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    TRANSISTOR A114 ESD Search Results

    TRANSISTOR A114 ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A114 ESD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    39SF512

    Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
    Text: SST Product Reliability SST Product Reliability INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with the


    Original     		PDF ISO-9001 S72023-00-000 SF3-33A 39VF040/39VF020/39VF010/39VF512 39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K JESD22 OT-23

    transistor A114

    Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101

    transistor a114 esd

    Abstract: TRANSISTOR A114 A114 transistor 2n7002k
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K 2N7002K JESD22 OT-23 transistor a114 esd TRANSISTOR A114 A114 transistor

    transistor A114

    Abstract: 2n7002k transistor a114 esd
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002K 2N7002K JESD22 OT-23 transistor A114 transistor a114 esd

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99

    transistor 4242 dm

    Abstract: MBRM130L NCP1800 NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator
    Text: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the


    Original     		PDF NCP1800 NCP1800 NCP1800/D transistor 4242 dm MBRM130L NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator

    Untitled

    Abstract: No abstract text available
    Text: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the


    Original     		PDF NCP1800 NCP1800 NCP1800/D

    transistor A114

    Abstract: A114 A115 FPD1000V JESD22 A114 transistor
    Text: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT


    Original     		PDF FPD1000V FPD1000V transistor A114 A114 A115 JESD22 A114 transistor

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS

    A114

    Abstract: A115 FPD4000V JESD22
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V


    Original     		PDF FPD4000V FPD4000V A114 A115 JESD22

    A114

    Abstract: A115 FPD2000V JESD22 Au Sn eutectic
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		PDF FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic

    transistor A114

    Abstract: transistor a114 diagram A114 transistor transistor a115
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		PDF FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115

    transistor a114 diagram

    Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
    Text: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT


    Original     		PDF FPD1000V FPD1000V transistor a114 diagram A114 A115 JESD22 transistor A114 transistor a115

    18w transistor

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor

    CRCW0805100F100

    Abstract: Ghz dB transistor
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 CRCW0805100F100 Ghz dB transistor

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25

    transistor A114

    Abstract: a114 transistor transistor a114 esd 2N7002KW
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd

    T2G405528-FSEVB2

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2

    UM3750

    Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic
    Text: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)


    Original     		PDF FPD10000V FPD10000V UM3750 A114 A115 JESD22 wedge Filtronic

    transistor A114

    Abstract: NCP3065 application NCP3065 A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065
    Text: NCP3065, NCV3065 Up to 1.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is


    Original     		PDF NCP3065, NCV3065 NCP3065 transistor A114 NCP3065 application A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW JESD22 OT-323

    Untitled

    Abstract: No abstract text available
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 TQGaN25

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original     		PDF FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS