0118 transistor
Abstract: 14.5M 1982 P6.064 Package AA2E
Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT 0.20 (0.008) M P6.064 C 6 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL INCHES e b SYMBOL L CL CL E E1 α e1 D C CL A A2 A1 SEATING PLANE MIN MILLIMETERS MIN MAX NOTES
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5M-1982.
SC-74
0118 transistor
14.5M 1982
P6.064 Package
AA2E
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EDS-100935
Abstract: SGA-1263
Text: Preliminary SGA-1263 Product Description Sirenza Microdevices SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of
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SGA-1263
SGA-1263
DC-4000
EDS-100935
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SGA-1263
Abstract: Stanford Microdevices 4 ghz
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
Stanford Microdevices 4 ghz
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PDF
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marking A12
Abstract: No abstract text available
Text: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium
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SGA-1263
SGA-1263
DC-4000
EDS-100935
marking A12
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MARKING HBT
Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
MARKING HBT
SGA-1263Z
trace code marking RFMD
SGA1263
18 sot-363 rf power amplifier
InP HBT transistor
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SGA-1263
Abstract: SGA-1263Z BY 356
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263
SGA-1263Z
BY 356
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PDF
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trace code marking RFMD
Abstract: SGA-1263 SGA-1263Z
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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Original
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
DS090924
SGA-1263
trace code marking RFMD
SGA-1263Z
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.
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HM62W16255HCJPI-12
Abstract: HM62W16255HCTTI-12 HM62W16255CJPI12 HM62W16255CTTI12 HM62W16255HCJPI hm62w16255hci Hitachi DSA00181 Hitachi DSA0018154
Text: HM62W16255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1263A (Z) Rev. 1.0 Nov. 1, 2001 Description The HM62W16255HCI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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HM62W16255HCI
256-kword
16-bit)
ADE-203-1263A
16-bit.
400-mil
44-pin
HM62W16255HCJPI-12
HM62W16255HCTTI-12
HM62W16255CJPI12
HM62W16255CTTI12
HM62W16255HCJPI
Hitachi DSA00181
Hitachi DSA0018154
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Untitled
Abstract: No abstract text available
Text: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y18-55B
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Untitled
Abstract: No abstract text available
Text: BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y18-55B
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MAX1658
Abstract: MAX1658ESA MAX1659 MAX1659ESA
Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically
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350mA,
MAX1658/MAX1659
490mV
350mA
MAX1659)
MAX1658)
MAX1658/MAX1659
MAX1658
MAX1658ESA
MAX1659
MAX1659ESA
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MAX1658
Abstract: MAX1658ESA MAX1659 MAX1659ESA
Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically
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350mA,
MAX1658/MAX1659
490mV
350mA
MAX1659)
MAX1658)
MAX1658/MAX1659
MAX1658
MAX1658ESA
MAX1659
MAX1659ESA
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max1658esa
Abstract: 9-350MA
Text: 19-1263; Rev 0; 7/97 350mA, 16.5V Input, Low-Dropout Linear Regulators The MAX1658/MAX1659 feature a 1µA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically
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350mA,
MAX1658/MAX1659
MAX1658)
MAX1659)
650mV
MAX1658
490mV
MAX1659.
max1658esa
9-350MA
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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OCR Scan
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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transistor d 1264 a
Abstract: transistor A 1264 transistor d 1264
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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OCR Scan
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BUK98150-55
OT223
OT223.
transistor d 1264 a
transistor A 1264
transistor d 1264
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PDF
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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equivalent transistor c 5888
Abstract: C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393
Text: IH bb53T31 DQ2531& 350 ^ l A P X Philips Sem iconductors • Product s p e c ific a tio n N AHER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N2
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OCR Scan
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BFS520
OT323
MBC67
OT323.
equivalent transistor c 5888
C - 4834 transistor
tms 3615
transistor BF 697
Philips FA 291
LMT 4585
2857 M 730 transistor
LMT 393 N
43t SOT323
lmt 393
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PDF
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equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
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OCR Scan
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bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
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PDF
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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OCR Scan
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003221b
X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
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PDF
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SOT173
Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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0G32Slb
X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
X3A-BFR520
URV-3-5-52/733
SOT173
BFR520 transistor
BFG520
BFP520
BFR520
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PDF
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BFG520
Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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OCR Scan
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X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
X3A-BFR520
711DfiEb
RV-3-5-52/733
BFG520
SOT173
BFP520
BFR520
SOT-173
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PDF
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Untitled
Abstract: No abstract text available
Text: >kl>JX I>kl 19-1263; Rev 0: 7/97 350mA, 16,5V Input, Low-Dropout Linear Regulators Genera/ Description The MAXI 658/MAX1659 feature a 1|JA shutdown mode, reverse battery protection, short-circuit protection, and thermal shutdown. They are available in a special highpower 1.2W , 8-pin SO package designed specifically
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OCR Scan
|
350mA,
658/MAX1659
490mV
350mA
MAX1659)
MAX1658)
|
PDF
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