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    TRANSISTOR A 42 Search Results

    TRANSISTOR A 42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    Untitled

    Abstract: No abstract text available
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D

    419B-02

    Abstract: NSM11156DW6T1G marking .544 sot363
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA114YE 416/SC 6aa marking

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114TE DTC114TE 416/SC transistor sc59 marking

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6

    419B-02

    Abstract: NSM21356DW6T1G SC marking code NPN transistor
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor

    419B-02

    Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21

    Untitled

    Abstract: No abstract text available
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D

    Untitled

    Abstract: No abstract text available
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D

    NSB1706DMW5T1G

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G NSB1706DMW5T1G, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1G

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D

    marking 88A

    Abstract: marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking 88A marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    NTE198

    Abstract: No abstract text available
    Text: NTE198 Silicon NPN Transistor High Voltage Power Transistor Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode


    Original     		PDF NTE198 NTE198

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23

    300V switching transistor

    Abstract: Vbe 40 transistor QCA300BA60
    Text: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 200ns) 400mA 300V switching transistor Vbe 40 transistor

    QCA300BA60

    Abstract: 675g M6 transistor
    Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor

    2n4261

    Abstract: 2N426 M1515
    Text: 2N 4261 Transistor by SEMICOA Semiconductors http://semicoa.com/transist/2n426 i .htm a semicoR SEMICONDUCTORS 2N4261 Transistor Case: TO-72 Qual Level: JAN - JANS Chip Geometry: 0014 Polarity: PNP The 2N4261 is a fast-switching, small signal silicon transistor.


    OCR Scan     		PDF com/transist/2n426 2N4261 MIL-PRF-19500/51 com/transist/2n4261 2N426 M1515