TRANSISTOR 945 P Search Results

TRANSISTOR 945 P Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 945 P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
telefunken IC 121 Abstract: No abstract text available Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure	Original	D-74025 telefunken IC 121	PDF
ir 035 Abstract: MCT2201 Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is	Original	MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035	PDF
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol	Original	SHD4193 SHD419203 2N3741	PDF
700B Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E Text: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF	Original	PD57018-E Hz/28 PowerSO-10RF PowerSO-10RF. 700B AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E	PDF
AN1294 Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description	Original	PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E	PDF
PD57006-E Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30 Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF	Original	PD57006-E PowerSO-10RF PowerSO-10RF. PD57006-E SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30	PDF
Untitled Abstract: No abstract text available Text: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package	Original	LET9070CB 2002/95/EC LET9070CB DocID023782	PDF
PD85035C Abstract: 945 TRANSISTOR M243 Text: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european	Original	PD85035C 2002/95/EC PD85035C ID14138 945 TRANSISTOR M243	PDF
Untitled Abstract: No abstract text available Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060F 2002/95/EC LET9060F	PDF
2L TRANSISTOR Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243 Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060C 2002/95/EC LET9060C 2L TRANSISTOR 945 TRANSISTOR transistor d 945 16824 transistor 945 M243	PDF
SO42 Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002	Original	PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier	PDF
Untitled Abstract: No abstract text available Text: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	S852TF OT-490 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature	Original	CD00002394 SD57030,	PDF

transistor C 945 Abstract: LET9060C 945 TRANSISTOR M243 transistor d 945 Text: LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN	Original	LET9060C LET9060C transistor C 945 945 TRANSISTOR M243 transistor d 945	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor	PDF
d5703 Abstract: SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 PD57030 transistor C 945 capacitor 0.1uf 500v Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE	Original	PD57030 PD57030S PD57030 PowerSO-10RF. d5703 SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 transistor C 945 capacitor 0.1uf 500v	PDF
PD57060s Abstract: 945 TRANSISTOR PD57060 Text: PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION	Original	PD57060S PD57060S PowerSO-10RF. 945 TRANSISTOR PD57060	PDF
945 TRANSISTOR Abstract: 700B M250 SD57030-01 Text: SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed DESCRIPTION The SD57030-01 is a common source N-Channel	Original	SD57030-01 SD57030-01 TSD57030-01 945 TRANSISTOR 700B M250	PDF
945 TRANSISTOR Abstract: 700B M243 SD57030 TSD57030 issi 546 Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION	Original	SD57030 SD57030 TSD57030 945 TRANSISTOR 700B M243 TSD57030 issi 546	PDF
AN1294 Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package	Original	PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E	PDF
945 TRANSISTOR Abstract: PD57045S Text: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE	Original	PD57045 PD57045S PowerSO-10RF. 945 TRANSISTOR PD57045S	PDF
Westinghouse diode Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82 Text: r 7294621 PQWEREX INC dT \| 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max	OCR Scan	T-33-35 KS8245A110 75T4b21 KS8245A110 Westinghouse diode KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82	PDF
lc 945 p transistor NPN TO 92 Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :	OCR Scan	IJ11III lc 945 p transistor NPN TO 92 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR	PDF

TRANSISTOR 945 P Search Results

TRANSISTOR 945 P Result Highlights (5)

TRANSISTOR 945 P Datasheets Context Search

MRF9030N

telefunken IC 121

ir 035

Untitled

700B

AN1294

PD57006-E

Untitled

PD85035C

Untitled

2L TRANSISTOR

SO42

Untitled

Untitled

transistor C 945

TRANSISTOR REPLACEMENT GUIDE

d5703

PD57060s

945 TRANSISTOR

945 TRANSISTOR

AN1294

945 TRANSISTOR

Westinghouse diode

lc 945 p transistor NPN TO 92