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    TRANSISTOR 8505 Search Results

    TRANSISTOR 8505 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8505 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j02 527

    Abstract: S822T S822TRW S822TW marking 822
    Text: S822T/S822TW/S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 transistor j02 527 marking 822

    S852T

    Abstract: S852TW transistor d 945
    Text: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99 transistor d 945

    Untitled

    Abstract: No abstract text available
    Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99

    S852T

    Abstract: S852TW
    Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99

    h11e

    Abstract: transistor j02 527 S822T
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 h11e transistor j02 527

    Untitled

    Abstract: No abstract text available
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW 34nges D-74025 20-Jan-99

    marking WS2 sot

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • •


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 2002/95/EC 2002/96/EC OT-343R OT-143 marking WS2 sot

    TRANSISTOR w22

    Abstract: S822T S822TRW S822TW
    Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3


    Original     		PDF S822T S822TW S822TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R S822T OT-143 TRANSISTOR w22 S822TRW

    S822T

    Abstract: S822TRW S822TW TRANSISTOR w22
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 TRANSISTOR w22

    transistor j02 527

    Abstract: marking WS2 sot
    Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 2002/95/EC 2002/96/EC OT-343R OT-143 transistor j02 527 marking WS2 sot

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TRANSISTOR 85050

    Abstract: No abstract text available
    Text: S822T / S822TW / S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • 4 Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 OT-343R OT-143 OT-343 TRANSISTOR 85050

    Untitled

    Abstract: No abstract text available
    Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)


    Original     		PDF TPCP8505

    TPCP8505

    Abstract: BR 8505
    Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)


    Original     		PDF TPCP8505 12oducts TPCP8505 BR 8505

    toshiba ta 8505

    Abstract: No abstract text available
    Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)


    Original     		PDF TPCP8505 toshiba ta 8505

    Untitled

    Abstract: No abstract text available
    Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)


    Original     		PDF TPCP8505

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    8505N

    Abstract: No abstract text available
    Text: National t? S e m i c o n d u c t o r S eptem ber 1996 " A D VA N C E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using


    OCR Scan     		PDF 8505N

    lc 945 p transistor

    Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
    Text: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


    OCR Scan     		PDF S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184

    lc 945 p transistor

    Abstract: No abstract text available
    Text: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


    OCR Scan     		PDF S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: Na l i o n a l s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF 8505N

    Untitled

    Abstract: No abstract text available
    Text: National September 1996 Semiconductor” A D VA N C E IN FO R M A TIO N NDH8505N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using


    OCR Scan     		PDF NDH8505N 300ps, NDH8505N