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    TRANSISTOR A 92 Search Results

    TRANSISTOR A 92 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SC LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SB T0-92

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    Untitled

    Abstract: No abstract text available
    Text: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SC Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SC T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SA LS3550SA T0-92

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA114YE 416/SC 6aa marking

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114TE DTC114TE 416/SC transistor sc59 marking

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6

    Untitled

    Abstract: No abstract text available
    Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3250SA T0-92

    AC1501

    Abstract: No abstract text available
    Text: A42Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 A E E1 • This transistor is also available in the TO-92 case with the


    Original     		PDF OT-89 MPSA42. OT-89 01-Jun-2002 AC1501

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector


    Original     		PDF 2N5172 29-Dec-2010 2N5172

    MPSA13

    Abstract: PT 10000
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 QW-R201-016 PT 10000

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


    Original     		PDF BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit

    HE8551L

    Abstract: high gain low voltage PNP transistor TO-92 HE8051 HE8551
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8551 HE8551 O-92NL HE8051 HE8551L HE8551G HE8551-x-T92-B HE8551-x-T92-K HE8551-x-T9N-B HE8551-x-T9N-K HE8551L high gain low voltage PNP transistor TO-92 HE8051

    2N4400

    Abstract: No abstract text available
    Text: 2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transistor TO-92 G  Emitter  Base  Collector H J A D


    Original     		PDF 2N4400 150mA 500mA 150mA, 500mA, 100MHz 29-Dec-2010 2N4400

    2N4402

    Abstract: No abstract text available
    Text: 2N4402 -0.6 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H  Emitter  Base  Collector J A


    Original     		PDF 2N4402 -500mA -150mA, -15mA -500mA, -50mA 2N4402

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original     		PDF SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89

    2N3828

    Abstract: No abstract text available
    Text: 2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor  TO-92 G H  Emitter  Base  Collector J A D


    Original     		PDF 2N3828 100MHz 29-Dec-2010 2N3828

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    bf507

    Abstract: GC 607 TRANSISTOR Q62702-F571
    Text: bsc D Hi a a a s b o s oqo4S13 a ISIE6 T - 3 I- V BF 507 NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF °4513 O' BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package {10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF


    OCR Scan     		PDF oqo4S13 T-31-1/ Q62702-F571 bf507 GC 607 TRANSISTOR Q62702-F571

    TRANSISTOR BF495

    Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
    Text: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor


    OCR Scan     		PDF BF495 DD15313 7Z07390 31-iy D01S31S 7Z62763 7Z08226 TRANSISTOR BF495 BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310

    BF495

    Abstract: BF495 transistor
    Text: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor


    OCR Scan     		PDF BF495 001H3QS emi2312 53T31 DD13313 bbS3T31 7Z62763 7Z08226 BF495 BF495 transistor