Scan     		110-E77-20. MIC710 XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107 PDF

    mdu 2653

    Abstract: mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152
    Text: DATASHEET RapidChip Integrator Platform ASIC Family February 2005 Preliminary DB08-000237-03 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the


    Original     		DB08-000237-03 DB08-000237-03, 1152-Ball mdu 2653 mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152 PDF