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    TRANSISTOR A 1263 Search Results

    TRANSISTOR A 1263 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1263 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0118 transistor

    Abstract: 14.5M 1982 P6.064 Package AA2E
    Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT 0.20 (0.008) M P6.064 C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL L CL CL E E1 α e1 D C CL A A2 A1 SEATING PLANE MIN MILLIMETERS MIN MAX NOTES


    Original     		PDF 5M-1982. SC-74 0118 transistor 14.5M 1982 P6.064 Package AA2E

    EDS-100935

    Abstract: SGA-1263
    Text: Preliminary SGA-1263 Product Description Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of


    Original     		PDF SGA-1263 SGA-1263 DC-4000 EDS-100935

    SGA-1263

    Abstract: Stanford Microdevices 4 ghz
    Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium


    Original     		PDF SGA-1263 SGA-1263 DC-4000 EDS-100935 Stanford Microdevices 4 ghz

    marking A12

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium


    Original     		PDF SGA-1263 SGA-1263 DC-4000 EDS-100935 marking A12

    MARKING HBT

    Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor

    SGA-1263

    Abstract: SGA-1263Z BY 356
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356

    trace code marking RFMD

    Abstract: SGA-1263 SGA-1263Z
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


    Original     		PDF

    HM62W16255HCJPI-12

    Abstract: HM62W16255HCTTI-12 HM62W16255CJPI12 HM62W16255CTTI12 HM62W16255HCJPI hm62w16255hci Hitachi DSA00181 Hitachi DSA0018154
    Text: HM62W16255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1263A (Z) Rev. 1.0 Nov. 1, 2001 Description The HM62W16255HCI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF HM62W16255HCI 256-kword 16-bit) ADE-203-1263A 16-bit. 400-mil 44-pin HM62W16255HCJPI-12 HM62W16255HCTTI-12 HM62W16255CJPI12 HM62W16255CTTI12 HM62W16255HCJPI Hitachi DSA00181 Hitachi DSA0018154

    Untitled

    Abstract: No abstract text available
    Text: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK7Y18-55B

    Untitled

    Abstract: No abstract text available
    Text: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK7Y18-55B

    MAX1658

    Abstract: MAX1658ESA MAX1659 MAX1659ESA
    Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically


    Original     		PDF 350mA, MAX1658/MAX1659 490mV 350mA MAX1659) MAX1658) MAX1658/MAX1659 MAX1658 MAX1658ESA MAX1659 MAX1659ESA

    MAX1658

    Abstract: MAX1658ESA MAX1659 MAX1659ESA
    Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically


    Original     		PDF 350mA, MAX1658/MAX1659 490mV 350mA MAX1659) MAX1658) MAX1658/MAX1659 MAX1658 MAX1658ESA MAX1659 MAX1659ESA

    max1658esa

    Abstract: 9-350MA
    Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically


    Original     		PDF 350mA, MAX1658/MAX1659 MAX1658) MAX1659) 650mV MAX1658 490mV MAX1659. max1658esa 9-350MA

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    transistor d 1264 a

    Abstract: transistor A 1264 transistor d 1264
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK98150-55 OT223 OT223. transistor d 1264 a transistor A 1264 transistor d 1264

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    equivalent transistor c 5888

    Abstract: C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393
    Text: IH bb53T31 DQ2531& 350 ^ l A P X Philips Sem iconductors • Product s p e c ific a tio n N AHER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N2


    OCR Scan     		PDF BFS520 OT323 MBC67 OT323. equivalent transistor c 5888 C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393

    equivalent transistor c 5888

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency


    OCR Scan     		PDF bbS3R31 BFS520 OT323 OT323 OT323. equivalent transistor c 5888

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF 003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173)

    SOT173

    Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
    Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF 0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520

    BFG520

    Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
    Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 711DfiEb RV-3-5-52/733 BFG520 SOT173 BFP520 BFR520 SOT-173

    Untitled

    Abstract: No abstract text available
    Text: >kl>JX I>kl 19-1263; Rev 0: 7/97 350mA, 16,5V Input, Low-Dropout Linear Regulators Genera/ Description The MAXI 658/MAX1659 feature a 1|JA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically


    OCR Scan     		PDF 350mA, 658/MAX1659 490mV 350mA MAX1659) MAX1658)