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    2SA2097 Search Results

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    2SA2097 Price and Stock

    Toshiba America Electronic Components 2SA2097(TE16L1,NQ)

    TRANS PNP 50V 5A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA2097(TE16L1,NQ) Digi-Reel 1,877 1
    • 1 $1.17
    • 10 $0.735
    • 100 $1.17
    • 1000 $0.34109
    • 10000 $0.34109
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    2SA2097(TE16L1,NQ) Cut Tape 1,877 1
    • 1 $1.17
    • 10 $0.735
    • 100 $1.17
    • 1000 $0.34109
    • 10000 $0.34109
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    2SA2097(TE16L1,NQ) Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.26022
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    Avnet Americas 2SA2097(TE16L1,NQ) Reel 18 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29394
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    Mouser Electronics 2SA2097(TE16L1,NQ) 1,962
    • 1 $0.88
    • 10 $0.693
    • 100 $0.469
    • 1000 $0.332
    • 10000 $0.258
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    Verical 2SA2097(TE16L1,NQ) 1,010 24
    • 1 -
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    • 100 $0.5563
    • 1000 $0.3913
    • 10000 $0.3913
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    Avnet Asia 2SA2097(TE16L1,NQ) 24 Weeks 2,000
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    Chip1Stop 2SA2097(TE16L1,NQ) 4,250
    • 1 -
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    • 100 $0.986
    • 1000 $0.789
    • 10000 $0.769
    		Buy Now
    2SA2097(TE16L1,NQ) Cut Tape 1,010
    • 1 -
    • 10 $1.07
    • 100 $0.445
    • 1000 $0.313
    • 10000 $0.313
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    Toshiba America Electronic Components 2SA2097 (TE16L1,NQ)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA2097 (TE16L1,NQ) 465
    • 1 $3.582
    • 10 $3.582
    • 100 $3.582
    • 1000 $1.9701
    • 10000 $1.9701
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    2SA2097 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2097 Toshiba Transistor Original PDF
    2SA2097 Toshiba PNP transistor Original PDF
    2SA2097(TE16L1,NQ) Toshiba 2SA2097 - TRANSISTOR PNP 50V 5A SC-62 Original PDF

    2SA2097 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A2097

    Abstract: 2SA2097 A2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097 2SA2097 A2097

    A2097

    Abstract: 2SA2097
    Text: 2SA2097 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.27 V (最大)


    Original     		PDF 2SA2097 20070701-JA A2097 2SA2097

    2sa2097

    Abstract: transistor A2097 A2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 2sa2097 transistor A2097 A2097

    transistor A2097

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097

    2SA2097

    Abstract: transistor pnp a110
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 2SA2097 transistor pnp a110

    transistor A2097

    Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 SC-64 transistor A2097 A2097 2SA2097 2SA20 transistor 2SA2097

    transistor A2097

    Abstract: A2097 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097 A2097 2SA2097

    Untitled

    Abstract: No abstract text available
    Text: 2SA2097 東芝トランジスタ シリコン PNP エピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm : h FE = 200~500 I C = −0.5 A • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: V CE (sat) = −0.27 V (最大)


    Original     		PDF 2SA2097

    A2097

    Abstract: transistor A2097 2SA2097
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 SC-64 A2097 transistor A2097 2SA2097

    transistor A2097

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 SC-64 transistor A2097

    Untitled

    Abstract: No abstract text available
    Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    TB6815FTG

    Abstract: out8 tb6815f
    Text: TB6815FTG 東芝BiCD集積回路 シリコン モノリシック TB6815FTG 6bit 入力 12bit 出力レベルシフタアレイ基準電圧用バッファ混載 IC 特 長 ・6bit 入力 12bit 出力のレベルシフタと 2ch の基準電圧 用バッファを混載しています。


    Original     		PDF TB6815FTG 12bit TB6815FTG Sn-37Pb OUT10 OUT11 OUT12 out8 tb6815f

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    SSOP30

    Abstract: BMP89A400010A-G TCA62746AFG/AFNG
    Text: EYE 6 June 2007 東芝半導体情報誌アイ 2007年6月号 VOLUME 178 CONTENTS 新製品情報 広出力電圧範囲ロジックレベルシフタアレイ .2 FLASHマイコン用 名刺サイズの小型オンチップデバッグエミュレータ.3


    Original     		PDF TB6815FNG SSOP30-P-300-0 OUT10 OUT11 OUT12 6bit12bit 0mmSSOP24 TB62746AFG) SSOP24 SSOP30 BMP89A400010A-G TCA62746AFG/AFNG

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


    Original     		PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram