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    STMicroelectronics LET9060C

    RF MOSFET LDMOS 28V M243
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    LET9060C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LET9060C STMicroelectronics RF Power Transistor Original PDF
    LET9060C STMicroelectronics RF FETs, Discrete Semiconductor Products, MOSFET N-CH 80V 12A M-243 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


    Original     		PDF LET9060C 2002/95/EC LET9060C

    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060C 2002/95/EC LET9060C

    transistor C 945

    Abstract: LET9060C 945 TRANSISTOR M243 transistor d 945
    Text: LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN


    Original     		PDF LET9060C LET9060C transistor C 945 945 TRANSISTOR M243 transistor d 945

    2L TRANSISTOR

    Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060C 2002/95/EC LET9060C 2L TRANSISTOR 945 TRANSISTOR transistor d 945 16824 transistor 945 M243