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    TRANSISTOR A 2731 Search Results

    TRANSISTOR A 2731 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 2731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


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    PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF


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    PDF 2731GN-110M 2731GN 55-QP 2731GN

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


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    PDF 2731GN-200M 2731GN 55-QP 55-QP 2731GN

    Untitled

    Abstract: No abstract text available
    Text: 2731-20R1 2731-20 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KCR-1 Common Base The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width,


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    PDF 2731-20R1 20Watts, 100us, 55KCR-1 2731-20is 20Watts

    TRANSISTOR JC 515

    Abstract: No abstract text available
    Text: 2731-115MR1 2731-115M 115 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz Preliminary Data GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-115M is an internally matched, COMMON BASE bipolar transistor capable of providing 115 Watts of pulsed RF output power at 200µs pulse


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    PDF 2731-115MR1 2731-115M 55KS-1 2731-115M TRANSISTOR JC 515

    2731-100M

    Abstract: 100 watts transistor s-band transistor frequency 30GHz gain 20 dB
    Text: 2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse


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    PDF 2731-100MR3 2731-100M 55KS-1 2731-100M 000pF 100pF 2200uF 25Mil, 100 watts transistor s-band transistor frequency 30GHz gain 20 dB

    j378

    Abstract: duroid 6010 breakdown voltage 2731-100M 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB
    Text: 2731-100MR1 2731-100M 100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz CASE OUTLINE 55KS-1 Common Base GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse


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    PDF 2731-100MR1 2731-100M 55KS-1 2731-100M 2200uF j378 duroid 6010 breakdown voltage 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB

    2701 optocoupler

    Abstract: optocoupler 2701 darlington optocoupler cross reference OPTO 2701
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, AN-3002: AN-3002 E90700, 2701 optocoupler optocoupler 2701 darlington optocoupler cross reference OPTO 2701

    74Sxx

    Abstract: optocoupler 2701 2701 optocoupler darlington optocoupler cross reference HCPL2701 9427 hcpl2711 HCPL 2701 6N139 2731
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, HCPL2731SDV E90700, 74Sxx optocoupler 2701 2701 optocoupler darlington optocoupler cross reference HCPL2701 9427 hcpl2711 HCPL 2701 6N139 2731

    hcpl-2701

    Abstract: darlington optocoupler cross reference transistor 2731 6N139
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, HCPL2731SDV HCPL2731SV HCPL-2731 HCPL2731V hcpl-2701 darlington optocoupler cross reference transistor 2731 6N139

    HCPL-2701

    Abstract: HCPL2701 AN-3002 2701 optocoupler TTL 74LSxx hcpl2711 74LSxx darlington optocoupler cross reference optocoupler 2701 6N139 "cross-reference"
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, 6N139WV 6N139 6N139SDV 6N139SV HCPL-2701 HCPL2701 AN-3002 2701 optocoupler TTL 74LSxx hcpl2711 74LSxx darlington optocoupler cross reference optocoupler 2701 6N139 "cross-reference"

    schematic diagram inverter air conditioner

    Abstract: schematic diagram motor control schematic diagram dc-ac inverter 3 phase inverter schematic diagram 3 phase ac sinewave motor controller single ic basic ac motor reverse forward electrical diagram control of three phase induction motor pwm variable frequency drive circuit diagram schematic diagram dc-ac inverter three phase schematic diagram brushless motor control
    Text: Inverter Motor Control Using the 8xC196MC Microcontroller Design Guide Application Note May 1998 Order Number: 273175 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    PDF 8xC196MC schematic diagram inverter air conditioner schematic diagram motor control schematic diagram dc-ac inverter 3 phase inverter schematic diagram 3 phase ac sinewave motor controller single ic basic ac motor reverse forward electrical diagram control of three phase induction motor pwm variable frequency drive circuit diagram schematic diagram dc-ac inverter three phase schematic diagram brushless motor control

    schematic diagram inverter air conditioner

    Abstract: schematic diagram dc-ac inverter schematic diagram for inverter air conditioner 80C196MC PHOTOCOUPLER P112 CD40938 cd40138 schematic diagram inverter control motor control inverter schematic diagram CD4584B
    Text: Inverter Motor Control Using the 8xC196MC Microcontroller Design Guide Application Note August 2000 Order Number: 273175-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    PDF 8xC196MC schematic diagram inverter air conditioner schematic diagram dc-ac inverter schematic diagram for inverter air conditioner 80C196MC PHOTOCOUPLER P112 CD40938 cd40138 schematic diagram inverter control motor control inverter schematic diagram CD4584B

    74LSxx

    Abstract: rs 2731 74lxx 74hxx 6N139 6N138 application 6N138 HCPL-2730 HCPL-2731
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 HCPL-2730 HCPL-2731 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, 00023A 74LSxx rs 2731 74lxx 74hxx 6N139 6N138 application 6N138 HCPL-2730 HCPL-2731

    74hxx

    Abstract: 74LSxx 6N139 HCPL-2730 74lxx cmos inv 6N138 HCPL-2731 6n139 0115 Quality Technologies optocouplers
    Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.


