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    TRANSISTOR 965 Search Results

    TRANSISTOR 965 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 965 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JAPAN transistor

    Abstract: 96-529-BD11
    Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.


    Original     		PDF 2SA1036K 2SC411K 500mA 96-529-BD11) JAPAN transistor 96-529-BD11

    transistor

    Abstract: 2SC411K transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v
    Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.


    Original     		PDF 2SA1036K 2SC411K 500mA 96-529-BD11) curvesC411K transistor transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v

    nec 2401 831

    Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and


    Original     		PDF 2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor

    SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

    Abstract: JAPAN transistor 2SD1484K IMX17
    Text: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.


    Original     		PDF IMX17 2SD1484K 500mA 96-523-D15) SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE JAPAN transistor IMX17

    dual npn 500ma

    Abstract: 2SD1484K IMX17 NPN Silicon Epitaxial Planar Transistor Transistors General
    Text: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.


    Original     		PDF IMX17 2SD1484K 500mA 96-523-D15) dual npn 500ma IMX17 NPN Silicon Epitaxial Planar Transistor Transistors General

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


    Original     		PDF BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310

    transistor A 564

    Abstract: two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor
    Text: Transistors General purpose transistor dual transistors UMX1N / IMX1 FFeatures 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.


    Original     		PDF 2SC2412K 96-503-C22) transistor A 564 two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor

    marking DF

    Abstract: BF721T1
    Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage


    Original     		PDF BF721T1/D BF721T1 BF721T1/D* marking DF BF721T1

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


    Original     		PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector −Emitter Voltage VCEO −30


    Original     		PDF MMBT589LT1 OT-23 236AB)

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		PDF FMMT591Q J-STD-020 DS37010

    BSP16T1

    Abstract: SMD310 marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


    Original     		PDF BSP16T1/D BSP16T1 OT-223 BSP16T1/D* BSP16T1 SMD310 marking Bt2

    BSP16T1

    Abstract: SMD310 C200C marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


    Original     		PDF BSP16T1/D BSP16T1 OT-223 318E-Inc. BSP16T1 SMD310 C200C marking Bt2

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


    OCR Scan     		PDF 23SbOS

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568

    30n20

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance


    OCR Scan     		PDF T0220AB BUK7514-55 30n20

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES DESCRIPTION • S-mini package NPN transistor in a plastic SOT323 S-mini package. • High speed switching. APPLICATIONS It is intended for high speed switching applications.


    OCR Scan     		PDF PMST2369 OT323 OT323)

    MAR 544 MOSFET TRANSISTOR

    Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF 4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.


    OCR Scan     		PDF IMT17 2SA1036K -500m JMT17

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7514-55 T0220AB

    transistor sd 965

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard ievel FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7528-55 T0220AB transistor sd 965

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol


    OCR Scan     		PDF PZTA92T1/D PZTA92T1 OT-223 sot-223 body marking D K Q F