TRANSISTOR 935 Search Results

TRANSISTOR 935 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 935 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the	OCR Scan	2SC4570 2SC4570 SC-70) 4570-T PACK878	PDF
NEC JAPAN 282 110 01 Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the	Original	2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261	PDF
9434 Abstract: transistor A 935 transistor 9350 transistor 24 Text: e PTB 20009 2.5 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for	Original	1-877-GOLDMOS 1301-PTB 9434 transistor A 935 transistor 9350 transistor 24	PDF
n503 Abstract: No abstract text available Text: ERICSSON ^ PTB 20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for	OCR Scan		PDF
transistor b 1166 Abstract: IC 935 947 transistor Text: ERICSSON ^ P TI R o n i7 l D ¿ U 1 f i Preliminary r 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Key Features Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960	OCR Scan	150mA transistor b 1166 IC 935 947 transistor	PDF
transistor A 935 Abstract: No abstract text available Text: e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for	Original	1-877-GOLDMOS 1301-PTB transistor A 935	PDF
transistor A 935 Abstract: t 935 NE50 Text: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for	OCR Scan		PDF
TIC55 Abstract: No abstract text available Text: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB	PDF
transistor A 935 Abstract: transistor 936 Text: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for	OCR Scan		PDF
ericsson rf Abstract: No abstract text available Text: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP	OCR Scan	conti50	PDF

transistor A 935 Abstract: No abstract text available Text: ERICSSON ^ PTB 20009 2.5 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Description Key Features The 20009 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935-960 MHz frequency band. It is rated at 2.5 Watts minimum output power and may be	OCR Scan	250mA transistor A 935	PDF
20183 Abstract: IC 935 Text: ERICSSON $ PTB 20183 30 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor P re lim ina ry Key Features Description The 20183 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 935 960 MHz frequency band. It Is rated at 30 Watts minimum	OCR Scan	150mA 20183 IC 935	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, com m on em itter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minim um output power, it may be used for both CW and PEP	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON S PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20008 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935-960 MHz frequency band. It is rated at 10 Watts minimum output power and may be	OCR Scan	100mA	PDF
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000	PDF
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698	PDF
BUS48AP Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10	PDF
BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100	PDF
MAR 544 MOSFET TRANSISTOR Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically	OCR Scan	4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor	PDF
PNP TRANSISTOR SC-70 Abstract: No abstract text available Text: MSB92WT1, MSB92AWT1 Preferred Device Product Preview PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323	Original	MSB92WT1, MSB92AWT1 SC-70/SOT-323 MSB92WT1 MBMu16 70/SOT MSB92AWT1: PNP TRANSISTOR SC-70	PDF

TRANSISTOR 935 Search Results

TRANSISTOR 935 Result Highlights (5)

TRANSISTOR 935 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

2sb504

Untitled

NEC JAPAN 282 110 01

9434

n503

transistor b 1166

transistor A 935

transistor A 935

TIC55

Untitled

transistor A 935

ericsson rf

Untitled

transistor A 935

20183

Untitled

Untitled

automotive ignition tip162

MJE15020

BUS48AP

BU108

MAR 544 MOSFET TRANSISTOR

PNP TRANSISTOR SC-70