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    PDF 6N138 6N139 HCPL-2730 HCPL-2731 6N138/9 HCPL-2730/HCPL-2731 HCPL-2730/HCPL2731, DS300203 74hxx 74LSxx 6N139 HCPL-2730 74lxx cmos inv 6N138 HCPL-2731 6n139 0115 Quality Technologies optocouplers

    MUN2111T1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF MUN2111T1 SC-59 MUN2111T1 MUN2114T1 b3b7255 001350b

    UN2115T

    Abstract: transistor 6J U 2113t1 MUN2111T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias R esistor Transistor MUN2111T1 SER IES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M o to rola Preferred D e v ice s This new series of digital transistors is designed to replace a single device and its


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    PDF SC-59 MUN2111T1 MUN2114T1 UN2115T transistor 6J U 2113t1

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460

    MRF547

    Abstract: MRF549
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP S ilicon High Frequency T ransisto r 1C = -600m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . desig n ed fo r h ig h -cu rre n t, h ig h -fre q u e n cy c o m m o n base a m p lifie rs used in m e diu m


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    PDF MRF549 -600m MRF547 MRF547 MRF549

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 3 is d e s ig n e d fo r b ro a d b a n d c o m m e rc ia l and in d u s tria l a p p lic a tio n s at fre q u e n c ie s to 520 M H z. The high gain and bro a d b a n d


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    PDF MRF5003 AN215A,

    transistor a 2731

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES dual -| s p l it - d a r l in g t o n o p t o c o u p l e r s 1.6 mA DUAL HCPL-2730 0.5 mA DUAL HCPL-2731 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2730/31 dual channel optocouplers contain two completely separated 700nm GaAsP LED emitters. Each


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    PDF HCPL-2730 HCPL-2731 HCPL-2730/31 700nm transistor a 2731

    Untitled

    Abstract: No abstract text available
    Text: @9 DUAL SPLIT-DARLINGTON OPTOCOUPLERS OPTOELECTRONICS 1.6 mA DUAL HCPL-2730 0.5 mA DUAL HCPL-2731 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2730/31 dual channel optocouplers contain two completely separated 700nm GaAsP LED emitters. Each channel is optically coupled to high gain detector in a split Darlington


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    PDF HCPL-2730 HCPL-2731 HCPL-2730/31 700nm C1600 74bbflSl

    UPA102G

    Abstract: 8108T PC2768G 2757T PC2766 UPC2798GR
    Text: Configuration Drawings Frequency Downconverters U P C 2731G S ose UPC1685G U PC1686G U PC1687G U PC 2721G R U PC2722G R Coupling ose (Feedback) ose (Bypass) (Bypass) U PC2734G R U PC2753G R U P C 2743G S /44G S E E E _n= E E r E E E E E U PC2768G R U P C 2756T


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    PDF UPC2731GS UPC1685G UPC1686G UPC1687G UPC2721GR UPC2722GR PC2734G 2743G PC2753G PC2768G UPA102G 8108T 2757T PC2766 UPC2798GR

    ic 2731

    Abstract: C1957 transistor C1957 hcpl2731 equivalent optocoupler equivalent to 2730 2731
    Text: [ • DUAL SPLITDARLINGTON OPTOCOUPLERS 9 OPTOELECTRONICS 1 — 1.6 mA DUAL HCPL-2730 0.5 mA DUAL HCPL-2731 DESCRIPTION PACKAGE DIMENSIONS The HCPL-2730/31 dual channel optocouplers contain two completely separated 700nm GaAsP LED emitters. Each channel is oplically coupled to high gain detector in a split Darlington


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    PDF HCPL-2730 HCPL-2731 HCPL-2730/31 700nm C1957 C1953 C1600 ic 2731 C1957 transistor hcpl2731 equivalent optocoupler equivalent to 2730 2731